Studies of PQ-100(TM) Polyquinoline Film for Multichip Module(MCM) Applications

1992 ◽  
Vol 264 ◽  
Author(s):  
Kyung W. Paik ◽  
Herbert S. Cole ◽  
Neil H. Hendricks
Keyword(s):  
Surface Morphology ◽  
Chemical Bonding ◽  
Etch Rate ◽  
Peel Strength ◽  
Multichip Module ◽  
Good Adhesion ◽  
Compound Formation ◽  
Poor Adhesion ◽  
Rough Surface Morphology ◽  
Weak Chemical

AbstractOxygen and O2+CF4 RIE showed faster etch rate of PQ-100 film than nonoxygen containing RIE, and caused rough surface morphology. Ti shows good adhesion to the PQ-100 film because of Ti-O and possible Ti-N compound formation at the interface. No diffusion of Ti and Ti-containing precipitates were observed at the Ti/PQ interface even at temperatures of 250 °C. In contrast to the Ti/PQ interface, Cu showed very poor adhesion to the PQ film because of weak chemical bonding. Cu reaction compounds were not observed at the interface at the 250 °C annealing. Ti adhesion to the PQ-100 film was good for control, RIE modified, and water-boiled cases. Initial studies suggest a reduction in peel strength at 250 °C annealing, although this topic must be further addressed to understand the exact mechanism.

Effect of Presputtering on the Adhesion of Cu to Teflon

1987 ◽  
Vol 93 ◽  
Author(s):  
Chin-An Chang ◽  
K. C. Lin ◽  
J. E. E. Baglin ◽  
G. Coleman ◽  
J. Park
Keyword(s):  
Surface Morphology ◽  
Chemical Bonding ◽  
Peel Strength ◽  
Cu Films ◽  
Scotch Tape ◽  
Strong Adhesion

ABSTRACTAdhesion between Cu and Teflon has been greatly enhanced by a presputtering treatment of the Teflon prior to the deposition of Cu. Without such a treatment, the Cu-Teflon adhesion is weak, with a peel strength less than 1 gram/mm, and the Cu films can be easily peeled off using scotch tape. With the presputtering treatment, the adhesion rapidly increases, and reaches 50 grams/mm after 30 sec of sputtering. All the sputtered samples show strong adhesion, and the Cu films can only be scratched off forcefully using sharp tools. The presputtering treatment has changed the surface morphology of the Teflon and the deposited Cu layers, and also changes the chemical bonding between Cu and Teflon. The results are discussed to understand the mechanisms involved for the enhanced adhesion observed.

Wet Chemical Etching of Zn-containing oxides and HfO2 for the fabrication of Transparent TFTs

2009 ◽  
Vol 1201 ◽  
Author(s):  
Jae-Kwan Kim ◽  
Jun Young Kim ◽  
Seung-Cheol Han ◽  
Joon Seop Kwak ◽  
Ji-Myon Lee
Keyword(s):  
Sulfuric Acid ◽  
Surface Morphology ◽  
Chemical Etching ◽  
Etch Rate ◽  
Room Temperature ◽  
Wet Chemical ◽  
Wet Chemical Etching

AbstractThe etch rate and surface morphology of Zn-containing oxide and HfO2 films after wet chemical etching were investigated. ZnO could be easily etched using each acid tested in this study, specifically sulfuric, formic, oxalic, and HF acids. The etch rate of IGZO was strongly dependent on the etchant used, and the highest measured etch rate (500 nm/min) was achieved using buffered oxide etchant at room temperature. The etch rate of IGZO was drastically increased when sulfuric acid at concentration greater than 1.5 molar was used. Furthermore, etching of HfO2 films by BF acid proceeded through lateral widening and merging of the initial irregular pits.

Feature Size and Density Effects in Wet Selective Etching of GaAs/AlAs p-HEMT Structures with Organic Acid - Peroxide Solutions.

2003 ◽  
Vol 799 ◽  
Author(s):  
Vinay S. Kulkarni ◽  
Kanti Prasad ◽  
William Quinn ◽  
Frank Spooner ◽  
Changmo Sung
Keyword(s):  
Surface Morphology ◽  
Organic Acid ◽  
Etch Rate ◽  
Low Noise ◽  
Wet Etching ◽  
Low Noise Amplifiers ◽  
Etch Depth ◽  
Feature Size ◽  
Selective Etch ◽  
Etch Stop

ABSTRACTPseudomorphic HEMT (p-HEMT) devices are used in a number of wireless communication applications including power amplifiers in the 17–50 GHz range, low noise amplifiers and switches. Selective wet etching is often used to form the gate regions of these devices to avoid plasma damage associated with dry etching. We have investigated the wet etching of small (8μm to 0.5μm) features with organic acid - hydrogen peroxide solutions. Two acid solutions were used as a selective etchant for GaAs using AlAs etch stop layers in a p-HEMT structure grown by MBE. The etched features were characterized by AFM, SEM, and TEM techniques. The etch depth uniformity and reproducibility were found to depend on a number of factors including feature size, feature density, etching chemistry, agitation and surface tension. When features with a range of size and density were placed in close proximity in a layout we found that the etch rate of the different features was a function of density, size and most importantly the etch chemistry. One etchant solution exhibited a 12% difference in etch rate from the smallest feature to the largest, while another solution exhibited uniform etching of all features regardless of size or density. Both solutions produced specular etched surfaces in GaAs and AlGaAs. However, the AlAs etch stop showed a non-uniform surface morphology after etching. The surface morphology of the AlAs etch stop is one factor that limits the over etch which can be designed into the process. The most important factors to be considered in designing a selective etch process will be presented.

Wetting Behaviors of Sn-Based Solders on Cu and Pd Surfaces

1995 ◽  
Vol 390 ◽  
Author(s):  
H. K. Kim ◽  
Y. Wang ◽  
A. Maheshwari ◽  
K. N. Tu
Keyword(s):  
Surface Morphology ◽  
Classical Model ◽  
Layered Compound ◽  
Quasi Equilibrium ◽  
Compound Formation ◽  
Snpb Solder ◽  
Wetting Behaviors ◽  
Pure Sn ◽  
Compound Surface ◽  
Eutectic Snpb

ABSTRACTWe have studied the surface morphology and wetting reaction of eutectic SnBi, eutectic SnPb, and pure Sn on Cu and Pd surfaces. In the case of Pd, the reactions were so fast that no quasi-equilibrium wetting angle could be measured. The compound formation has changed not only the interfaces but also the surfaces. Due to the formation of a reaction band outside the solder cap, the SnPb solder is no longer wetting the Cu surface but rather the Cu-Sn compound surface. In the wetting interface between eutectic SnPb and Cu, the morphology of the scallop-like Cu-Sn compound grains shows that we may not apply the classical model of layered compound growth to analyze the rate of soldering reactions.

The adhesion of evaporated metal films on glass

1961 ◽  
Vol 261 (1307) ◽  
pp. 516-531 ◽  
Keyword(s):  
Oxide Layer ◽  
Metal Films ◽  
Film Structure ◽  
Good Adhesion ◽  
Microscope Examination ◽  
Initial Adhesion ◽  
Residual Atmosphere ◽  
Glass Interface ◽  
Intermediate Oxide ◽  
Poor Adhesion

The adhesion of films of a large number of metals deposited by vacuum techniques on to a glass surface have been examined. It has been found that the affinity of the metal for oxygen plays an important role in determining the adhesion and the results appear to confirm the theory that the formation of an intermediate oxide layer at the metal/glass interface is necessary for good adhesion. There has been some doubt as to how this intermediate oxide layer is formed and the present investigation has shown that the nature and pressure of the residual atmosphere during deposition determines the extent of the formation of the oxide layer during deposition and therefore the initial adhesion of the films. However, variations in adhesion with time have been observed with films of a number of metals and it would appear that if the formation of the oxide layer is not complete during deposition then diffusion of gas to the metal/glass interface can continue the formation of the oxide layer after deposition thus accounting for the variation in adhesion with time. Since the film structure would determine the rate and extent of the diffusion of gas to the interface, it can be an important factor affecting the adhesion. Electron-microscope examination of a number of the films has been made and confirms the importance of the film structure. Furthermore, certain anomalies such as the poor adhesion of films of the low melting point metals and aluminium can be explained on the basis of film structure.

scholarly journals Damage-Free Photo-Assisted Cryogenic Etching of GaN as Evidenced by Reduction of Yellow Luminescence

1999 ◽  
Vol 4 (S1) ◽  
pp. 914-919 ◽  
Author(s):  
J. T. Hsieh ◽  
J. M. Hwang ◽  
H. L. Hwang ◽  
W. H. Hung
Keyword(s):  
Surface Morphology ◽  
Root Mean Square ◽  
Low Temperatures ◽  
Etch Rate ◽  
Root Mean Square Roughness ◽  
Mean Square ◽  
Photoluminescence Spectra ◽  
Yellow Luminescence ◽  
Etching Technique ◽  
193 Nm

Damage-free etching of GaN by Cl2, assisted by an ArF (193 nm) excimer laser, is demonstrated. At low temperatures, photo-assisted etching can provide a better etch rate and largely improve the surface morphology and quality. AFM results show that the etched GaN surface is obtained with a root-mean-square roughness of 1.7 nm. As compared with the photoluminescence spectra of photoelectrochemical wet etched GaN, the photo-assisted cryogenic etching is proved to be a damage-free dry etching technique.

scholarly journals Исследование вольт-амперных характеристик новых гетероструктур MnO-=SUB=-2-=/SUB=-/GaAs(100) и V-=SUB=-2-=/SUB=-O-=SUB=-5-=/SUB=-/GaAs(100), прошедших термическую обработку

2019 ◽  
Vol 53 (8) ◽  
pp. 1074
Author(s):  
Б.В. Сладкопевцев ◽  
Г.И. Котов ◽  
И.Н. Арсентьев ◽  
И.С. Шашкин ◽  
И.Я. Миттова ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Thermal Oxidation ◽  
Current Density ◽  
Chemical Bonding ◽  
Room Temperature ◽  
Reverse Bias ◽  
Electrical Parameters ◽  
Internal Interface ◽  
Current Voltage ◽  
Bias Range

AbstractComplex oxide films with a thickness of about 200 nm are formed during the thermal oxidation of GaAs with magnetron-deposited V_2O_5 and MnO_2 nanolayers. The electrical parameters of the films (reverse-bias breakdown voltage and current density) are determined by the method of current–voltage ( I – V ) characteristics at room temperature in the bias range from –5 to +5 V, and their composition and surface morphology are investigated. It is shown that V_2O_5 facilitates the more intense (in comparison with MnO_2) chemical bonding of arsenic at the internal interface with the formation of As_2O_5. As a result, thermally oxidized V_2O_5/GaAs heterostructures exhibit higher breakdown voltages.

scholarly journals Metallization of High Purity Al2O3 Substrate with Autocatalytic NiP Thin Films for Au Interconnections in MCM packaging technology.

2020 ◽  
Vol 15 (2) ◽  
pp. 1-4
Author(s):  
Melissa Mederos Vidal ◽  
Alexander Flacker ◽  
Ricardo Cotrin Teixeira
Keyword(s):  
Thin Films ◽  
High Purity ◽  
Thickness Distribution ◽  
Multichip Module ◽  
Good Adhesion ◽  
Al2o3 Substrate ◽  
Packaging Technology ◽  
Au Film ◽  
Au Thin Films

A Multichip Module (MCM) is a structure consisting of several ICs (typically bare chips) interconnected on a common supporting substrate and packaged as a single device. In this packaging technology, gold (Au) thin films are used as interconnection tracks terminated by wire bonding process to the chips. Thus, the good quality of theses Au films (for interconnects purpose) is essential. The present work proposes a metallization sequence of high purity (99.9%) and polished Al2O3 substrates, with an autocatalytic (electroless) NiP thin film follow by an electrolytic Au film in order to improve the MCM interconnections quality. The results show NiP and Au films with good adhesion, low roughness, good thickness distribution and optimal electrical properties, which allows us to establish a methodology that guarantees the reproducibility and quality of the Au interconnections in MCM devices.

Sign in / Sign up

Export Citation Format

Share Document