Electron Microscopy of InN Films

1989 ◽  
Vol 162 ◽  
Author(s):  
J. S. Morgan ◽  
T. J. Kistenmacher ◽  
W. A. Bryden ◽  
T. O. Poehler
Keyword(s):  
Electron Microscopy ◽  
Defect Structure ◽  
Growth Morphology ◽  
Plan View ◽  
Mechanical Abrasion ◽  
Transmission Electron ◽  
Morphology And Structure ◽  
Columnar Grains ◽  
Amorphous Quartz ◽  
Scanning Electron

ABSTRACTThis paper describes growth morphology and structure of rfmagnetron sputtered thin films of InN, studied by plan-view transmission electron microscopy (TEM) and by scanning electron microscopy (SEM). Films deposited on TEM grids, (0001) sapphire, (111) silicon and amorphous quartz were prepared for TEM by mechanical abrasion of the substrate followed by sputter etching. At low deposition temperatures (<400°C), films consisted of small, basal-oriented, columnar grains. Above 500°C, growth consisted of larger, faceted, basal-oriented, mesa-island grains. Observations of growth morphology and defect structure are correlated with structural, compositional and electrical properties.

The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition

2002 ◽  
Vol 716 ◽  
Author(s):  
Seok Woo Hong ◽  
Yong Sun Lee ◽  
Ki-Chul Park ◽  
Jong-Wan Park
Keyword(s):  
Electron Microscopy ◽  
Diffusion Barriers ◽  
Copper Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Electroless Copper ◽  
Sheet Resistance Measurement ◽  
Scanning Electron

AbstractThe effect of microstructure of dc magnetron sputtered TiN and TaN diffusion barriers on the palladium activation for autocatalytic electroless copper deposition has been investigated by using X-ray diffraction, sheet resistance measurement, field emission scanning electron microscopy (FE-SEM) and plan view transmission electron microscopy (TEM). The density of palladium nuclei on TaN diffusion barrier increases as the grain size of TaN films decreases, which was caused by increasing nitrogen content in TaN films. Plan view TEM results of TiN and TaN diffusiton barriers showed that palladium nuclei formed mainly on the grain boundaries of the diffusion barriers.

Structural Study of SIC/AIN Bilayers and Trilayers on SI and 6H-SIC

1994 ◽  
Vol 339 ◽  
Author(s):  
D. Prasad Beesabathina ◽  
K. Fekade ◽  
K. Wongchotigul ◽  
M. G. Spencer ◽  
L. Salamanca-Riba
Keyword(s):  
Electron Microscopy ◽  
Amorphous Layer ◽  
Growth Morphology ◽  
Epitaxial Relationship ◽  
Nucleation Layer ◽  
Single Crystalline ◽  
Bulk Layer ◽  
Transmission Electron ◽  
Columnar Grains ◽  
Lattice Images

ABSTRACTThe growth morphology and microstructure of SiC/AlN/6H-SiC, SiC/AlN/SiC/Si, and SiC/AlN/Si heterostructures grown by LPCVD were studied using transmission electron microscopy. The SiC/AIN bilayers grown on 6H-SiC substrates were single crystalline and comprised of 3C-SiC and 2H-AlN. The epitaxial relationship between 2H-AlN and 6H-SiC is [0001]AlN//[0001]SiC. The SiC/AlN/SiC trilayers and the SiC/AIN bilayer grown on (001)Si were composed of 3H-SiC and 2H-AlN. However, the 2H-AlN layer was polycrystalline even though the (001)3C-SiC was single crystalline. The preferred orientation of the AlN layers in SiC/AlN/SiC/Si and SiC/AlN/Si are [0112] and [0002], respectively. The AlN/3C-SiC interface is relatively sharp compared to the AIN/Si interface in which an amorphous layer close to the interface was observed. In general, the polycrystalline AlN structure has two distinct layers: (1) nucleation layer and (2) bulk layer. High resolution lattice images of the polycrystalline AlN showed amorphous areas and small misoriented crystallites in the nucleation layer. The bulk layer consists of preferentially oriented large columnar grains.

INFLUENCE OF AMMONIATING TIME ON Nb-CATALYZED GaN NANOSTRUCTURED MATERIALS

2011 ◽  
Vol 10 (06) ◽  
pp. 1209-1214 ◽  
Author(s):  
HUIZHAO ZHUANG ◽  
JIE WANG ◽  
XIAOKAI ZHANG ◽  
JUNLIN LI
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Nanostructured Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Turn On ◽  
Transmission Electron ◽  
Morphology And Structure ◽  
Scanning Electron

Gallium nitride ( GaN ): nanostructured materials are synthesized by ammoniating Ga2O3/Nb films which are deposited in turn on Si(111) substrates at 900°C. The morphology and structure of the nanostructured materials are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Optical property of GaN nanostructured materials are analyzed by photoluminescence (PL). The results demonstrated that as-synthesized nanostructured materials are hexagonal wurtzite-structured. Ammoniating time of the samples has an evident influence on the morphology of GaN nanostructured materials synthesized by this method. The PL spectra indicate good emission property for the nanostructured materials. Finally, the growth mechanism is also briefly discussed.

Property Investigation of Pt-Rh Alloy Nanopowders Obtained by Conductor Electric Explosion Method

2016 ◽  
Vol 685 ◽  
pp. 596-600
Author(s):  
Sergey P. Zhuravkov ◽  
A.V. Pustovalov ◽  
Nikolay A. Yavorovsky ◽  
A.V. Korshunov ◽  
M.N. Vlasyuk ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electric Explosion ◽  
Nanosized Powders ◽  
X Ray ◽  
Morphological Studies ◽  
Transmission Electron ◽  
Bet Method ◽  
Morphology And Structure ◽  
Explosion Method ◽  
Scanning Electron

Results of structural-morphological studies of platinum-rhodium alloy nanosized powders obtained by method of conductor electric explosion in argon are shown in the paper. Investigation results of specific surface, morphology and structure are given in the article. Optimal modes of explosion are found and described. Methods of transmission electron microscopy, scanning electron microscopy, X-ray phase analysis and BET-method were used to investigate properties.

Growth of CuInS2 Films on Crystalline Substrates

1996 ◽  
Vol 426 ◽  
Author(s):  
R. Hunger ◽  
R. Scheer ◽  
M. Alt ◽  
H. J. Lewerenz
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Molecular Beam ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
Growth Morphology ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron

AbstractCuInS2 films were grown by molecular beam epitaxy (MBE) on hydrogen terminated Si(111) substrates with 4° miscut. X-ray diffraction (XRD) texture analysis reveals that CuInS2 was grown heteroepitaxially with the epitaxial relationships CuInS2(112) II Si(111) and [111] II [111]. Moreover, a substantial amount of rotational twins is observed. The crystalline order is maintained across the interface as observed by cross-sectional transmission electron microscopy (XTEM). XRD and scanning electron microscopy (SEM) investigations show that nonstoichiometric preparation greatly influences the growth morphology and leads to the formation of secondary phases.

Synthesis and Properties of GaN Nanostructures

2005 ◽  
Vol 475-479 ◽  
pp. 3367-3370
Author(s):  
Hong-Lei Ma ◽  
Cheng Shan Xue ◽  
Ying Ge Yang ◽  
Hui Zhao Zhang ◽  
Jin Ma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Hexagonal Wurtzite Structure ◽  
X Ray Diffraction ◽  
High Quality ◽  
One Dimensional ◽  
X Ray ◽  
Gan Nanowires ◽  
Transmission Electron ◽  
Morphology And Structure ◽  
Scanning Electron

One-dimensional GaN nanostructure films were successfully synthesized by the recently developed sputtering post-nitridation technique. The morphology and structure of GaN nanowires are investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). The results indicate that the crystalline GaN nanostructures have a hexagonal wurtzite structure, and there is not any other phase such as Ga2O3 or Ga in the specimen. It also confirms that high quality crystal was obtained in the resulting sample due to the lattice defects decreased and the crystallinity improved in the process of nitridation at high temperature. The growth mechanism of the GaN nanostructures is briefly discussed.

scholarly journals Growth of ZnO Nanowires in Aqueous Solution by a Dissolution-Growth Mechanism

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Shaojing Bu ◽  
Chunxiang Cui ◽  
Qingzhou Wang ◽  
Ling Bai
Keyword(s):  
Electron Microscopy ◽  
Aqueous Solution ◽  
Growth Mechanism ◽  
Zno Nanowires ◽  
Film Morphology ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Morphology And Structure ◽  
Scanning Electron

A novel methodology based on the dissolution-growth mechanism was developed to prepare ZnO nanowires films. The film morphology and structure were investigated by using field emission scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction analysis methods. The results show that the ZnO nanowires are single crystallinec-oriented wurtzite. The ZnO rod crystals were eroded to provide the growth primitive of ZnO nanowires, which formed on top of the rod crystals when the erosion reaction got the equilibrium. The length of the resultant nanowires is rather large because the successive erosion of the rod crystals maintains the low concentration ofZn2O(OH)2n−2in the aqueous solution.

Ultrastructural Analysis of the Salivary Glands of Gromphadorhina Portentosa (Schaum)

1977 ◽  
Vol 35 ◽  
pp. 638-639
Author(s):  
P.J. Dailey
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Salivary Glands ◽  
Secretory Vesicles ◽  
The Past ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
Gromphadorhina Portentosa ◽  
Scanning Electron ◽  
Topographical Relief

The structure of insect salivary glands has been extensively investigated during the past decade; however, none have attempted scanning electron microscopy (SEM) in ultrastructural examinations of these secretory organs. This study correlates fine structure by means of SEM cryofractography with that of thin-sectioned epoxy embedded material observed by means of transmission electron microscopy (TEM).Salivary glands of Gromphadorhina portentosa were excised and immediately submerged in cold (4°C) paraformaldehyde-glutaraldehyde fixative1 for 2 hr, washed and post-fixed in 1 per cent 0s04 in phosphosphate buffer (4°C for 2 hr). After ethanolic dehydration half of the samples were embedded in Epon 812 for TEM and half cryofractured and subsequently critical point dried for SEM. Dried specimens were mounted on aluminum stubs and coated with approximately 150 Å of gold in a cold sputtering apparatus.Figure 1 shows a cryofractured plane through a salivary acinus revealing topographical relief of secretory vesicles.

Two- or three-way observations of the identical cell elements within the same sections by LM, TEM and/or SEM

1978 ◽  
Vol 36 (2) ◽  
pp. 82-83 ◽  
Author(s):  
Nakazo Watari ◽  
Yasuaki Hotta ◽  
Yoshio Mabuchi
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Fine Structure ◽  
Light Microscopy ◽  
Thin Sections ◽  
Transmission Electron ◽  
Identical Cell ◽  
Electron Microscopes ◽  
Scanning Electron

It is very useful if we can observe the identical cell elements within the same sections by light microscopy (LM), transmission electron microscopy (TEM) and/or scanning electron microscopy (SEM) sequentially, because, the cell fine structure can not be indicated by LM, while the color is; on the other hand, the cell fine structure can be very easily observed by EM, although its color properties may not. However, there is one problem in that LM requires thick sections of over 1 μm, while EM needs very thin sections of under 100 nm. Recently, we have developed a new method to observe the same cell elements within the same plastic sections using both light and transmission (conventional or high-voltage) electron microscopes.In this paper, we have developed two new observation methods for the identical cell elements within the same sections, both plastic-embedded and paraffin-embedded, using light microscopy, transmission electron microscopy and/or scanning electron microscopy (Fig. 1).

Scanning and Transmission Microscopy of Nematocyst Batteries in Epitheliomuscular Cells of Hydra

1971 ◽  
Vol 29 ◽  
pp. 410-411 ◽  
Author(s):  
Jane A. Westfall ◽  
S. Yamataka ◽  
Paul D. Enos
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Osmium Tetroxide ◽  
External Surface ◽  
Three Dimensional ◽  
Surface Structures ◽  
Transmission Microscopy ◽  
Transmission Electron ◽  
Freeze Dried ◽  
Scanning Electron

Scanning electron microscopy (SEM) provides three dimensional details of external surface structures and supplements ultrastructural information provided by transmission electron microscopy (TEM). Animals composed of watery jellylike tissues such as hydras and other coelenterates have not been considered suitable for SEM studies because of the difficulty in preserving such organisms in a normal state. This study demonstrates 1) the successful use of SEM on such tissue, and 2) the unique arrangement of batteries of nematocysts within large epitheliomuscular cells on tentacles of Hydra littoralis.Whole specimens of Hydra were prepared for SEM (Figs. 1 and 2) by the fix, freeze-dry, coat technique of Small and Màrszalek. The specimens were fixed in osmium tetroxide and mercuric chloride, freeze-dried in vacuo on a prechilled 1 Kg brass block, and coated with gold-palladium. Tissues for TEM (Figs. 3 and 4) were fixed in glutaraldehyde followed by osmium tetroxide. Scanning micrographs were taken on a Cambridge Stereoscan Mark II A microscope at 10 KV and transmission micrographs were taken on an RCA EMU 3G microscope (Fig. 3) or on a Hitachi HU 11B microscope (Fig. 4).

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