Optical Properties of ZrF4 Thin Film Formed by Vapour Phase Deposition

1991 ◽  
Vol 244 ◽  
Author(s):  
Takao Kono ◽  
Shinzo Morita ◽  
Toshio Goto ◽  
Akira Nishiwaki

ABSTRACTZirconium fluoride (ZrF4 ) thin films were formed by plasma CVD and evaporation for thin-film optical wave guide. In the case of plasma CVD, ZrF4 compound was actually observed to be synthesized from the vapour of Zr and CF4 gas according to. ESCA measurement, even if the film contained impurities. As for evaporation, transparent and amorphous film was obtained and optical transmission loss was measured by scattering detection method, and the loss was calculated to be 9.5 dB/cm. But when only ZrF4 was deposited, thin film was tarnished to be white because of adsorption of moisture. Therefore, simultaneous evaporation of ZrF4 and BaF2 was performed and the charastaristic was stabilized.

2009 ◽  
Vol 255 (7) ◽  
pp. 4271-4273 ◽  
Author(s):  
R.B. Patil ◽  
R.K. Puri ◽  
Vijaya Puri

1999 ◽  
Vol 597 ◽  
Author(s):  
Tao Liu ◽  
Robert J. Samuels

AbstractModal loss coefficients for a planar leaky wave-guide are obtained by two new methods. One is a numerical calculation combining optical thin film theory with optical wave-guide theory; another is an analytical derivation based on analogy to Beer's law. Considering the influence of the modal loss, a modified mode equation for the planar leaky wave-guide is obtained, which greatly increases the accuracy of the refractive index and thickness of the thin film in a planar leaky wave-guide coupler (prism I film I substrate).


2011 ◽  
Vol 18 ◽  
pp. 197-207
Author(s):  
Sandip V. Kamat ◽  
Sikandar H. Tamboli ◽  
Vijaya Puri ◽  
R. K. Puri ◽  
R. B. Patil ◽  
...  

2016 ◽  
Vol 2 (2) ◽  
pp. 175
Author(s):  
Ki-sung Kang ◽  
Dea-wha Soh

<p>For the investigation of optical modulator, the optical wave-guide was fabricated on x-cut LiNbO<sub>3</sub> substrate using proton exchange method with self-aligned electrode. The electrode pattern was designed using a self-aligned thin film electrode method. After proton exchange process, the wave-guide could be prepared by annealing process to control the width and depth of the optical wave-guide. The initial crossover state of the fabricated 1´2 optical switch was observed with controlling the annealing process variables and the structure of self-aligned thin film electrodes. As the results in the present work, the measured cross talk and minimum detectable switching voltage were obtained at the values of -29.5dB and 8.0V, respectively, with good merits.</p>


2006 ◽  
Vol 326-328 ◽  
pp. 689-692
Author(s):  
Seung Jae Moon

The thermal conductivity of amorphous silicon (a-Si) thin films is determined by using the non-intrusive, in-situ optical transmission measurement. The thermal conductivity of a-Si is a key parameter in understanding the mechanism of the recrystallization of polysilicon (p-Si) during the laser annealing process to fabricate the thin film transistors with uniform characteristics which are used as switches in the active matrix liquid crystal displays. Since it is well known that the physical properties are dependent on the process parameters of the thin film deposition process, the thermal conductivity should be measured. The temperature dependence of the film complex refractive index is determined by spectroscopic ellipsometry. A nanosecond KrF excimer laser at the wavelength of 248 nm is used to raise the temperature of the thin films without melting of the thin film. In-situ transmission signal is obtained during the heating process. The acquired transmission signal is fitted with predictions obtained by coupling conductive heat transfer with multi-layer thin film optics in the optical transmission measurement.


Author(s):  
Miki Niwa ◽  
Hirofumi Itoh ◽  
Satoshi Kato ◽  
Tadashi Hattori ◽  
Yuichi Murakami

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