Allotaxy: A New Method for Epitaxial Growth of Compound Thin Films

1992 ◽  
Vol 263 ◽  
Author(s):  
S. Mantl ◽  
H. L. Bay ◽  
Ch. Dieker
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Depth Profile ◽  
New Method ◽  
Si Substrate ◽  
Step Process ◽  
High Temperature Anneal ◽  
Processing Step ◽  
Deposition Conditions

ABSTRACTA new method for the growth of epitaxial compound thin films, termed allotaxy, is proposed and the fabrication of the silicide heterostructure Si/CoSi2/Si(100) Is demonstrated. Allotaxy is a two. step process. In our example, Si is deposited on a heated Si substrate and then Co is coevaporated at varying rates such that a peaked Co-depth profile in Si is generated. At appropriate deposition conditions CoSi2 precipitates embedded in single crystalline Si are formed. These precipitates coarsen and coalesce into a buried, uniform, epitaxial CoSi2 layer during the second processing step, a high temperature anneal. Allotaxy should allow not only the epitaxial growth of silicides but also that of other binary, precipitates forming systems.

The Role of Implant Temperature in the Formation of Thin Buried Oxide Layers

1986 ◽  
Vol 74 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
L. N. Pfeiffer ◽  
K. W. West ◽  
J. L. Batstone
Keyword(s):  
High Temperature ◽  
Crystalline Material ◽  
High Dose ◽  
Si Substrate ◽  
High Temperature Anneal ◽  
Damage Structure ◽  
Amorphous Si ◽  
Substrate Temperatures

AbstractFrom the early work on high dose oxygen implantation for buried SiO2 formation, it is apparent that the temperature of the Si substrate during the implant has a strong influence on the quality of both the SiO2 layer and the overlying Si. This, in turn, can be related to the damage from the oxygen implant. For substrate temperatures < ∼ 300°C, amorphous Si is created during the implant and leads to the formation of twins or polycrystalline Si during the subsequent high temperature (>1300°C) anneal. At higher substrate temperatures (<∼400°C), dynamic annealing eliminates the amorphous Si, but the implanted oxygen appears to segregate during the implant leading to oxygen-rich amorphous regions imbedded in regions of crystalline material. As the amorphous regions start to coalesce and form SiO2 during the high temperature anneal, they trap crystalline Si which cannot escape by diffusion. This process can be circumvented by using a randomizing Si implant to change the damage structure from the oxygen implant before annealing. We have seen these effects clearly in sub-stoichiometric implants, and believe they are also operative during stoichiometric implants.

Strain Accommodation and Relaxation Mechanisms in Epitaxially Grown Manganites

2001 ◽  
Vol 696 ◽  
Author(s):  
Marie-José Casanove ◽  
Pierre Baulès ◽  
Christian Roucau ◽  
David Magnoux ◽  
Jean-François Bobo ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Slow Growth ◽  
The State ◽  
Misfit Dislocations ◽  
Orthorhombic Distortion ◽  
Strained Layers ◽  
Slow Growth Rate ◽  
Deposition Conditions

AbstractEpitaxial growth of La1-x(SrorCa)xMnO3 manganites (LSMO or LCMO) has been successfully achieved on SrTiO3 (001) and MgO(001) substrates. We report the influence of the deposition conditions, in particular growth rate, annealing and nature of the substrate, on the state of strain in the manganite layers. Fully strained layers are reported at very slow growth rate on SrTiO3 substrates while misfit dislocations are clearly observed in layers grown on MgO and alsoin layers grown on SrTiO3, after annealing at high temperature. Besides, evidence is given for a rhombohedral (respectively orthorhombic) distortion relaxation in LSMO (respectively LCMO) layers. The microstructure of the manganite layers is analyzed taking into account their non-isomorphic growth on the cubic substrates.

The Template Technique Applied to Epitaxial Growth of CrSi2 on Silicon (111)

1993 ◽  
Vol 317 ◽  
Author(s):  
John E. Manan ◽  
Robert G. Long ◽  
André Vantomme ◽  
Marc-A. Nicolet
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Film Formation ◽  
The Other ◽  
High Temperature Annealing ◽  
Growth Technique ◽  
Reactive Deposition ◽  
Chromium Evaporation

ABSTRACTThe template growth technique was applied to the growth of CrSi2 thin films on Si(111) by UHV E-gun evaporation. A 4He+ channeling yield of -50% was obtained for an epitaxial -2100 Å-thick film of continuous morphology grown at 450° C The heteroepitaxial relationship is CrSi2 (001) / Si (lll) with CrSi2[210] ∥ Si<110>.In the case of film formation simply via reactive deposition epitaxy (RDE, chromium evaporation onto hot substrates) a severe crystallinity-Morphology tradeoff is always observed. Continuous films are formed at low temperature but no long-range epitaxy is found. On the other hand, high temperature annealing of these films induces the formation of islands that show good epitaxial alignment with the substrate. This tradeoff was addressed with the template growth technique.

Effects of Two-Step Annealing on the Epitaxialgrowth of CoSi2 on Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
L. J. Chen ◽  
T. T. Chang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Epitaxial Growth ◽  
High Temperature Annealing ◽  
Transmission Electron ◽  
Cobalt Thin Films

The formation of epitaxial CoSi2 on silicon by both conventional and two-step annealing of cobalt thin films on silicon was studied by transmission electron microscopy.For two-step annealing, samples were first annealed at 350°C for 1 h, followed by high temperature annealing at 650–950°C for 1 h. The scheme was found to bevery effective in promoting the epitaxial growth of CoSi2 on silicon as well aseliminating faceted structures on Si(111). The results are discussed in terms of the driving away of impurities from the interfaces.

MBE Growth of GaAs on Si through Direct Ge Buffers

2005 ◽  
Vol 869 ◽  
Author(s):  
Xiaojun Yu ◽  
Yu-Hsuan Kuo ◽  
Junxian Fu ◽  
James S Harris
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Single Phase ◽  
Threading Dislocation ◽  
Si Substrate ◽  
Step Method ◽  
Mbe Growth ◽  
Gaas Substrates ◽  
High Temperature Anneal ◽  
Threading Dislocation Density

AbstractThe result of GaAs growth on Si using a thin Ge buffer layer (about 0.5μm thick) is presented in this paper. A two-step method with a high temperature anneal between two steps is used to grow the Ge buffer layer. Single phase GaAs is grown on Ge by controlling the growth temperature, substrate miscut and the prelayers. No APD defect is observed by the XTEM and the threading dislocation density of GaAs grown using this method is about 5˜10×107cm-2. The PL intensity of GaAs is 10× less on Si substrate than on GaAs substrates.

Low Temperature Epitaxial Growth of High Temperature Superconductors:Bi-Sr-Ca-Cu-O.

1991 ◽  
Vol 222 ◽  
Author(s):  
Maki Kawai ◽  
Masami Mori ◽  
Shunji Watabe ◽  
Ziyuan Liu ◽  
Yasunori Tabira ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Oxidation Process ◽  
Elementary Unit

ABSTRACTMolecular beam epitaxy of ultra thin films of Bi2Sr2CuO8-(2201 phase) is realized on the surface of SrTiO3 (100) and LaAlO3 (100) at the substrate temperature of 573 K, using 10-5Pa of NO2 as an oxidant. The film epitaxially grown from the surface of the substrate has identical in-plane lattice constant to the substrate itself. Such a growth can only be obtained on the substrate with similar lattice constant to those of the material to be formed. The crystallinity of the film strongly depended on the sequence of the metal depositions and the oxidation process. In the case of the Bi system, the elementary unit of the epitaxial growth has proved to be the subunit of the perovskite structure (Sr-Cu-Sr). The structure of the film grown on a substrate with large mismatch (MgO) is also discussed.

Hetero-epitaxial Growth of (1, 0, m+1) One Axis-oriented Bismuth Layered Structured Ferroelectrics Thin Films Directly Crystallized by MOCVD

2001 ◽  
Vol 688 ◽  
Author(s):  
Norimasa Nukaga ◽  
Takayuki Watanabe ◽  
Tomohiro Sakai ◽  
Toshimasa Suzuki ◽  
Yuji Nishi
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Remanent Polarization ◽  
Substrate Surface ◽  
Si Substrate ◽  
Direct Crystallization ◽  
Reciprocal Space Mapping ◽  
Axis Orientation ◽  
Tilting Angle ◽  
Key Techniques

AbstractBismuth layered structured ferroelectrics (BLSF) thin films with different number of octahedron number (m-number) were prepared by MOCVD and directly crystallized on the substrates. Directly-crystallized SrBi2Ta2O9 (SBT) (m=2) films on a (111) Pt/Ti/SiO2/Si substrate were ascertained to have a strong (103) one-axis orientation by the X-ray reciprocal space mapping and to be hetero-epitaxially grown on the (111) Pt grains by the TEM observation. Moreover, directly crystallized Bi2VO5.5 (m=1) and Bi4Ti3O12 (m=3) films deposited on the same substrate showed (102) and (104) one-axis preferred orientations, respectively. These orientations are basically the equal ones with SBT (103) orientation because the tilting angle of c-axis from the substrate surface is also about 55°. Therefore, the direct crystallization is one of the important key techniques for orientation control of BLSF films. Moreover, the directly crystallized SBT film deposited on a (111) Ir/TiOx/SiO2/Si substrate at 570 °C by ECR-MOCVD exhibited (103) one-axis orientation, which also originated from the local epitaxial growth on (111)-oriented Ir grains. The remanent polarization (2Pr), and the coercive field (Ec) of this film were 16.1 μC/cm2 and 83 kV/cm at an applied electric field of 360kV/cm, respectively. This Pr value is about 88% of the expected value of (103)-oriented SBT film from both the Pr values of the (116) and (001)-oriented epitaxial films and detailed crystal analysis.

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