Room temperature ferroelectricity of tetragonally strained SrTiO3 thin films on single crystal Rh substrates

2012 ◽  
Vol 152 (14) ◽  
pp. 1256-1258 ◽  
Author(s):  
W.J. Maeng ◽  
I. Jung ◽  
J.Y. Son
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Room Temperature

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

Transport Studies in Single-Crystal Films of Cosi2 and Nisi2

1983 ◽  
Vol 25 ◽  
Author(s):  
J. C. Hensel ◽  
R. T. Tung ◽  
J. M. Poate ◽  
F. C. Unterwald ◽  
D. C. Jacobson
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Room Temperature ◽  
Room Temperature Resistivity ◽  
Transport Studies ◽  
Single Crystal Films ◽  
Crystal Films ◽  
The Difference ◽  
Temperature Resistivity

ABSTRACTTransport studies have been performed on thin films of CoSi 2 and NiSis2 in the temperature range 1 to 300 K. The conductivities are metallic with essentially the same temperature dependence; however, the residual resistivities are markedly different even though the two silicides are structurally similar (the room temperature resistivity of NiSi2 being at least twice that of CoSi2 of 15 μΩ cm). The difference is attributed to intrinsic defects in NiSi2. This defect has been simulated by ion bombardment of the film where it is also shown that Matthiesen's rule is obeyed over a remarkable range of bombardment doses.

Growth of Au on A Ge (111) Surface

1991 ◽  
Vol 237 ◽  
Author(s):  
D. N. Dunn ◽  
P. Xu ◽  
L. D. Marks
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
High Temperatures ◽  
Room Temperature ◽  
Annealing Behavior ◽  
Temperature Growth ◽  
Au Thin Films

ABSTRACTWe investigate the room temperature growth of evaporated Au thin films on both clean and dirty single crystal Ge (111) substrates. The annealing behavior of these films was then examined under low and high temperatures.

Charge Transport in Pentacene Thin Film Transistors

2001 ◽  
Vol 665 ◽  
Author(s):  
J. H. Schön ◽  
L. D. Buchholz ◽  
Ch. Kloc ◽  
B. Batlogg
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Single Crystal ◽  
Charge Transport ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Nanocrystalline Material ◽  
Hole Mobility ◽  
Grain Sizes

ABSTRACTThe charge transport properties in polycrystalline pentacene thin film transistors is investigated. A potential barrier is formed at grain boundaries due charged trapping states. The influence of such grain boundaries on the hole mobility of the devices is analyzed for different grain sizes, trap concentrations, and carrier densities. The results reveal that room temperature mobilities exceeding 0.5 cm2/Vs can be obtained in thin films with large grains as well as in nanocrystalline material. Consequently, single crystal device limits can be reached also by polycrystalline pentacene thin film transistors.

Room-temperature growth of thin films of niobium on strontium titanate (0 0 1) single-crystal substrates for superconducting joints

2018 ◽  
Vol 444 ◽  
pp. 71-74 ◽  
Author(s):  
Yuhei Shimizu ◽  
Kazuhiko Tonooka ◽  
Yoshiyuki Yoshida ◽  
Mitsuho Furuse ◽  
Hiroshi Takashima
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Strontium Titanate ◽  
Room Temperature ◽  
Temperature Growth

Investigation of ZnO Based Thin Films as Resistance Materials with Small Temperature Coefficients

2006 ◽  
Vol 45 ◽  
pp. 2376-2381
Author(s):  
Yuichi Sato ◽  
Makoto Goto ◽  
Junji Ikeda ◽  
Yusuke Minakawa ◽  
Susumu Sato
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Quartz Glass ◽  
Room Temperature ◽  
Small Temperature ◽  
Glass Substrates ◽  
Temperature Coefficients ◽  
Temperature Dependences

Possibilities of ZnO based thin films for applications as resistance materials with small temperature coefficients are investigated. The ZnO based thin films containing Cu, Mg, Al and In are deposited on sapphire c-face single crystal substrates or quartz glass substrates. Resistivities at room temperature and their temperature dependences of the obtained thin films are measured and discussed.

Room-temperature ferromagnetism in single crystal Fe1.7Ge thin films of high thermal stability grown on Ge(111)

2008 ◽  
Vol 93 (3) ◽  
pp. 033114 ◽  
Author(s):  
R. Jaafar ◽  
Y. Nehme ◽  
D. Berling ◽  
J. L. Bubendorff ◽  
A. Mehdaoui ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Single Crystal ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
High Thermal Stability

Laser-Induced Voltages at Room Temperature in YBa2Cu3O7 and PrxY1-xBa2Cu3O7 Thin Films

1995 ◽  
Vol 397 ◽  
Author(s):  
H.- U. Habermeier ◽  
N. Jisrawi ◽  
G. Jäger-Waldau ◽  
U. Sticher ◽  
B. Leibold
Keyword(s):  
Thin Films ◽  
Temperature Gradient ◽  
Single Crystal ◽  
Tilt Angle ◽  
Material Properties ◽  
Defect Structure ◽  
Room Temperature ◽  
Substrate Surface ◽  
Doping Dependence ◽  
Photon Fluence

ABSTRACTRecent reports on high transient transverse voltages at room temperature in YBa2Cu3O7 and PrxYl-xBa2Cu3O7 thin films grown on SrTiO3 single crystal substrates, with a tilt angle between the [ 001 ] cubic axis and the substrate surface plane, have been interpreted by thermoelectric fields transverse to a laser-induced temperature gradient which are caused by the non-zero off diagonal elements of the Seebeck tensor. We have studied this effect in epitaxially grown Pr- doped, as well as undoped YBa2Cu3O7, thin films and observed for a 2 mm long YBa2Cu3O7 strip exposed to a UV photon fluence of 100 mJ/cm2 signals as large as 30 V. The unexpected high values for the signals and their doping dependence are discussed within the frame of a model based on a thermopile arrangement, the growth induced defect structure and the doping induced modifications of the material properties.

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