Multiple-quantum-well GaInAs/GaInAsP tapered broad-area amplifiers with monolithically integrated waveguide lens for high-power applications

1993 ◽  
Vol 5 (8) ◽  
pp. 916-919 ◽  
Author(s):  
F. Koyama ◽  
K.-Y. Liou ◽  
A.G. Dentai ◽  
T. Tanbun-ek ◽  
C.A. Burrus
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Broad Area ◽  
Monolithically Integrated

1.625-µm High-Power Strained Multiple Quantum Well Lasers for Optical Time-Domain Reflectometers

1996 ◽  
Author(s):  
Tsutomu Munakata ◽  
Yasumasa Kashima ◽  
Shigehiro Kusumoto ◽  
Akio Matoba ◽  
Hiroshi Takano
Keyword(s):  
Quantum Well ◽  
Time Domain ◽  
High Power ◽  
Multiple Quantum Well ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Time

120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure

1996 ◽  
Vol 35 (Part 2, No. 4B) ◽  
pp. L493-L495 ◽  
Author(s):  
Toru Takayama ◽  
Osamu Imafuji ◽  
Tadaro Hashimoto ◽  
Masaaki Yuri ◽  
Akio Yoshikawa ◽  
...  
Keyword(s):  
Refractive Index ◽  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Noise ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser ◽  
Real Refractive Index

Coherent high-power operation of InGaAsP/InGaAs multiple-quantum-well active-grating surface-emitting amplified lasers

1993 ◽  
Author(s):  
Nils W. Carlson ◽  
So K. Liew ◽  
Raymond J. Menna ◽  
Peter D. Gardner ◽  
James T. Andrews ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Power Operation ◽  
Power Operation

High power, 0.98 μm, Ga0.8In0.2As/GaAs/Ga0.51In0.49P multiple quantum well laser

1992 ◽  
Vol 72 (9) ◽  
pp. 4447-4448 ◽  
Author(s):  
K. Mobarhan ◽  
M. Razeghi ◽  
G. Marquebielle ◽  
E. Vassilaki
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

scholarly journals Optical Properties of Diffused AlGaAs/GaAs Multiple Quantum Wells and their Applications in high Power Laser

1996 ◽  
Vol 450 ◽  
Author(s):  
Yi Luo ◽  
Ai-Qing Jiang ◽  
Zhi-Biao Hao ◽  
Jian-Hua Wang ◽  
Terry W. K. Lai ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
High Power ◽  
Multiple Quantum Well ◽  
Thick Layer ◽  
Multiple Quantum ◽  
Practical Applications ◽  
High Power Output ◽  
Gaas Buffer Layer ◽  
Ridge Waveguide Laser

ABSTRACTWe will present results for an Al0.24Ga0.76As/GaAs diffused multiple quantum well with five periods of 100/100 Å thick well/barrier layers grown in between Al0.24Ga0.76As guiding layers and cladded on top by a 1 μm thick p-Al0.44Ga0.56As layer and on the bottom by an n-Al0.44Ga0.56As layer of equal thickness, on a n+-GaAs buffer layer and n+-GaAs substrate. Vacancy enhanced QW diffusion is employed where a 2000 Å thick layer of SiO2 is deposited on top of the diffused multiple quantum well structure. Photoluminescence measurement and photovoltage measurement at room temperature show that after rapid thermal annealing for 30 sec at 1000 °C to 1040 °C, a bandgap shift of 30 nm is obtained for the exciton edge. Further, this technique is applied to a ridge waveguide laser structure to make two windows for high power output up to 36 mW. This device shows that the diffusion process may have practical applications.

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