Characterization of Stress and Texture in Rtcvd Poly-Si Layers by X-Ray Diffraction

1991 ◽  
Vol 239 ◽  
Author(s):  
István Bársony ◽  
Jos G.E. Klappe ◽  
Tom W. Ryan
Keyword(s):  
Deposition Temperature ◽  
Polycrystalline Silicon ◽  
Columnar Structure ◽  
Film Stress ◽  
Grain Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Residual Film ◽  
Post Deposition

ABSTRACTThe properties of polycrystalline silicon layers deposited by RTCVD have been studied by texture, stress and electrical analyse. The intrinsic layers intended for applications in integrated IC processing are very much textured with the preferred orientation depending on deposition temperature and atmosphere. Very low residual film stress in the order of 10 dyn/cm2 was detected, and a transition from compressive to tensile stress with increasing deposition temperature around 800°C was observed. This was associated with the development of the columnar structure by the (110) orientation becoming dominant at the expense of the (100) texture. Also the effect of post-deposition anneal ambience on the grain structure has been studied. Grain size and grain-boundary trapping in after doped layers have been evaluated in P-implanted RTA activated layers.

Synthesis and Characterization of Quaternary Ti-Si-C-N Film Deposited by Middle Frequency Magnetron Sputtering

2012 ◽  
Vol 581-582 ◽  
pp. 540-543
Author(s):  
Jin Long Jiang ◽  
Di Chen ◽  
Wei Jun Zhu
Keyword(s):  
Magnetron Sputtering ◽  
Elastic Recovery ◽  
Amorphous Structure ◽  
Columnar Structure ◽  
Maximum Hardness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Large Particles ◽  
Si Wafer

Quaternary Ti-Si-C-N films were deposited Si wafer by middle frequency magnetron sputtering Ti80Si20 twin-targets in mixture atmosphere of Ar, CH4 and N2. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) results indicate that the films present an amorphous structure with no columnar structure. These films are quite uniform and dense without large particles. The film deposited at 10 sccm CH4 and 10 sccm N2 flow rates exhibits a maximum hardness of 18.9 GPa and high elastic recovery of 97%.

Growth and structural characterization of Cu2ZnSnSe4 compound for solar cells

2014 ◽  
Vol 92 (7/8) ◽  
pp. 902-904 ◽  
Author(s):  
N. Seña ◽  
F. Mesa ◽  
A. Dussan ◽  
G. Gordillo
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Deposition Temperature ◽  
Mass Ratio ◽  
Electrical Behavior ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Parameters ◽  
Stage Process

This work reports results concerning the effect of the deposition parameters on the structural properties of Cu2ZnSnSe4 thin films, grown through a chemical reaction of the metallic precursors via coevaporation in a three-stage process. X-ray diffraction measurements revealed that the samples deposited by selenization of Cu and Sn grow in the Cu2Se and SnSe2 phases, respectively. The effect of deposition temperature and Cu/Se mass ratio on the transport properties of Cu2ZnSnSe4 films was analyzed. The electrical behavior of the compound was studied.

Preparation and Characterization of PMN (PbMgxNb1−xOz) Films by Sputtering

1994 ◽  
Vol 361 ◽  
Author(s):  
J.S. Cross ◽  
M. Tsukada ◽  
K. Kurihara ◽  
N. Kamehara ◽  
K. Niwa
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Negative Ion ◽  
Lead Target ◽  
X Ray Diffraction ◽  
X Ray ◽  
Magnesium Niobate ◽  
Icp Analysis ◽  
Deposited Films

ABSTRACTThin films of Pb(MgxNb1−x)Oz were produced by reactive sputtering from a lead target and columbite magnesium niobate powder targets at temperatures of 500–700°C on Pt/Ti/Si, Pt/SiO2/Si, MgO(lOO) and SrTiO3(100) substrates. The films in general deposited on Pt consisted of PbO and pyrochlore phases depending upon the deposition temperature. ICP analysis revealed that the films contained slightly less Mg than the target. This was attributed to negative ion preferential resputtering of the film within the discharge. However, films deposited at 650°C on MgO and SrTiO3 substrates from a lead target and magnesium niobate target which contained excess MgO, contained a highly oriented perovskite (100) Pb(Mg1/3Nb2/3)O3 [PMN] phase according to X-ray diffraction analysis. It was observed that the substrate composition and orientation greatly influenced the crystallinity of the deposited films.

Characterization of TiN Diffusion Barrier for Submicron Technology

1992 ◽  
Vol 260 ◽  
Author(s):  
G. A. Dixit ◽  
F. S. Chen ◽  
H. Zhang ◽  
G. D. Yao ◽  
C. C. Wei ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Metal Layer ◽  
Metal Films ◽  
X Ray Diffraction ◽  
Tin Films ◽  
X Ray ◽  
Barrier Metal ◽  
Tin Diffusion Barrier ◽  
Post Deposition

AbstractThe electrical properties and structure of reactively sputtered titanium nitride barrier metal films have been characterized. Junction leakages and yields for different post deposition treatments of the barrier metal layer are reported. TEM, x-ray diffraction and Auger electron spectroscopy have been used for the physical characterization of the TiN films.

Characterization of Silicon Carbide Grown on RB-SiC by Chemical Vapor Deposition

2010 ◽  
Vol 434-435 ◽  
pp. 499-501 ◽  
Author(s):  
Fan Tao Meng ◽  
Shan Yi Du ◽  
Gui Shan Tian ◽  
Yu Min Zhang
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sic Whiskers ◽  
Deposition Conditions

Silicon carbide is one of the best materials for satellite mirror and chemical vapor deposition (CVD) is an effective method of preparing SiC whiskers and films. In this paper, SiC whiskers or films were deposited on substrates of RB-SiC in an upright chemical vapor deposition furnace of Φ150mm × 450 mm with methyltrichloride silicane (MTS) as precursor gas and H2 as carrier gas under dilute gases of different H2/Ar ratio and different deposition temperature between 1050°C and 1150°C. The morphology and composition of the CVD-SiC grown on RB-SiC substrate were determined by scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. As a result, whisker-like, worm-like or ball-like SiC can be respectively obtained dependent on different deposition conditions such as H2/Ar ratio and deposition temperature, and the composition of the productions are determined as β-SiC by XRD. Furthermore, the deposition mechanisms of different morphologies of SiC are introduced.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

High Resolution Replication of Organoclay Surfaces

1982 ◽  
Vol 40 ◽  
pp. 576-577
Author(s):  
W. W. Barker ◽  
W. E. Rigsby ◽  
V. J. Hurst ◽  
W. J. Humphreys
Keyword(s):  
Clay Mineral ◽  
Organic Molecule ◽  
Organic Molecules ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
X Ray ◽  
Naturally Occurring ◽  
Silicate Layers ◽  
Mineral Identification

Experimental clay mineral-organic molecule complexes long have been known and some of them have been extensively studied by X-ray diffraction methods. The organic molecules are adsorbed onto the surfaces of the clay minerals, or intercalated between the silicate layers. Natural organo-clays also are widely recognized but generally have not been well characterized. Widely used techniques for clay mineral identification involve treatment of the sample with H2 O2 or other oxidant to destroy any associated organics. This generally simplifies and intensifies the XRD pattern of the clay residue, but helps little with the characterization of the original organoclay. Adequate techniques for the direct observation of synthetic and naturally occurring organoclays are yet to be developed.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Synthesis and characterization of TiN / Ti / AISI 410 coatings

2018 ◽  
Vol 2 (1) ◽  
pp. 7
Author(s):  
S Chirino ◽  
Jaime Diaz ◽  
N Monteblanco ◽  
E Valderrama
Keyword(s):  
Synthesis And Characterization ◽  
Photoemission Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Columnar Grains ◽  
Tin Thin Films ◽  
Steel Aisi ◽  
Interacting Surfaces ◽  
Stainless Steel Aisi

The synthesis and characterization of Ti and TiN thin films of different thicknesses was carried out on a martensitic stainless steel AISI 410 substrate used for tool manufacturing. The mechanical parameters between the interacting surfaces such as thickness, adhesion and hardness were measured. By means of the scanning electron microscope (SEM) the superficial morphology of the Ti/TiN interface was observed, finding that the growth was of columnar grains and by means of EDAX the existence of titanium was verified.  Using X-ray diffraction (XRD) it was possible to observe the presence of residual stresses (~ -3.1 GPa) due to the different crystalline phases in the coating. Under X-ray photoemission spectroscopy (XPS) it was possible to observe the molecular chemical composition of the coating surface, being Ti-N, Ti-N-O and Ti-O the predominant ones.

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