Analytical approach for transient photoconductivity in undoped a-Si:H

1995 ◽  
Vol 377 ◽  
Author(s):  
M. Goerlitzer ◽  
P. Pipoz ◽  
H. Beck ◽  
N. Wyrsch ◽  
A. V. Shah
Keyword(s):  
Steady State ◽  
Theoretical Model ◽  
Analytical Approach ◽  
Room Temperature ◽  
Free Electrons ◽  
Recombination Time ◽  
Sample Quality ◽  
Transient Photoconductivity ◽  
Light Intensities ◽  
Good Agreement

ABSTRACTTransient photoconductive response of undoped a-Si:H has been studied; the changes were analysed between two slightly different steady-state illumination conditions, at room temperature. A theoretical model is developed to describe transient photoconductivity; it yields good agreement with the measured curves for a whole range of light intensities. Numerical evaluations allows one to extract the recombination time of electrons. Comparison with steady-state photoconductivity yields a band mobility of free electrons between 0.1 and 6 cm2V−1s−1, depending upon sample quality.

Measurement of Fluid Flow Thickness Within a Rotating Cone

2015 ◽  
Vol 137 (6) ◽  
Author(s):  
Digby D. Symons ◽  
Arnaud F. M. Bizard
Keyword(s):  
Fluid Flow ◽  
Free Surface ◽  
Steady State ◽  
Theoretical Model ◽  
Laminar Flow ◽  
Internal Surface ◽  
Vertical Axis ◽  
Experimental Measurements ◽  
Rotating Cone ◽  
Good Agreement

This paper reports experimental measurements of film thickness for continuous fluid flow on the internal surface of a cone rotating about a vertical axis. Measurements were obtained via an optical method based on photographing the displacement of a grid projected onto the surface of the flow within the cone. Results are compared to analytical theory for axisymmetric, steady state, free-surface laminar flow of a Newtonian fluid in a spinning cone. The theory assumes that the flow is thin but takes account of gravity. The theoretical model is found to be in good agreement with the experimental results.

Quasi-Fermi Energy and Steady-State Recombination Demarcation Level in a-Si:H

1992 ◽  
Vol 258 ◽  
Author(s):  
J. Z. Liu
Keyword(s):  
Steady State ◽  
Fermi Energy ◽  
Free Electron ◽  
Room Temperature ◽  
Taylor Model ◽  
Apparent Discrepancy ◽  
Free Electrons ◽  
Recombination Lifetime ◽  
Quasi Fermi Level ◽  
The Rose

ABSTRACTA specially designed photoconductivity experiment directly shows that, above room temperature, the steady-state recombination lifetime of the free electrons in undoped amorphous silicon can be described by the free electron quasi-Fermi energy alone. The apparent discrepancy on recombination demarcation levels between the Rose model and the Simmons-Taylor model is resolved by including the effect of the occupation function. The significance of the free electron quasi-Fermi level is discussed.

scholarly journals Ionization and Attachment Coefficients in C4F7N Gas Measured by the Steady-State Townsend Method

2019 ◽  
Vol 9 (18) ◽  
pp. 3686 ◽  
Author(s):  
Zhaoyu Qin ◽  
Yunxiang Long ◽  
Zhenyu Shen ◽  
Cheng Chen ◽  
Liping Guo ◽  
...  
Keyword(s):  
Steady State ◽  
Electric Field ◽  
Electric Fields ◽  
Room Temperature ◽  
Ionization Coefficient ◽  
Ionization Coefficients ◽  
Insulation Performance ◽  
Attachment Coefficient ◽  
Good Agreement ◽  
Effective Ionization

The normalized Townsend first ionization coefficient α/N and normalized attachment coefficient η/N in pure C4F7N were measured by using the steady-state Townsend (SST) method for a range of reduced electric fields E/N from 750 to 1150 Td at room temperature (20 °C). Meanwhile, the effective ionization coefficients are obtained. All SST experimental results show good agreement with pulsed Townsend (PT) experiment results. Comparisons of the critical electric fields of C4F7N with SF6 and other alternative gases such as c-C4F8 and CF3I indicate that C4F7N has a better insulation performance with a much higher normalized critical electric field at 959.19 Td.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Dislocation structures around SiO2 Particles in aged Cu-Cr-SiO2

1978 ◽  
Vol 36 (1) ◽  
pp. 594-595
Author(s):  
N.J. Long ◽  
M.H. Loretto ◽  
C.H. Lloyd
Keyword(s):  
Flow Stress ◽  
Single Crystals ◽  
Room Temperature ◽  
Thin Foil ◽  
Age Hardening ◽  
Dispersion Strengthening ◽  
Accurate Picture ◽  
The Matrix ◽  
Very High ◽  
Good Agreement

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.

Defect Structure of MEV Si Implantation in GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
S.-Tong Lee ◽  
G. Braunstein ◽  
Samuel Chen
Keyword(s):  
Free Surface ◽  
Defect Structure ◽  
Room Temperature ◽  
Surface Region ◽  
Peak Position ◽  
Lattice Disorder ◽  
Depth Profiles ◽  
Trim Calculation ◽  
Good Agreement

ABSTRACTThe defect and atomic profiles for MeV implantation of Si in GaAs were investigated using He++ channeling, TEM, and SIMS. Doses of 1–10 × 1015Si/cm2 at 1–3 MeV were used. MeV implantation at room temperature rendered only a small amount of lattice disorder in GaAs. Upon annealing at 400°C for 1 h or 800°C for 30 a, we observed a ‘defect-free’ surface region (- 1 μ for 3 MeV implant). Below this region, extensive secondary defects were formed in a band which was 0.7 μ wide and centered at 2 μ for 3 MeV implant. These defects were mostly dislocations lying in the [111] plane. SIMS depth profiles of Si implants showed the Si peak to be very close to the peak position of the defects. The experimental profiles of Si were compared to the TRIM calculation; generally good agreement existed among the peak positions.

Doppler-Shifted Cyclotron Resonance in Thin Metal Films

1972 ◽  
Vol 50 (18) ◽  
pp. 2122-2137
Author(s):  
R. Turner ◽  
J. F. Cochran
Keyword(s):  
Magnetic Field ◽  
Metal Films ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Free Electrons ◽  
Fermi Surfaces ◽  
First Order ◽  
Simple Quantum ◽  
The Magnetic Field ◽  
Good Agreement

According to Van Gelder the microwave absorption by a thin metal film in the presence of a static magnetic field normal to the film contains a series of peaks as the magnetic field is varied. In the present paper it is argued that these peaks correspond to Doppler-shifted cyclotron resonances of the carriers in the metal due to the quantization of electron momenta normal to the plane of the film. A simple quantum calculation is presented for the case of free electrons where the film is thin enough that to first order the microwave fields within are determined only by the boundary conditions and Maxwell's equations. The quantum expression is in good agreement with the absorption calculated using semiclassical arguments which can be readily extended to more complicated Fermi surfaces.

Analysis of Thermal Variation of Length and Refractive Index of Lead Fluoride to Study its Optical Properties

1989 ◽  
Vol 172 ◽  
Author(s):  
T. S. Aurora ◽  
D. O. Pederson ◽  
S. M. Day
Keyword(s):  
Refractive Index ◽  
Room Temperature ◽  
Linear Thermal Expansion ◽  
Small Variation ◽  
Published Data ◽  
Thermal Variation ◽  
Lead Fluoride ◽  
Superionic Phase Transition ◽  
Lorenz Relation ◽  
Good Agreement

AbstractLinear thermal expansion and refractive index variation have been measured in lead fluoride with a laser interferometer as a function of temperature. Data has been analyzed using the Lorentz-Lorenz relation. Molecular polarizability, band gap, variation of refractive index with density, and strain-polarizability parameter have been studied as a function of temperature. They exhibit a small variation with temperature except near the superionic phase transition where the variation appears to be more pronounced. The results are in good agreement with the published data near room temperature.

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