Quasi-Fermi Energy and Steady-State Recombination Demarcation Level in a-Si:H

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Z. Liu

ABSTRACTA specially designed photoconductivity experiment directly shows that, above room temperature, the steady-state recombination lifetime of the free electrons in undoped amorphous silicon can be described by the free electron quasi-Fermi energy alone. The apparent discrepancy on recombination demarcation levels between the Rose model and the Simmons-Taylor model is resolved by including the effect of the occupation function. The significance of the free electron quasi-Fermi level is discussed.

1995 ◽  
Vol 377 ◽  
Author(s):  
M. Goerlitzer ◽  
P. Pipoz ◽  
H. Beck ◽  
N. Wyrsch ◽  
A. V. Shah

ABSTRACTTransient photoconductive response of undoped a-Si:H has been studied; the changes were analysed between two slightly different steady-state illumination conditions, at room temperature. A theoretical model is developed to describe transient photoconductivity; it yields good agreement with the measured curves for a whole range of light intensities. Numerical evaluations allows one to extract the recombination time of electrons. Comparison with steady-state photoconductivity yields a band mobility of free electrons between 0.1 and 6 cm2V−1s−1, depending upon sample quality.


In a previous investigation it was found that the unusually high value for the Wiedemann-Franz ratio of tellurium could be explained as being only a formal anomally. The amount of heat transferred by the bound atoms is the same in tellurium as in conducting metals; but, in tellurium, in contrast to good conductors, it is responsible for almost the entire heat conductivity because the heat transferred by the free electrons is especially small. This indicates that tellurium differs from true metals in that the density of free electrons is very small. Classical statistics is therefore applicable and the electrical conductivity is given by x = 4/3 e 2 ln (2 πmk T) -5/9 , (1) where n is the density of free (conduction) electrons and l is their mean free path. Taking the specific resistance of tellurium at room temperature as 0.3 ohm-cm and l as 5.2 X 10 -6 cm (Sommerfeld's value for silver, found by applying Fermi-Dirac statistics), n is 2.9 X 10 16 , or about one free electron per million tellurium atoms in contrast to good conductors in which there is approximately one free electron per atom. Even in the limiting case with l = 3.2 X 10 -3 cm (the distance between the tellurium atoms), n is 4.7 X 10 18 which is about one free electron for every 6000 tellurium atoms.


Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.


2021 ◽  
Vol 7 (11) ◽  
pp. eabe4270 ◽  
Author(s):  
A. Ben Hayun ◽  
O. Reinhardt ◽  
J. Nemirovsky ◽  
A. Karnieli ◽  
N. Rivera ◽  
...  

It is a long-standing goal to create light with unique quantum properties such as squeezing and entanglement. We propose the generation of quantum light using free-electron interactions, going beyond their already ubiquitous use in generating classical light. This concept is motivated by developments in electron microscopy, which recently demonstrated quantum free-electron interactions with light in photonic cavities. Such electron microscopes provide platforms for shaping quantum states of light through a judicious choice of the input light and electron states. Specifically, we show how electron energy combs implement photon displacement operations, creating displaced-Fock and displaced-squeezed states. We develop the theory for consecutive electron-cavity interactions with a common cavity and show how to generate any target Fock state. Looking forward, exploiting the degrees of freedom of electrons, light, and their interaction may achieve complete control over the quantum state of the generated light, leading to novel light statistics and correlations.


2003 ◽  
Vol 67 (2) ◽  
Author(s):  
G. De Ninno ◽  
C. Bruni ◽  
D. Nutarelli ◽  
D. Garzella ◽  
C. Thomas ◽  
...  

2017 ◽  
Vol 4 (5) ◽  
pp. 054307 ◽  
Author(s):  
Markus Kubin ◽  
Jan Kern ◽  
Sheraz Gul ◽  
Thomas Kroll ◽  
Ruchira Chatterjee ◽  
...  

2001 ◽  
Vol 56 (6-7) ◽  
pp. 452-458
Author(s):  
Irina Petkova ◽  
Apostolos J. Maroulis ◽  
Constantina Hadjiantoniou-Maroulis ◽  
Peter Nikolov

Abstract The objective of this report is to investigate the steady state and dynamic photophysical and photochemical properties of 1-(N,N-bisacyl)amino-4,5-diphenyl-1,2,3-triazoles in solvents of dif­ferent polarity at room temperature and in frozen matrix at 77 K. On the basis of the comparison of their UV absorption and luminescence spectra with those of 4,5-diphenyl-1,2,3-triazole and diben-zamide (model compounds), cleavage of the N-N bond in the title compounds after irradiation with polychrome UV light is proved.


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