Growth, Behavior, and Applications of Strained InGaAs/GaAs Multiple Quantum well Based Asymmetric Fabry-Perot Reflection Modulators

1991 ◽  
Vol 240 ◽  
Author(s):  
Kezhong Hu ◽  
Li Chen ◽  
A. Madhukar ◽  
P. Chen ◽  
Q. Xie ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Contrast Ratio ◽  
Optical Gain ◽  
Switching Behavior ◽  
Multiple Quantum ◽  
Monolithically Integrated ◽  
Photonic Switches ◽  
Bistable Switching ◽  
Fabry Perot

We report the realization of all-optical photonic switches using strained InGaAs/GaAs multiple quantum well based inverted cavity asymmetric Fabry-Perot reflection modulators monolithically integrated with GaAs/AlGaAs based heterojunction phototransistors. The photonic switches show both bistable and non-bistable switching behavior with a contrast ratio of 12:1 and optical gain of 2 to 4 dB. The design and growth considerations for such an integrated structure are also discussed.

HIGH-SPEED RESPONSE OF GaAs/AlGaAs MULTIPLE QUANTUM WELL (MQW) ASYMMETRIC FABRY PEROT (ASFP) REFLECTION MODULATOR

1993 ◽  
Vol 07 (08) ◽  
pp. 533-541
Author(s):  
M. NAWAZ ◽  
B. T. OLSEN ◽  
K. McILVANEY
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Contrast Ratio ◽  
Multiple Quantum ◽  
Driving Voltage ◽  
Operating Wavelength ◽  
Response Bandwidth ◽  
Fabry Perot ◽  
Speed Response

The results of the high-speed response of GaAs/AlGaAs multiple quantum well (MQW) based asymmetric Fabry Perot (ASFP) reflection modulator are presented. The measured 3 dB electrical frequency response bandwidth of the modulator was 600 MHz. The contrast ratio of the modulator was 8.9 dB for a driving voltage of 13 V, at an operating wavelength of 862 nm.

Analysis of mode-hopping effect in Fabry–Pérot multiple-quantum well laser diodes via low frequency noise investigation

2013 ◽  
Vol 79 ◽  
pp. 104-110 ◽  
Author(s):  
Sandra Pralgauskaitė ◽  
Vilius Palenskis ◽  
Jonas Matukas ◽  
Bronius Šaulys ◽  
Vladimir Kornijčuk ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Fabry Perot ◽  
Mode Hopping ◽  
Multiple Quantum Well Laser

Crystal orientation dependence of optical gain in InGaN/GaN multiple-quantum-well structures

2001 ◽  
Vol 79 (10) ◽  
pp. 1477-1479 ◽  
Author(s):  
Chii-Chang Chen ◽  
Kun-Long Hsieh ◽  
Jinn-Kong Sheu ◽  
Gou-Chung Chi ◽  
Ming-Juinn Jou ◽  
...  
Keyword(s):  
Quantum Well ◽  
Crystal Orientation ◽  
Multiple Quantum Well ◽  
Optical Gain ◽  
Orientation Dependence ◽  
Multiple Quantum ◽  
Quantum Well Structures
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