Growth of Au on A Ge (111) Surface

1991 ◽  
Vol 237 ◽  
Author(s):  
D. N. Dunn ◽  
P. Xu ◽  
L. D. Marks
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
High Temperatures ◽  
Room Temperature ◽  
Annealing Behavior ◽  
Temperature Growth ◽  
Au Thin Films

ABSTRACTWe investigate the room temperature growth of evaporated Au thin films on both clean and dirty single crystal Ge (111) substrates. The annealing behavior of these films was then examined under low and high temperatures.

Room-temperature growth of thin films of niobium on strontium titanate (0 0 1) single-crystal substrates for superconducting joints

2018 ◽  
Vol 444 ◽  
pp. 71-74 ◽  
Author(s):  
Yuhei Shimizu ◽  
Kazuhiko Tonooka ◽  
Yoshiyuki Yoshida ◽  
Mitsuho Furuse ◽  
Hiroshi Takashima
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Strontium Titanate ◽  
Room Temperature ◽  
Temperature Growth

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

Room-temperature growth of ZrO2 thin films using a novel hyperthermal oxygen-atom source

1999 ◽  
Vol 17 (1) ◽  
pp. 14-18 ◽  
Author(s):  
Elmar Wisotzki ◽  
Adam G. Balogh ◽  
Horst Hahn ◽  
John T. Wolan ◽  
Gar B. Hoflund
Keyword(s):  
Thin Films ◽  
Oxygen Atom ◽  
Room Temperature ◽  
Temperature Growth ◽  
Atom Source

Transport Studies in Single-Crystal Films of Cosi2 and Nisi2

1983 ◽  
Vol 25 ◽  
Author(s):  
J. C. Hensel ◽  
R. T. Tung ◽  
J. M. Poate ◽  
F. C. Unterwald ◽  
D. C. Jacobson
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Transport Studies ◽  
Single Crystal Films ◽  
Crystal Films ◽  
The Difference ◽  
Temperature Resistivity

ABSTRACTTransport studies have been performed on thin films of CoSi 2 and NiSis2 in the temperature range 1 to 300 K. The conductivities are metallic with essentially the same temperature dependence; however, the residual resistivities are markedly different even though the two silicides are structurally similar (the room temperature resistivity of NiSi2 being at least twice that of CoSi2 of 15 μΩ cm). The difference is attributed to intrinsic defects in NiSi2. This defect has been simulated by ion bombardment of the film where it is also shown that Matthiesen's rule is obeyed over a remarkable range of bombardment doses.

Heavy Doping of Li+-ion into NiO Epitaxial Thin Films via Unequilibrium Room-temperature Processing for New Functionalization

2009 ◽  
Vol 1214 ◽  
Author(s):  
Naoki Shiraishi ◽  
Yushi Kato ◽  
Hideki Arai ◽  
Nobuo Tsuchimine ◽  
Susumu Kobayashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperatures ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Rheed Pattern ◽  
Li Doping ◽  
Heavily Doped ◽  
Heavy Doping ◽  
Nio Films

AbstractNiO is a typical material for new p-type oxide semiconductors. Conductivity of NiO can be raised with Li+ doping. In case of Li-heavy doping, we can obtain LixNiO2(0.5< × <1.0). Recently the importance of LiNiO2 has been increased as an electrode material for rechargeable lithium cells.In this work, we tried to fabricate a novel NiO material with Li+-heavily doped by applying the pulsed laser-induced room temperature (R.T.) film process. Previously, we have succeeded in the epitaxial growth of various oxide thin films at R.T. such as Sn-doped In2O3 transparent electrodes [1]. Although the many studies have been made on the deposition of NiO epitaxial thin film at low temperatures [2], there are few reports on fabrication and the conductive characteristic for Li-heavily doped NiO epitaxial films. The film deposition at R.T., which is the unequilibrium vapor phase process, is expected to result in different crystal structure and characteristics from the films grown at high-temperatures.A composition-adjusted thin film of LixNi1-xO(0.10< × <0.40) was deposited on a sapphire (α-Al2O3)(0001) or MgO(100) substrates by pulsed laser deposition (PLD) technique in 10−6 Torr of oxygen at R.T. and the high temperatures of 350 and 515°C. Crystalline properties of thin films deposited at R.T. or high temperatures were examined using reflection high energy electron diffraction (RHEED) and X-ray diffraction. For the Li-heavily doped NiO films(x>0.30) grown at R.T., a clear streak RHEED pattern showing epitaxial growth was observed. But the Li-heavily doped NiO films grown at high temperatures, exhibited the ring RHEED pattern, which indicates the policrystal growth of films. Electric conductivity of various Li-doped NiO thin films deposited at R.T. or high temperatures on sapphire (0001) substrates were measured by two-probe method. The interesting results were obtained that conductivity of the film was increased remarkably with an increase of Li-doping for R.T. deposition, but was not changed so much regardless of Li-doping for high-temperature depositions.

scholarly journals Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method

2017 ◽  
Vol E100.C (2) ◽  
pp. 156-160 ◽  
Author(s):  
Eiji HIGURASHI ◽  
Ken OKUMURA ◽  
Yutaka KUNIMUNE ◽  
Tadatomo SUGA ◽  
Kei HAGIWARA
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ambient Air ◽  
Au Thin Films ◽  
Bonding Method
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