Formation of Buried Oxide in Mev Oxygen Implanted Silicon
Keyword(s):
AbstractWe have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x1018/cm2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO2.
1996 ◽
Vol 11
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pp. 2990-2999
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1993 ◽
Vol 8
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pp. 1019-1027
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1988 ◽
Vol 6
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pp. 2904-2909
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2009 ◽
Vol 15
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pp. 54-61
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