Reaction Growth and Morphology of An Aluminide Compound in Al-Cu/Ti-W Bilayers

1992 ◽  
Vol 260 ◽  
Author(s):  
M. Park ◽  
S. J. Krause ◽  
S. R. Wilson

ABSTRACTThe effect of copper content on the reaction growth and morphology of Al12W in Al-Cu/Ti-W bilayers was studied with plan view and cross-section transmission electron microscopy. After heat treatment at 450°C for 30 minutes, a spiked growth of A112W penetrated into the grain boundaries of Al-0.5 wt.% Cu film by the reaction of Al with the Ti-W sublayer. Increasing copper addition from 0.5 to 1.5% inhibited the spiked growth of AI12W, resulting in a flat and planar layer (-150Å) of Al12W. It is suggested that increasing copper segregation in the aluminum grain boundaries during heat treatment at 450°C causes a significant change in the growth morphology of the Al12W compound.

1988 ◽  
Vol 28 (12) ◽  
pp. 1127-1137 ◽  
Author(s):  
D.A. Hardwick ◽  
A.W. Thompson ◽  
I.M. Bernstein

2020 ◽  
Vol 326 ◽  
pp. 04004
Author(s):  
Otto Lunder ◽  
Julie Grønvold ◽  
Calin Daniel Marioara ◽  
Sigurd Wenner ◽  
Trond Furu

Aluminium alloys in the 6000 series may become susceptible to intergranular corrosion (IGC) by unfavourable thermomechanical processing in combination with presence of Cu and a low Mg/Si ratio. The IGC susceptibility has been related to the segregation of Cu during artificial ageing to form a nearly continuous Cu film along the grain boundaries with an anodic solute depleted zone adjacent to it. In this work, extruded alloys 6005 and C28 as well as two variants of 6016 automotive sheet were subjected to various degrees of deformation by rolling or stretching before artificial aging. Accelerated IGC testing showed that pre-deformation significantly improved the IGC resistance of the Cu containing extruded alloys, while no improvement was observed for the 6016 sheet materials containing < 0.01 wt% Cu. High resolution scanning transmission electron microscopy (STEM) of pre-deformed 6005 alloy showed precipitation of Cu-containing Q' phase on dislocations. As a result, the amount of Cu available for diffusion to the grain boundaries is reduced, which might explain why a beneficial effect of pre-deformation on the IGC resistance was observed only for the Cu-containing materials.


2003 ◽  
Vol 763 ◽  
Author(s):  
Chun-Ming Li ◽  
Chang-Hui Lei ◽  
Ian M. Robertson ◽  
Angus Rockett

AbstractThe microstructure and microchemistry of Cu(In, Ga)Se2 (CIGS) films have been analyzed by means of transmission electron microscopy (TEM). Specimens were obtained from a number of groups producing high-performance solar cells from these materials. Both plan-view and cross-sectional TEM samples were prepared by mechanical grinding and ion milling. Twins can be found easily within the films while dislocations are present only in a few grains and with low density. No extended structural defects such as stacking faults were discovered. X-ray energy dispersive spectroscopy was used to study the chemical composition of grains and grain boundaries. Experimental results showed no difference between the composition in the grain interiors and the grain boundary. In addition, there is no obvious enhancement of oxygen and sodium at grain boundaries. Structural depth dependences were also not found.


1991 ◽  
Vol 238 ◽  
Author(s):  
Elsie C. Urdaneta ◽  
David E. Luzzi ◽  
Charles J. McMahon

ABSTRACTBismuth-induced grain boundary faceting in Cu-12 at ppm Bi polycrystals was studied using transmission electron microscopy (TEM). The population of faceted grain boundaries in samples aged at 600°C was observed to increase with heat treatment time from 15min to 24h; aging for 72h resulted in de-faceting, presumably due to loss of Bi from the specimen. The majority of completely faceted boundaries were found between grains with misorientation Σ=3. About 65% of the facets of these boundaries were found to lie parallel to crystal plane pairs of the type {111}1/{111]2- The significance of these findings in light of recent high resolution electron microscopy experiments is discussed.


2008 ◽  
Vol 8 (9) ◽  
pp. 4822-4825 ◽  
Author(s):  
Jae-Youn Choi ◽  
Wenguo Dong ◽  
Dong Joo Choi ◽  
Chong S. Yoon ◽  
Young-Ho Kim

Nanoparticles of Cu or Cu oxide dispersed in a polyimide (PI) film were fabricated by reaction of polyamic acid with a thin Cu film during imidization. In this paper, the thermal stability of the Cu or Cu oxide nanoparticles was investigated under various atmospheres. The PI/nanoparticle composites were heat-treated at 140 °C and 250 °C in air, N2, Ar, and 5% H2 atmospheres. Nanoparticles in the PI film were characterized by UV-VIS spectroscopy and transmission electron microscopy. The optical absorption peaks originating from Cu or Cu2O nanoparticles were changed by heat-treatment in different atmospheres. When Cu nanoparticles were oxidized by heat-treatment in air, the surface plasmon resonance (SPR) peak originating from the Cu nanoparticles disappeared. The quantum confined absorption peak of Cu2O was not affected by heat-treatment in N2 or Ar. Cu2O nanoparticles were reduced by heat-treatment at 250 °C in 5% H2 atmosphere and a new SPR peak appeared. Our results show that Cu nanoparticles are easily oxidized and highly dense Cu nanoparticles can be formed by reducing Cu2O nanoparticles.


1989 ◽  
Vol 162 ◽  
Author(s):  
J. S. Morgan ◽  
T. J. Kistenmacher ◽  
W. A. Bryden ◽  
T. O. Poehler

ABSTRACTThis paper describes growth morphology and structure of rfmagnetron sputtered thin films of InN, studied by plan-view transmission electron microscopy (TEM) and by scanning electron microscopy (SEM). Films deposited on TEM grids, (0001) sapphire, (111) silicon and amorphous quartz were prepared for TEM by mechanical abrasion of the substrate followed by sputter etching. At low deposition temperatures (<400°C), films consisted of small, basal-oriented, columnar grains. Above 500°C, growth consisted of larger, faceted, basal-oriented, mesa-island grains. Observations of growth morphology and defect structure are correlated with structural, compositional and electrical properties.


1998 ◽  
Vol 48 (5) ◽  
pp. 207-211 ◽  
Author(s):  
Susumu IKENO ◽  
Kenji MATSUDA ◽  
Katsuyuki NAKAJIMA ◽  
Seichi RENGAKUJI ◽  
Yasuhiro UETANI

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