Growth of Tetrahedral Phases of Boron Nitride thin Films by Reactive Sputtering

1992 ◽  
Vol 242 ◽  
Author(s):  
T.D. Moustakas ◽  
T. Lei ◽  
R. J. Molnar ◽  
C. Fountzoulas ◽  
E.J. Oles
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Reactive Sputtering ◽  
Xrd And Tem ◽  
Over Time

ABSTRACTTetrahedrally coordinated phases of boron nitride (c-BN and w-BN) were produced by reactive sputtering. The structure of the films was investigated by XRD and TEM diffraction, and found to be poly cry stalline. Films with microhardness up to 3500kg/mm2 were deposited but some degradation over time has been observed. A model for the stabilization of the tetrahedral phases over the graphitic one is proposed.

Chemical Vapor Deposition of Boron Nitride Thin Films on SiC

2015 ◽  
Vol 821-823 ◽  
pp. 990-994
Author(s):  
Mihail Chubarov ◽  
Henrik Pedersen ◽  
H. Högberg ◽  
Magnus Garbrecht ◽  
Zsolt Czigány ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Gas Phase ◽  
Recent Work ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electric Properties ◽  
Rhombohedral Boron ◽  
Xrd And Tem

We give here an overview of our recent work on growth of rhombohedral boron nitride (r-BN) thin films on SiC substrates by chemical vapor deposition (CVD). We demonstrate the growth of twinned r-BN on various SiC polytypes at 1500 °C, using H2as carrier gas and triethyl boron and ammonia as precursors with an N/B ratio of ~ 640. The epitaxial relation with various substrates is determined from XRD and TEM. Adding Si to the gas phase stabilizes the r-BN phase but does not alter the electric properties of the material which remains electrically insulating.

Cathodoluminescence of Praseodymium doped AlN, GaN and turbo static BN.

2004 ◽  
Vol 831 ◽  
Author(s):  
Muhammad Maqbool ◽  
H. H. Richardson ◽  
M. E. Kordesch
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Boron Nitride ◽  
Aluminum Nitride ◽  
Room Temperature ◽  
Reactive Sputtering ◽  
Visible Range ◽  
Rf Power

ABSTRACTPraseodymium (Pr) doped aluminum nitride (AlN), gallium nitride (GaN) and boron nitride (BN) thin films deposited on Si (111) substrate are studied with cathodoluminescence. AlN:Pr and GaN:Pr films are deposited at 77 K and room temperature respectively while BN:Pr films at 750 K by reactive sputtering, using 100–200 Watts RF power, 5–10 mTorr nitrogen. Metal targets of Al and B with Pr and a liquid target of Ga with solid Pr are used. The dominant peaks observed in the visible range result from 3P0 → 3H4, 3P1→ 3H5, and 3P0 → 3F2 transitions in AlN:Pr, 3P0 → 3H4, 3P0 → 3H6, and 3P0 → 3F2 transitions in GaN:Pr and from 3P0 → 3H4, 3P1→ 3H5, 3P0 → 3H6, and 3P0 → 3F2 transitions in BN:Pr. Additional peaks are observed from AlN:Pr at 335 nm and 385 nm from 1S0 → 1D2 and 1S0 → 1I6 which are not observed in GaN:Pr and BN:Pr films.

Boron nitride thin films synthesized by reactive sputtering

Vacuum ◽  
2000 ◽  
Vol 59 (2-3) ◽  
pp. 748-754 ◽  
Author(s):  
C Hu ◽  
S Kotake ◽  
Y Suzuki ◽  
M Senoo
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Reactive Sputtering

Preparation of CdS Thin Films by Reactive Sputtering Method

Shinku ◽  
1974 ◽  
Vol 17 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Hiroharu HIRABAYASHI ◽  
Minoru NOGAMI
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Cds Thin Films

Substrate bias effects during R-F sputtering of Y-Ba-Cu-O films

1990 ◽  
Vol 5 (4) ◽  
pp. 677-679 ◽  
Author(s):  
A. J. Drehman ◽  
M. W. Dumais
Keyword(s):  
Thin Films ◽  
Strontium Titanate ◽  
Reactive Sputtering ◽  
Negative Bias ◽  
Superconducting Thin Films ◽  
Substrate Bias ◽  
Composition Control ◽  
Zero Resistance

Y-Ba-Cu-O films were made by R-F diode sputtering using a single oxide target. It was found that if a small negative bias is applied to the substrate, the etching associated with reactive sputtering is significantly reduced. This results in better composition control and uniformity, which are quite important for the formation of superconducting thin films. Films deposited on strontium titanate, when annealed in oxygen, become superconducting with zero resistance at 89 K.

Characterization of the order-annealing response of nanostructured iron-palladium based ferromagnetic thin-films

2001 ◽  
Vol 703 ◽  
Author(s):  
Huiping Xu ◽  
Adam T. Wise ◽  
Timothy J. Klemmer ◽  
Jörg M. K. Wiezorek
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Room Temperature ◽  
Si Substrate ◽  
Ferromagnetic Thin Films ◽  
Precipitation Reactions ◽  
Post Deposition ◽  
Xrd And Tem ◽  
Iron Palladium

ABSTRACTA combination of XRD and TEM techniques have been used to characterize the response of room temperature magnetron sputtered Fe-Pd thin films on Si-susbtrates to post-deposition order-annealing at temperatures between 400-500°C. Deposition produced the disordered Fe-Pd phase with (111)-twinned grains approximately 18nm in size. Ordering occurred for annealing at 450°C and 500°C after 1.8ks, accompanied by grain growth (40-70nm). The ordered FePd grains contained (111)-twins rather than {101}-twins typical of bulk ordered FePd. The metallic overlayers and underlayers selected here produced detrimental dissolution (Pt into Fe-Pd phases) and precipitation reactions between Pd and the Si substrate.

scholarly journals Double flow reversal in thin liquid films driven by megahertz-order surface vibration

2014 ◽  
Vol 470 (2169) ◽  
pp. 20130765 ◽  
Author(s):  
Amgad R. Rezk ◽  
Ofer Manor ◽  
Leslie Y. Yeo ◽  
James R. Friend
Keyword(s):  
Thin Films ◽  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Intermolecular Forces ◽  
Liquid Films ◽  
Thin Liquid Films ◽  
Propagation Direction ◽  
Flow Reversal ◽  
Order Surface ◽  
Over Time

Arising from an interplay between capillary, acoustic and intermolecular forces, surface acoustic waves (SAWs) are observed to drive a unique and curious double flow reversal in the spreading of thin films. With a thickness at or less than the submicrometre viscous penetration depth, the film is seen to advance along the SAW propagation direction, and self-similarly over time t 1/4 in the inertial limit. At intermediate film thicknesses, beyond one-fourth the sound wavelength λ ℓ in the liquid, the spreading direction reverses, and the film propagates against the direction of the SAW propagation. The film reverses yet again, once its depth is further increased beyond one SAW wavelength. An unstable thickness region, between λ ℓ /8 and λ ℓ /4, exists from which regions of the film either rapidly grow in thickness to exceed λ ℓ /4 and move against the SAW propagation, consistent with the intermediate thickness films, whereas other regions decrease in thickness below λ ℓ /8 to conserve mass and move along the SAW propagation direction, consistent with the thin submicrometre films.

Evaluation of ion conductivity of ZrO2 thin films prepared by reactive sputtering in O2, H2O, and H2O+H2O2 mixed gas

2012 ◽  
Vol 520 (16) ◽  
pp. 5137-5140 ◽  
Author(s):  
Ning Li ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Kyung Ho Kim ◽  
Tsutomu Suzuki
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Ion Conductivity ◽  
Mixed Gas
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