A Particular Photo-CVD Apparatus for Hydrogenated Amorphous Silicon Deposition

1992 ◽  
Vol 258 ◽  
Author(s):  
C. Manfredotti ◽  
F. Fizzotti ◽  
C. Osenga ◽  
M. Boero ◽  
V. Rigato ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Deposition Chamber ◽  
Amorphous Thin Films ◽  
Lock Chamber ◽  
Hydrogenated Amorphous ◽  
Deposited Films

ABSTRACTA new PHOTO-CVD apparatus has been built in order to deposit a – Si : H films and other kinds of amorphous thin films by a technique which is both simple and versatile. This apparatus is composed of three chambers connected together: a load-lock chamber, a process chamber and a third chamber for in-situ analysis of deposited films. A peculiarity of the lamp, a dielectric discharge lamp which can work with noble gases like Xe or Kr, is that it can be completely dismounted without breaking the vacuum in order to clean the optical MgF2 window. By this method, the deposition chamber can be kept in very clean conditions. In this apparatus, we started to deposit a – SixC1−x: H of very good quality, taking their thickness into account. These films have been completely characterized by chemical (RBS, ERDA) and optical (PDS) methods. Their quality can be compared with quality of a – Si : H samples of the same thickness obtained by PECVD.

Electroless Deposition and Characterization of Pd Thin Films on Hydrogenated Amorphous Silicon

1990 ◽  
Vol 202 ◽  
Author(s):  
M. L. Chou ◽  
N. Manning ◽  
Haydn Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Amorphous Silicon ◽  
Metal Ion ◽  
Electroless Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Si Substrates ◽  
Hydrogenated Amorphous ◽  
Deposited Films ◽  
Citrate Bath

ABSTRACTElectroless palladium thin films have been successfully deposited on hydrogenated amorphous Si from a palladium-ammine bath. The d.c. magnetron reactive sputtered 18% hydrogenated amorphous silicon (a-Si:H) possessed a hydrogen passivated surface, using an activation step prior to the electroless deposition to obtain a film with good uniformity. The specially prepared hypophosphite-based dilute metal ion bath exhibited good stability at low operating temperatures of 35–50 °C. The morphology and microstructure of the Pd aggregates were characterized by scanning transmission electron microscopy (STEM) and energy dispersive x-ray spectroscopy (EDX), while the Pd aggregates and as-deposited films from the citrate and NH3/NH4Cl baths were examined by scanning electron microscopy (SEM). Marked differences in morphology and distribution of the Pd aggregates on activated a-Si:H and c-Si substrates were observed and discussed. The as-deposited films with higher coverage from the NH3/NH4Cl bath were typically more uniform and crack-free, while those from the citrate bath suffered from incorporated hydrogen, resulting in bare spots, microcracks and local a-Si film peeling. Auger Electron Spectroscopy (AES) revealed a higher amount of co-deposited phosphorus in NH3/NH4Cl bath films than citrate bath films.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

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