Quasi-Fermi Energy and Steady-State Recombination Demarcation Level in a-Si:H
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ABSTRACTA specially designed photoconductivity experiment directly shows that, above room temperature, the steady-state recombination lifetime of the free electrons in undoped amorphous silicon can be described by the free electron quasi-Fermi energy alone. The apparent discrepancy on recombination demarcation levels between the Rose model and the Simmons-Taylor model is resolved by including the effect of the occupation function. The significance of the free electron quasi-Fermi level is discussed.
1935 ◽
Vol 148
(865)
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pp. 648-664
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1970 ◽
Vol 28
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pp. 544-545
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1998 ◽
Vol 10
(48)
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pp. 10815-10826
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