The Role of Ion Beam Assisted Surface Chemistry in Etching: Adsorption and Reactions of ALKYL Halides

1992 ◽  
Vol 268 ◽  
Author(s):  
Duncan Marshall ◽  
Richard B. Jackman
Keyword(s):  
Surface Chemistry ◽  
Ion Beam ◽  
Alkyl Halides ◽  
Ion Beam Etching ◽  
Spectroscopic Probes

ABSTRACTThe form of ideal surface chemistry that is necessary for chemically assisted ion beam etching (CAIBE), with particular reference to in-situ processing is considered. Whilst to date CAIBE has been almost exclusively carried out with chlorine, distinct advantages exist if a compound that which displays spontaneous reactivity which is limited to one or two monolayers can be used. The role of alkyl halides in this scenario has been investigated through the use of surface spectroscopic probes to investigate the microscopic chemical and ion beam assisted reactivity that may be achieved. Dichloroethane has been found to display promising behaviour.

Study of scalable IBS nanopatterning mechanisms for III-V semiconductors using in-situ surface characterization

2011 ◽  
Vol 1354 ◽  
Author(s):  
Jean Paul Allain ◽  
Osman El-Atwani ◽  
Alex Cimaroli ◽  
Daniel L. Rokusek ◽  
Sami Ortoleva ◽  
...  
Keyword(s):  
Surface Chemistry ◽  
Surface Characterization ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Low Energy ◽  
Self Organization ◽  
Beam Parameter ◽  
Ion Beam Sputtering

ABSTRACTIon-beam sputtering (IBS) has been studied as a means for scalable, mask-less nanopatterning of surfaces. Patterning at the nanoscale has been achieved for numerous types of materials including: semiconductors, metals and insulators. Although much work has been focused on tailoring nanopatterning by systematic ion-beam parameter manipulation, limited work has addressed elucidating on the underlying mechanisms for self-organization of multi-component surfaces. In particular there has been little attention to correlate the surface chemistry variation during ion irradiation with the evolution of surface morphology and nanoscale self-organization. Moreover the role of surface impurities on patterning is not well known and characterization during the time-scale of modification remains challenging. This work summarizes an in-situ approach to characterize the evolution of surface chemistry during irradiation and its correlation to surface nanopatterning for a variety of multi-components surfaces. The work highlights the importance and role of surface impurities in nanopatterning of a surface during low-energy ion irradiation. In particular, it shows the importance of irradiation-driven mechanisms in GaSb(100) nanopatterning by low-energy ions and how the study of these systems can be impacted by oxide formation.

Role of ion beam etching in the fabrication of ramp-type junctions

2001 ◽  
Vol 351 (3) ◽  
pp. 200-214 ◽  
Author(s):  
U. Schoop ◽  
M. Schonecke ◽  
S. Thienhaus ◽  
S. Schymon ◽  
L. Alff ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching

The role of ion-beam cleaning in the growth of strained-layer epitaxial thin transition metal films

1987 ◽  
Vol 2 (4) ◽  
pp. 446-455 ◽  
Author(s):  
Sung I. Park ◽  
A. Marshall ◽  
R. H. Hammond ◽  
T. H. Geballe ◽  
J. Talvacchio
Keyword(s):  
Tunnel Junctions ◽  
Ion Beam ◽  
Surface Damage ◽  
Metal Films ◽  
Strained Layer ◽  
Transmission Electron ◽  
Lattice Matched

Low-energy ion-beam cleaning of the substrates prior to a deposition greatly enhances the quality of ultrathin (< 100 Å) refractory superconducting (Nb, V) films. Using this technique Nb films as thin as 7 Å have been grown, from which good tunnel junctions have been fabricated. Both the native films and the tunnel junctions are sturdy and can be thermally recycled without any degradation. In-situ surface study along with transmission electron microscopy (TEM) results suggest the removal of the carbon atoms from the surface of the substrate without an apparent surface damage as the causes of the improvement. The TEM results indicate that the Nb films grow perfectly lattice matched to the sapphire substrate when the substrate is ion-beam cleaned. This strained-layer epitaxy is observed up to 40 Å, the maximum thickness investigated through TEM.

Ion Beam Etching of Biological Material in the Scanning Electron Microscope

1969 ◽  
Vol 27 ◽  
pp. 10-11
Author(s):  
Patrick Echlin ◽  
David Kynaston ◽  
Paul M. Knights
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Biological Material ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Dynamic Experiments ◽  
First Time ◽  
Scanning Electron

An ion source has been designed to operate in the chamber of the Stereoscan scanning electron microscope and provides facilities for etching specimens in situ. The source is a demountable cold cathode discharge type requiring only simple control.The ion beam described above has been used to progressively etch away hard or resilient biological material. This is the first time that ion beam etching of botanical specimens has been followed inside the scanning microscope, and marks the beginning of a range of dynamic experiments using this form of instrumentation.

Room Temperature Nitridation and Oxidation of Si, Ge and Mbegrown Sige Using Low Energy Ion Beams (0.1-1 Kev).

1991 ◽  
Vol 223 ◽  
Author(s):  
O. Vancauwenberghe ◽  
O. C. Hellman ◽  
N. Herbots ◽  
J. L. Olson ◽  
W. J. Tan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Film Properties ◽  
Dielectric Thin Films ◽  
Ion Energy ◽  
Insulating Films ◽  
Ion Energies ◽  
Energy Dependent

ABSTRACTDirect Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase formation and film properties. Si0.8Ge0.2 films were grown by MBE on Si (100) and transferred in UHV to the ion beam processing chamber. The modification of composition and chemical binding was measured as a function of ion beam exposure by in situ XPS analysis. The samples were nitridized or oxidized using until the N or O 1s signal reached saturation for ion doses between 5×1016 to 1×1017 ions/cm2. Combined characterization by XPS, SEM, ellipsometry and cross-section TEM showed that insulating films of stoichiometric SiO2 and Si-rich Si3N4 were formed during IBO and IBN of Si at all energies used. The formation of Ge dielectric thin films by IBO and IBN was found to be strongly energy dependent and insulating layers could be grown only at the lower energies (E ≤ 200 eV). In contrast to pure Ge, insulating SiGe-oxide and SiGe-nitride were successfully formed on Si0.8Ge0.20.2 at all energies studied.

FIB-Etching of Polymer/Metal Laminates and its Effect on Mechanical Performance

2014 ◽  
Vol 20 (6) ◽  
pp. 1826-1834
Author(s):  
Enne Faber ◽  
Willem P. Vellinga ◽  
Jeff T.M. De Hosson
Keyword(s):  
Mechanical Properties ◽  
Polyethylene Terephthalate ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Mechanical Performance ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
Polymer Metal ◽  
The Impact

AbstractThis paper investigates the adhesive interface in a polymer/metal (polyethylene terephthalate/steel) laminate that is subjected to uniaxial strain. Cross-sections perpendicular to such interfaces were created with a focused ion beam and imaged with scanning electron microscopy during straining in the electron microscope. During in situ straining, glide steps formed by the steel caused traction at the interface and initiated crazes in the polyethylene terephthalate (PET). These crazes readily propagated along the free surface of the PET layer. Similar crazing has not been previously encountered in laminates that were pre-strained or in numerical calculations. The impact of focused ion beam treatments on mechanical properties of the polymer/metal laminate system was therefore investigated. It was found that mechanical properties such as toughness of PET are dramatically influenced by focused ion beam etching. It was also found that this change in mechanical properties has a different effect on the pre-strained and in situ strained samples.

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