The Template Technique Applied to Epitaxial Growth of CrSi2 on Silicon (111)

1993 ◽  
Vol 317 ◽  
Author(s):  
John E. Manan ◽  
Robert G. Long ◽  
André Vantomme ◽  
Marc-A. Nicolet
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Film Formation ◽  
The Other ◽  
High Temperature Annealing ◽  
Growth Technique ◽  
Reactive Deposition ◽  
Chromium Evaporation

ABSTRACTThe template growth technique was applied to the growth of CrSi2 thin films on Si(111) by UHV E-gun evaporation. A 4He+ channeling yield of -50% was obtained for an epitaxial -2100 Å-thick film of continuous morphology grown at 450° C The heteroepitaxial relationship is CrSi2 (001) / Si (lll) with CrSi2[210] ∥ Si<110>.In the case of film formation simply via reactive deposition epitaxy (RDE, chromium evaporation onto hot substrates) a severe crystallinity-Morphology tradeoff is always observed. Continuous films are formed at low temperature but no long-range epitaxy is found. On the other hand, high temperature annealing of these films induces the formation of islands that show good epitaxial alignment with the substrate. This tradeoff was addressed with the template growth technique.

Effects of Two-Step Annealing on the Epitaxialgrowth of CoSi2 on Silicon

1982 ◽  
Vol 18 ◽  
Author(s):  
L. J. Chen ◽  
T. T. Chang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Epitaxial Growth ◽  
High Temperature Annealing ◽  
Transmission Electron ◽  
Cobalt Thin Films

The formation of epitaxial CoSi2 on silicon by both conventional and two-step annealing of cobalt thin films on silicon was studied by transmission electron microscopy.For two-step annealing, samples were first annealed at 350°C for 1 h, followed by high temperature annealing at 650–950°C for 1 h. The scheme was found to bevery effective in promoting the epitaxial growth of CoSi2 on silicon as well aseliminating faceted structures on Si(111). The results are discussed in terms of the driving away of impurities from the interfaces.

Low Temperature Epitaxial Growth of High Temperature Superconductors:Bi-Sr-Ca-Cu-O.

1991 ◽  
Vol 222 ◽  
Author(s):  
Maki Kawai ◽  
Masami Mori ◽  
Shunji Watabe ◽  
Ziyuan Liu ◽  
Yasunori Tabira ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Oxidation Process ◽  
Elementary Unit

ABSTRACTMolecular beam epitaxy of ultra thin films of Bi2Sr2CuO8-(2201 phase) is realized on the surface of SrTiO3 (100) and LaAlO3 (100) at the substrate temperature of 573 K, using 10-5Pa of NO2 as an oxidant. The film epitaxially grown from the surface of the substrate has identical in-plane lattice constant to the substrate itself. Such a growth can only be obtained on the substrate with similar lattice constant to those of the material to be formed. The crystallinity of the film strongly depended on the sequence of the metal depositions and the oxidation process. In the case of the Bi system, the elementary unit of the epitaxial growth has proved to be the subunit of the perovskite structure (Sr-Cu-Sr). The structure of the film grown on a substrate with large mismatch (MgO) is also discussed.

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

scholarly journals Low temperature epitaxial growth of boron-doped silicon thin films

2018 ◽  
Author(s):  
Marta Chrostowski ◽  
Rafaël Peyronnet ◽  
Wanghua Chen ◽  
Nicolas Vaissiere ◽  
José Alvarez ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Thin Films ◽  
Boron Doped ◽  
Doped Silicon

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

Low-temperature epitaxial growth of conductive LaNiO3 thin films by RF magnetron sputtering

2002 ◽  
Vol 410 (1-2) ◽  
pp. 114-120 ◽  
Author(s):  
Naoki Wakiya ◽  
Takaaki Azuma ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Rf Magnetron Sputtering

Epitaxial TaC Films for the Selective Area Growth of SiC

2008 ◽  
Vol 600-603 ◽  
pp. 183-186 ◽  
Author(s):  
Kenneth A. Jones ◽  
T.S. Zheleva ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad ◽  
M. Ervin ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Epitaxial Growth ◽  
Lattice Parameter ◽  
Selective Area Growth ◽  
Recrystallization Process ◽  
High Temperature Annealing ◽  
Selective Area ◽  
Area Growth ◽  
Lattice Matched

At sufficiently high temperatures PLD deposited TaC films can be grown epitaxially on 4H-SiC (0001) substrates; at lower temperatures the films recrystallize and ball up forming a large number of pinholes. The growth temperature for epitaxy was found to be 1000°C, and it was facilitated by the epitaxial growth of a thin (2 nm) transition layer of hexagonal Ta2C. High temperature annealing produced changes in the surface morphology, caused grain growth, and created pin holes through a recrystallization process in the films deposited at the lower temperatures, while the films deposited at the higher temperatures remained virtually unchanged. Using TEM it is shown that the (0001) basal planes of the hexagonal 4H-SiC and Ta2C phases are aligned, and they were also parallel to the (111) plane in the cubic TaC with the [101] cubic direction being parallel to the hexagonal [2110] hexagonal direction. The Ta2C interlayer most likely is formed because its lattice parameter in the basel plane (3.103 Ǻ) is intermediate between that of the 4H-SiC (3.08 Ǻ) and the TaC (3.150 Ǻ). Given that Al.5Ga.5N is lattice matched to TaC, it could be an excellent substrate for the growth of GaN/AlGaN heterostructures.

Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process

2005 ◽  
Vol 44 (1A) ◽  
pp. 343-349 ◽  
Author(s):  
Hideto Yanagisawa ◽  
Satoko Shinkai ◽  
Katsutaka Sasaki ◽  
Yoshio Abe ◽  
Akira Sakai ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Low Temperature Process
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