Ion-Assisted Deposition of CaF2 Films on (111) Si

1992 ◽  
Vol 268 ◽  
Author(s):  
J.G. Cook ◽  
H. Moeller ◽  
S.R. Das ◽  
Li Zhongming
Keyword(s):  
Optical Properties ◽  
Emission Spectroscopy ◽  
Rf Discharge ◽  
Electrical And Optical Properties ◽  
Sputter Deposited ◽  
Deposited Films ◽  
Better Than

ABSTRACTCaF2 films have been deposited by evaporation onto H-passivated (111) Si in the presence of an rf discharge. The discharge is seen to promote epitaxy. Emission spectroscopy reveals strong CaF2 bands and a weak Ca line, indicating that deposition is largely molecular but that some breakup of the CaF2 molecules occurs in the discharge. Electrical and optical properties of these films were substantially better than those of sputter-deposited films.

scholarly journals SiCi_xNxthin films preparation by TEA-Co2 Laser induced Vapor-phase reaction and study of the nature of chemical bonds and some their electrical and optical properties

2004 ◽  
Vol 1 (2) ◽  
pp. 239-246
Author(s):  
Baghdad Science Journal
Keyword(s):  
Optical Properties ◽  
Localized States ◽  
Infrared Spectrometry ◽  
Phase Reaction ◽  
Chemical Bonds ◽  
Electrical And Optical Properties ◽  
Vapor Phase Reaction ◽  
Ft Ir ◽  
C And N ◽  
Deposited Films

A pulsed (TEA-0O2) laser was used to dissociate molecules of silane ethylene (C2I-14) and ammonia (NH3) gases, through collision assisted multiple photon dissociation (MPD) to deposit(SiC i_xNx) thin films, where the X-values are 0, 0.13 and 0.33, on glass substrate at T,----648 K. deposition rate of (0.416-0.833) nm/pulse and thickness of (500-1000)nm .Fourier transform infrared spectrometry (FT-IR) was used to study the nature of the chemical bonds that exist in the films. Results revealed that these films contain complex networks of the atomic (Si, C, and N), other a quantity of atomic hydrogen and chemical bonds such as (Si-N, C-N, C-14 and N-H).Absorbance and Transmittance spectra in the wavelength range (400-1100) nm were used to study the optical properties of the deposited films. It was found the optical nergy ap E0) of these films is indirect and increases with increasing (X) while the width of localized states decreases.The study of the electrical properties of the deposited films revealed that their electrical conductivity at any constant temperature decreases with increasing (X) and the films have two activation energies both increase with increasing (X).

scholarly journals Studying the effect of annealing on some electrical and optical properties for thin CdS , CdS:In films

2010 ◽  
Vol 7 (3) ◽  
pp. 1141-1145
Author(s):  
Baghdad Science Journal
Keyword(s):  
Optical Properties ◽  
Glass Substrate ◽  
Energy Gap ◽  
Displacement Method ◽  
Structural And Optical Properties ◽  
Electrical And Optical Properties ◽  
Deposited Films

In the present work we prepared heterojunction not homogenous CdS/:In/Cu2S) by spray and displacement methods on glass substrate , CdS:In films prepared by different impurities constration. Cu2S prepared by chemical displacement method to improve the junction properties , structural and optical properties of the deposited films was achieved . The study shows that the film polycrystalline by XRD result for all film and the energy gap was direct to 2.38 eV with no effect on this value by impurities at this constration .

Effects of Rapid Thermal Process on the Microstructural, Electrical and Optical Properties of AZO Thin Films

2013 ◽  
Vol 441 ◽  
pp. 11-14
Author(s):  
Rong Bin Liu ◽  
Kai Liang Zhang ◽  
Yu Jie Yuan ◽  
Fang Wang ◽  
Juan Xu
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Thermal Processing ◽  
Rf Magnetron Sputtering ◽  
Processing Temperature ◽  
Rapid Thermal Process ◽  
Electrical And Optical Properties ◽  
Pure Nitrogen ◽  
Glass Substrates ◽  
Deposited Films

In this paper, Al-doped ZnO thin films were deposited on glass substrates by RF magnetron sputtering and subsequently rapid thermal processing was executed under temperature range from 300°C to 600°C in order to investigate the microstructure, electrical, and optical properties of AZO films. XRD and AFM microscopy results showed that all the samples were of poly-crystalline and the grain size became larger with the increasing processing temperature. Compared with the sample as-deposited, it was shown that resistivity decreased from 1.9×10-2 to 1.48×10-3Ωcm and carrier concentration increased from 1.48×1020 to 5.59×1020 cm3 when the sample was processed at 600°C in pure nitrogen for 1 min. The highest transmittance of the samples processed at 500°C improves to 90.35% compared with the as-deposited films (68.2% ) as the wavelength varied between 400 and 900 nm.

The Relationship Between Emission Spectroscopy and Optical Properties of Amorphous Carbon Films

1987 ◽  
Vol 98 ◽  
Author(s):  
Richard M. Roth ◽  
Richard H. Jarman
Keyword(s):  
Optical Properties ◽  
Amorphous Carbon ◽  
Emission Spectroscopy ◽  
Carbon Films ◽  
Capacitively Coupled ◽  
Amorphous Carbon Films ◽  
Rf Glow Discharge ◽  
Discharge Parameters ◽  
The Relationship ◽  
Deposited Films

ABSTRACTEmission from CH and H radicals was monitored during the deposition of amorphous carbon films in a capacitively coupled rf glow discharge. Both the spectral and spatial distributions of the emission were studied. The relative intensity of the CH and H emission was found to be sensitive to changes in discharge parameters. Preliminary results indicate a correlation between the ratios of the CH to H emission intensities and the optical properties of the deposited films.

Electrical and optical properties of sputter deposited tin doped indium oxide thin films with silver additive

2001 ◽  
Vol 392 (2) ◽  
pp. 305-310 ◽  
Author(s):  
Annette Hultåker ◽  
Kenneth Järrendahl ◽  
Jun Lu ◽  
Claes-Göran Granqvist ◽  
Gunnar A. Niklasson
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Indium Oxide ◽  
Oxide Thin Films ◽  
Electrical And Optical Properties ◽  
Sputter Deposited

Thickness Dependence of Structural, Electrical and Optical Properties of Sputter Deposited Indium Tin Oxide Films

2010 ◽  
Vol 3 (4) ◽  
pp. 434-441 ◽  
Author(s):  
S. Sivaranjani ◽  
V. Malathy ◽  
J. Joseph Prince ◽  
B. Subramanian ◽  
T. Balasubramanian ◽  
...  
Keyword(s):  
Optical Properties ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Thickness Dependence ◽  
Electrical And Optical Properties ◽  
Sputter Deposited ◽  
Tin Oxide Films

Structural, electrical and optical properties of sputter-deposited Nb-doped TiO2 (TNO) polycrystalline films

2008 ◽  
Vol 516 (17) ◽  
pp. 5754-5757 ◽  
Author(s):  
Naoomi Yamada ◽  
Taro Hitosugi ◽  
Ngoc Lam Huong Hoang ◽  
Yutaka Furubayashi ◽  
Yasushi Hirose ◽  
...  
Keyword(s):  
Optical Properties ◽  
Polycrystalline Films ◽  
Electrical And Optical Properties ◽  
Doped Tio2 ◽  
Sputter Deposited
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