Modification of H-mordenite by a vapour-phase deposition method

1982 ◽  
pp. 819 ◽  
Author(s):  
Miki Niwa ◽  
Hirofumi Itoh ◽  
Satoshi Kato ◽  
Tadashi Hattori ◽  
Yuichi Murakami
Keyword(s):  
Vapour Phase ◽  
Deposition Method ◽  
Vapour Phase Deposition

One-step vapour phase growth of two-dimensional formamidinium-based perovskite and its hot carrier dynamics

2020 ◽  
Vol 22 (37) ◽  
pp. 21512-21519
Author(s):  
Ufuk Erkılıç ◽  
Hyun Goo Ji ◽  
Eiji Nishibori ◽  
Hiroki Ago
Keyword(s):  
Vapour Deposition ◽  
Vapour Phase ◽  
Carrier Dynamics ◽  
Two Dimensional ◽  
Deposition Method ◽  
Phase Growth ◽  
Hot Carrier ◽  
One Step

Square-shaped layered FA2PbI4 perovskite crystals were prepared using a one-step vapour deposition method, and the hot carrier dynamics of these crystals was studied.

Introduction of Innovative Dopant Concentration Profiles to Broaden the Recombination Zone of Phosphorescent OVPD-Processed Organic Light Emitting Diodes

2009 ◽  
Vol 1154 ◽  
Author(s):  
Manuel Bösing ◽  
Christoph Zimmermann ◽  
Florian Lindla ◽  
Frank Jessen ◽  
Philipp van Gemmern ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Dopant Concentration ◽  
Vapour Phase ◽  
Concentration Profiles ◽  
High Luminance ◽  
Light Emitting ◽  
Organic Vapour ◽  
Theoretical Results ◽  
Vapour Phase Deposition ◽  
Recombination Zone

AbstractOLED with non-constant dopant concentration profiles have been processed by means of organic vapour phase deposition (OVPD) and were compared with regard to their luminous current efficiencies. Especially when driven at ultra-high luminance (>10,000 cd/A), OLED with a dopant concentration profile starting with a rather high dopant concentration on the anode side of the emissive layer showed improved luminous current efficiencies compared to their conventional counterparts.To further investigate this effect, the width and location of the recombination zone have been simulated for all investigated concentration profiles by numerical solution of the semiconductor device equations using experimentally determined doping-dependent charge carrier mobilities. The obtained theoretical results are discussed with regard to the accomplished experiments.

Vapour phase deposition and thermal decarbonylation of Re2(CO)10 on gamma-alumina: infrared studies

1995 ◽  
Vol 34 (1-2) ◽  
pp. 65-73 ◽  
Author(s):  
E. Escalona Platero ◽  
F. Ruiz de Peralta ◽  
C. Otero Areán
Keyword(s):  
Vapour Phase ◽  
Gamma Alumina ◽  
Infrared Studies ◽  
Thermal Decarbonylation ◽  
Vapour Phase Deposition

TfX2: A critical review of vapour phase deposition methods for ferroelectric thin films

1992 ◽  
Vol 133 (1) ◽  
pp. 3-3
Author(s):  
A I Kingon ◽  
A Auciollo ◽  
D Lichtenwalner ◽  
K Y Hsieh
Keyword(s):  
Thin Films ◽  
Critical Review ◽  
Vapour Phase ◽  
Ferroelectric Thin Films ◽  
Vapour Phase Deposition

Optical Properties of ZrF4 Thin Film Formed by Vapour Phase Deposition

1991 ◽  
Vol 244 ◽  
Author(s):  
Takao Kono ◽  
Shinzo Morita ◽  
Toshio Goto ◽  
Akira Nishiwaki
Keyword(s):  
Thin Film ◽  
Optical Transmission ◽  
Transmission Loss ◽  
Amorphous Film ◽  
Vapour Phase ◽  
Plasma Cvd ◽  
Optical Wave ◽  
Zirconium Fluoride ◽  
Optical Wave Guide ◽  
Vapour Phase Deposition

ABSTRACTZirconium fluoride (ZrF4 ) thin films were formed by plasma CVD and evaporation for thin-film optical wave guide. In the case of plasma CVD, ZrF4 compound was actually observed to be synthesized from the vapour of Zr and CF4 gas according to. ESCA measurement, even if the film contained impurities. As for evaporation, transparent and amorphous film was obtained and optical transmission loss was measured by scattering detection method, and the loss was calculated to be 9.5 dB/cm. But when only ZrF4 was deposited, thin film was tarnished to be white because of adsorption of moisture. Therefore, simultaneous evaporation of ZrF4 and BaF2 was performed and the charastaristic was stabilized.

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