scholarly journals Formation of Buried Oxide in Mev Oxygen Implanted Silicon

1987 ◽  
Vol 107 ◽  
Author(s):  
C.W. Nieh ◽  
F. Xiong ◽  
C. C. Ahn ◽  
Z. Zhou ◽  
D. N. Jamieson ◽  
...  

AbstractWe have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x1018/cm2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO2.

1998 ◽  
Vol 553 ◽  
Author(s):  
R. Lück ◽  
M. Scheffer ◽  
T. Gödecke ◽  
S. Ritschj ◽  
C. Beelif

AbstractAn extensive investigation into the At-AICo-AlNi ternary subsystem is presented. Observations have used the techniques of differential thermal analysis, magnetothermal analysis, dilatometry, metallography, X-ray diffraction, transmission electron microscopy, and high-resolution electron microscopy. Representative graphic documentation, as liquidus projection surface, isothermal sections, temperature-concentration section, and reaction scheme are presented. 11 phases from the binaries Al-Co and Al-Ni and the three ternary phases Y2 (Co2NiAl9), X and the decagonal phase D were found at room temperature. The decagonal phase is formed from the melt peritectically via a critical tie line and its primary formation area dominates at the liquidus projection surface. 45 three-phase regions are present according to the reaction scheme.Several phase variants in the area of the decagonal phase were detected by transmission electron microscopy. Phase fields of the variants were determined from samples quenched from their respective temperatures. In-situ experiments on transformations of variants were performed by dilatometric measurements. The subdivision of the D phase area into the fields of the variants is discussed.


1992 ◽  
Vol 263 ◽  
Author(s):  
A.E.M. de Veirman ◽  
F. Hakkens ◽  
W. Coene ◽  
F.J.A. Den Broeder

ABSTRACTThe results of a transmission electron microscopy study of Co/Au and Co/Pd multilayers are reported. Special emphasis is put on the epitaxial growth and the relaxation of the misfit strain of these high misfit systems. In bright-field cross-sectional images, periodic contrast fringes are observed at the interfaces, which are the result of Moiré interference and which allow determination of the degree of misfit relaxation at the interface. It was established that 80-85% of the misfit is relaxed. From high resolution electron microscopy images the Burgers vector of the misfit dislocations was derived, being a/2<110> lying in the (111) interface plane. The results obtained for the Co/Au and Co/Pd multilayers will be discussed in comparison with those obtained for a bilayer of Co and Au.


1996 ◽  
Vol 11 (12) ◽  
pp. 2990-2999 ◽  
Author(s):  
Y. Yan ◽  
D. A. Cardwell ◽  
A. M. Campbell ◽  
W. M. Stobbs

The microstructure of large grain melt-processed YBa2Cu3O7−δ containing 10 molar% excess Y2BaCuO5 prepared and oxygenated under atmospheric pressure has been investigated by transmission electron microscopy (TEM) and optical microscopy. These materials always contain parallel structural and microscopic platelet-like features in the crystallographic a-b plane of a few microns spacing which have been variously described as grain boundaries or microcracks. We have observed such features, which clearly influence the flow of current in melt-processed YBCO, to consist of copper deficient, impurity phase material which can be either amorphous or crystalline in nature. A variety of defects have been observed by high-resolution electron microscopy (HREM) in the vicinity of these platelet boundaries, including double and triple CuO layer stacking faults, which may constitute effective flux pinning sites.


2009 ◽  
Vol 1242 ◽  
Author(s):  
R. Esparza ◽  
A. Aguilar ◽  
A. Escobedo-Morales ◽  
C. Patiño-Carachure ◽  
U. Pal ◽  
...  

ABSTRACTZinc peroxide (ZnO2) nanocrystals were directly produced by hydrothermal process. The nanocrystals were synthesized using zinc acetate as precursor and hydrogen peroxide as oxidant agent. The ZnO2 powders were characterized by X-ray powder diffraction and transmission electron microscopy. The results of transmission electron microscopy indicated that the ZnO2powders consisted of nanocrystals with diameters below to 20 nm and a faceted morphology. High resolution electron microscopy observations have been used in order to the structural characterization. ZnO2 nanocrystals exhibit a well-crystallized structure.


1990 ◽  
Vol 183 ◽  
Author(s):  
C. P. Burmester ◽  
S. Quong ◽  
L. T. Wille ◽  
R. Gronsky ◽  
B. T. Ahn ◽  
...  

AbstractHigh resolution electron microscopy is used to investigate the effect of electron irradiation induced oxygen loss on the states of partial order in YBa2Cu3Oz. Contrast effects visible in the [001] zone image as a result of the degree of the out-of-plane correlation of these ordered states are investigated. Using statistical simulations to aid in the analysis of the HREM images, an interpretation based on a kinetically limited evolution of the variation of long range [001] ordering is proposed.


1993 ◽  
Vol 8 (5) ◽  
pp. 1019-1027 ◽  
Author(s):  
F. Hakkens ◽  
A. De Veirman ◽  
W. Coene ◽  
Broeder F.J.A. den

The structure of Co/Pd and Co/Au (111) multilayers is studied using transmission electron microscopy and high resolution electron microscopy. We focused on microstructure, atomic stacking (especially at the interfaces), and coherency, as these are structural properties that have considerable magnetic effects. A columnar structure with a strong curvature of the multilayer influenced by substrate temperature during growth is observed. High resolution imaging shows numerous steps at the interfaces of the multilayer structure and the presence of misfit dislocations. In bright-field images, periodic contrast fringes are observed at these interfaces as the result of moiré interference. These moiré fringes are used to study the misfit relaxation at the interfaces, whereas electron diffraction gives the average relaxation over the whole layer. Both measurements determined that, for Co/Pd as well as Co/Au multilayers, 80–85% of the misfit is relaxed and 20–15% remains in the form of strain, independent of the Co layer thickness in the regime studied.


2009 ◽  
Vol 15 (1) ◽  
pp. 54-61 ◽  
Author(s):  
M.A. Mat Yajid ◽  
G. Möbus

AbstractWe examine chemical mapping of reaction phases in a Cu-Al multilayer system using low-loss electron energy loss spectroscopy spectrum imaging and image spectroscopy techniques. The sensitivity of the plasmon peak position and shape to various crystal structures and phases is exploited using postprocessing of spectra into second derivative plasmon maps and line scans. Analytical transmission electron microscopy is complemented by studies of the orientation relationship of the multilayer system using high-resolution electron microscopy of interfaces and selected area diffraction. The techniques have been applied to the Cu-Al multilayer sample and sharply bound epitaxial phases are found, before and after heat treatment.


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