Lou Temperature Growth of Superconducting Ybaacu,07‐X Thin Films by Metalorganic Chemical Vapor Deposition

Thin YBa2Cu307‐xfilms were grown by thermal and plasma enhanced MOCVD, and the effects of growth teiperature on the film properties were studied. The crystal Iinity of the fills deteriorated with growth teiperature, so superconductity decreased with growth teiperature. Thin fills grown by therial MOCVD at 600°C, 650°C, 700°C and 750°C had zero‐resistivity at 10K, 71K, 83K and 84K, respectively. The growth teiperature for superconducting fids is decreased by plasia enhancement. Thin films grown by plasma enhanced MOCVD at 515°C and 580 °C had zero‐resistivity at 60K and 85K. The critical current density of fills grown by plasia enhanced MOCVD at 580°C was 105A/cm2 at 77K.