Room temperature vacuum sealing using surfaced activated bonding with au thin films

2005 ◽  
Author(s):  
H. Okada ◽  
T. Itoh ◽  
J. Frome ◽  
T. Gessner ◽  
T. Saga
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum Sealing ◽  
Au Thin Films

scholarly journals Effect of Au Film Thickness and Surface Roughness on Room-Temperature Wafer Bonding and Wafer-Scale Vacuum Sealing by Au-Au Surface Activated Bonding

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 454 ◽  
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Microelectromechanical Systems ◽  
Wafer Level ◽  
Vacuum Sealing ◽  
Wafer Scale ◽  
Au Thin Films

Au-Au surface activated bonding (SAB) using ultrathin Au films is effective for room-temperature pressureless wafer bonding. This paper reports the effect of the film thickness (15–500 nm) and surface roughness (0.3–1.6 nm) on room-temperature pressureless wafer bonding and sealing. The root-mean-square surface roughness and grain size of sputtered Au thin films on Si and glass wafers increased with the film thickness. The bonded area was more than 85% of the total wafer area when the film thickness was 100 nm or less and decreased as the thickness increased. Room-temperature wafer-scale vacuum sealing was achieved when Au thin films with a thickness of 50 nm or less were used. These results suggest that Au-Au SAB using ultrathin Au films is useful in achieving room-temperature wafer-level hermetic and vacuum packaging of microelectromechanical systems and optoelectronic devices.

Growth of Au on A Ge (111) Surface

1991 ◽  
Vol 237 ◽  
Author(s):  
D. N. Dunn ◽  
P. Xu ◽  
L. D. Marks
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
High Temperatures ◽  
Room Temperature ◽  
Annealing Behavior ◽  
Temperature Growth ◽  
Au Thin Films

ABSTRACTWe investigate the room temperature growth of evaporated Au thin films on both clean and dirty single crystal Ge (111) substrates. The annealing behavior of these films was then examined under low and high temperatures.

scholarly journals Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method

2017 ◽  
Vol E100.C (2) ◽  
pp. 156-160 ◽  
Author(s):  
Eiji HIGURASHI ◽  
Ken OKUMURA ◽  
Yutaka KUNIMUNE ◽  
Tadatomo SUGA ◽  
Kei HAGIWARA
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ambient Air ◽  
Au Thin Films ◽  
Bonding Method

Room-Temperature Wafer Bonding Using Smooth Au Thin Films for Integrated Plasmonic Devices

2018 ◽  
Author(s):  
Michitaka Yamamoto ◽  
Takashi Matsumae ◽  
Yuichi Kurashima ◽  
Hideki Takagi ◽  
Tadatomo Suga ◽  
...  
Keyword(s):  
Thin Films ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Au Thin Films

Surface functionalization of PANI and PANI/ZnO hybrid nanofibers with metallic catalysts for ammonia sensing at room temperature

2019 ◽  
Vol 33 (16) ◽  
pp. 1950175 ◽  
Author(s):  
Azam Zoshki ◽  
Mohammad Bagher Rahmani ◽  
Fatemeh Masdarolomoor ◽  
Saeid Hessami Pilehrood
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Ammonia Gas ◽  
Glass Substrates ◽  
Ammonia Sensing ◽  
Metallic Catalyst ◽  
The Mean ◽  
Uv Visible ◽  
Au Thin Films ◽  
Sensing Characteristics

Four different sensor devices were fabricated using the deposition of gold and nickel on top of polyaniline and polyaniline/zinc oxide composite thin films on glass substrates. Prepared samples were characterized using field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy and UV-Visible spectroscopy. FESEM images confirmed the formation of interwoven nanofibers for all samples with the mean diameter of about 90 nm for PANI. The responses of the prepared samples toward various concentrations of ammonia gas were investigated by conductometric measurements at room temperature. The responses of the fabricated sensors toward 100 ppm of NH3 were obtained to be 112%, 3%, 177% and 148% for PANI/Au, PANI/Ni, PANI/ZnO/Au and PANI/ZnO/Ni samples, respectively. Results show both Ni and Au thin films as a metallic catalyst on top of PANI/ZnO nanocomposite can greatly improve the sensing characteristics toward NH3 at room temperature. However, PANI/ZnO/Au has the highest response with the lowest response time (4 s). The mechanism for the sensitivity enhancement of the fabricated devices was discussed.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

The observation of nano-voids in Au thin films

1987 ◽  
Vol 45 ◽  
pp. 366-367
Author(s):  
William Krakow
Keyword(s):  
Thin Films ◽  
Melting Point ◽  
Present Author ◽  
Stacking Faults ◽  
Damage Threshold ◽  
Ionic Species ◽  
Rare Gases ◽  
Chain Defects ◽  
Vacancy Chains ◽  
Au Thin Films

It has long been known that defects such as stacking faults and voids can be quenched from various alloyed metals heated to near their melting point. Today it is common practice to irradiate samples with various ionic species of rare gases which also form voids containing solidified phases of the same atomic species, e.g. ref. 3. Equivalently, electron irradiation has been used to produce damage events, e.g. ref. 4. Generally all of the above mentioned studies have relied on diffraction contrast to observe the defects produced down to a dimension of perhaps 10 to 20Å. Also all these studies have used ions or electrons which exceeded the damage threshold for knockon events. In the case of higher resolution studies the present author has identified vacancy and interstitial type chain defects in ion irradiated Si and was able to identify both di-interstitial and di-vacancy chains running through the foil.

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