A New Method of In-depth Profile Modification for High-Temperature and High-Salinity Reservoir

Author(s):  
Xiaofen Tang ◽  
Yuzhang Liu ◽  
He Qin ◽  
Lei Cai ◽  
Ruyi Jiang
2014 ◽  
Vol 1015 ◽  
pp. 268-271
Author(s):  
Yin Zhu Ye ◽  
Xing Cai Wu ◽  
Zheng Bo Wang ◽  
Li Ming Shao ◽  
Zhi Hui Zeng

Soft moveable gel (SMG) is a new kind of deep profile control microgels used in many oilfields. SMG has many advantages of high temperature, salt tolerance, shear resistance, controllable grain size, good control and oil displacement effect. The SMG deep profile control technique can remarkably improve oil recovery of the high temperature and high salinity oilfields. While the successful applications of SMG deep profile control technique are greatly decided by the size matching ability between SMG microgels micelle particles and reservoir pore throat. Therefore, three different experimental methods such as microscope, SEM analysis, and laser scattering method are used for particle characterization at first. Based on that, the new method utilizing near-infrared spectroscopy is innovated and developed. The method has the advantages of non-destructive measurement of original state, convenient, accurate and reliable results etc.. Finally, three levels of SMG particle size entitled by nanometer, micron, and sub-millimeter are systematically evaluated. The results show the sizes are 0.06, 21.37, about 39.24 μm respectively in the new method. Different particle size of SMG can be applied in deep profile control of high, medium or low permeability reservoirs correspondingly with high temperature and high salinity.


1992 ◽  
Vol 263 ◽  
Author(s):  
S. Mantl ◽  
H. L. Bay ◽  
Ch. Dieker

ABSTRACTA new method for the growth of epitaxial compound thin films, termed allotaxy, is proposed and the fabrication of the silicide heterostructure Si/CoSi2/Si(100) Is demonstrated. Allotaxy is a two. step process. In our example, Si is deposited on a heated Si substrate and then Co is coevaporated at varying rates such that a peaked Co-depth profile in Si is generated. At appropriate deposition conditions CoSi2 precipitates embedded in single crystalline Si are formed. These precipitates coarsen and coalesce into a buried, uniform, epitaxial CoSi2 layer during the second processing step, a high temperature anneal. Allotaxy should allow not only the epitaxial growth of silicides but also that of other binary, precipitates forming systems.


2015 ◽  
Vol 60 (6) ◽  
pp. 511-520 ◽  
Author(s):  
A.A. Efremov ◽  
◽  
V.G. Litovchenko ◽  
V.P. Melnik ◽  
O.S. Oberemok ◽  
...  

2013 ◽  
Author(s):  
Fan Zhang ◽  
Desheng Ma ◽  
Qiang Wang ◽  
Youyi Zhu ◽  
Wenli Luo

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