InGaAs/GaAs Quantum Well Structures Grown by Migration-Enhanced Epitaxy

1992 ◽  
Vol 263 ◽  
Author(s):  
J.E. Wu ◽  
H.M. Yoo ◽  
T.G. Stoebe
Keyword(s):  
Growth Rate ◽  
Quantum Well ◽  
Critical Thickness ◽  
Optical Quality ◽  
X Ray Diffraction ◽  
Strained Layers ◽  
Quantum Well Structures ◽  
X Ray ◽  
Migration Enhanced Epitaxy ◽  
And Migration

ABSTRACTGaAs/In.2Ga.8As/GaAs quantum well structures containing InGaAs layers of thickness over and under the critical thickness (hc) were studied, as grown by both conventional molecular beam epitaxy (C-MBE) and migration-enhanced epitaxy (MEE) techniques. A 6.0 monolayer per cycle (ML/cyc) growth rate, in contrast to a one or less-than-one ML/cyc growth rate used in a conventional MEE process, was used to grow In.2Ga.8As layers over hc. As-grown samples were characterized via photoluminescence, X-ray diffraction, and transmission electron microscopy (TEM). The 6.0 ML/cyc MEE-grown layers over hc show superior optical quality to MBE-grown layers with the same thickness. Both X-ray diffraction and TEM microstructure results indicate that the 6.0 ML/cyc MEE-grown In.2Ga.8As layers are still strained layers while those grown by conventional MBE method are not. The 6.0 ML/cyc MEE process seems to be advantageous for growing InGaAs layers over the critical thickness.

scholarly journals High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices

1993 ◽  
Vol 84 (3) ◽  
pp. 475-489
Author(s):  
G. Bauer ◽  
E. Koppensteiner ◽  
P. Hamberger ◽  
J. Nützel ◽  
G. Abstreiter ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray ◽  
Short Period ◽  
Short Period Superlattices

X-ray diffraction in quantum-well structures

1996 ◽  
Vol 221 (1-4) ◽  
pp. 487-493 ◽  
Author(s):  
E. Zolotoyabko ◽  
Y. Finkelstein ◽  
M. Blumina ◽  
D. Fekete
Keyword(s):  
Quantum Well ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

Tetragonal Strain in MBE GexSi1-x Films Grown on (100) Si Observed by Ion Channeling and X-Ray Diffraction

1983 ◽  
Vol 25 ◽  
Author(s):  
A. T. Fiory ◽  
L. C. Feldman ◽  
J. C. Bean ◽  
I. K. Robinson
Keyword(s):  
Molecular Beam ◽  
Critical Thickness ◽  
Ion Beam ◽  
Growth Surface ◽  
X Ray Diffraction ◽  
Strained Layers ◽  
X Ray ◽  
Ion Channeling ◽  
Pseudomorphic Growth ◽  
Beam Damage

ABSTRACTStructure of GexSi1-x alloy films grown on (100) Si by molecular beam epitaxy is analyzed by MeV He+ ion channeling and X-ray diffraction as functions of Ge concentration, film thickness and growth temperature. Critical thicknesses for pseudomorphic growth are determined for x ≤ 0.5, where coherent tetragonally-strained layers are observed. The average strain decreases approximately as the square-root of thickness when the critical thickness is exceeded. At temperatures near the threshold for islanding growth, surface roughness appears as a precursor to degradation of strained-layer epitaxy. No effect on the amount of the tetragonal strain was found in a study of ion-beam damage.

Periodicities in the X-Ray Diffraction of Low Order ALAS/GAAS Superlattices

1991 ◽  
Vol 230 ◽  
Author(s):  
Joseph Pellegrino ◽  
S. Qadri ◽  
W. Tseng ◽  
W. R. Miller ◽  
J. Comas
Keyword(s):  
Growth Conditions ◽  
X Ray Diffraction ◽  
Satellite Peak ◽  
X Ray ◽  
Migration Enhanced Epitaxy ◽  
Diffraction Peaks ◽  
Superlattice Structures ◽  
And Migration ◽  
Possible Cause ◽  
Good Agreement

AbstractIn this work we examine the physical properties for the superlattice system (GaAs)n1 (AlAs)n2/GaAs(100) for low values of n1 and n2, i.e., n1 = n2 = 3, 6, 12. Normal, interrupted growth, and migration enhanced epitaxy (MEE) growth techniques were used to grow the superlattice structures in a molecular beam epitaxy system. X-ray diffraction spectra were obtained, and the major and satellite peak positions were analyzed to obtain the superlattice periodicity. An analysis of the major diffraction peaks and their associated satellites produced superlattice periodicity in good agreement with theory. Diffraction peaks were also observed in regions adjacent to the primary diffraction peaks which did not occur in the expected satellite positions. An analysis of these peaks relative to the primary peak indicate periodicities corresponding to layer thickness greater than the intended period. One possible cause for these periodicities is growth conditions that exist during the growth of the superlattice which result in the deposition of fractional monolayers. In this study we present results which suggest that an arsenic-deficient growth condition may be a contributing factor in the deposition of fractional monolayers.

scholarly journals Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence

2000 ◽  
Vol 87 (3) ◽  
pp. 1251-1254 ◽  
Author(s):  
J. F. Chen ◽  
P. Y. Wang ◽  
J. S. Wang ◽  
N. C. Chen ◽  
X. J. Guo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

High Resolution X-ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1995 ◽  
Vol 39 ◽  
pp. 439-448
Author(s):  
A Sanz-Hervas ◽  
A Sacedón ◽  
E.J Abril ◽  
J.L Sanchez-Rojas ◽  
C. Villar ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Well ◽  
Structural Information ◽  
Multiple Quantum Well ◽  
Growth Conditions ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Quantum Well Structures ◽  
X Ray

In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.

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