Reaction Growth and Morphology of An Aluminide Compound in Al-Cu/Ti-W Bilayers
Keyword(s):
Cu Film
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ABSTRACTThe effect of copper content on the reaction growth and morphology of Al12W in Al-Cu/Ti-W bilayers was studied with plan view and cross-section transmission electron microscopy. After heat treatment at 450°C for 30 minutes, a spiked growth of A112W penetrated into the grain boundaries of Al-0.5 wt.% Cu film by the reaction of Al with the Ti-W sublayer. Increasing copper addition from 0.5 to 1.5% inhibited the spiked growth of AI12W, resulting in a flat and planar layer (-150Å) of Al12W. It is suggested that increasing copper segregation in the aluminum grain boundaries during heat treatment at 450°C causes a significant change in the growth morphology of the Al12W compound.
1988 ◽
Vol 28
(12)
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pp. 1127-1137
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1996 ◽
Vol 12
(8)
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pp. 628-634
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2009 ◽
Vol 500
(1-2)
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pp. 164-169
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1998 ◽
Vol 48
(5)
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pp. 207-211
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