Real-Time Studies of Interface Structural Dynamics

1991 ◽  
Vol 237 ◽  
Author(s):  
Walter P. Lowe ◽  
Roy Clarke

ABSTRACTWe present dynamic structural studies of thin films and their interface with underlying substrates using real-time x-ray diffraction. Using synchrotron light we have observed, in real-time, interface dynamics in semiconductor systems such as GexSi(i−x)/Si. The measurements show that under large temperature changes thin epitaxial layers may behave cooperatively to modify the overall strain profile. Dynamic behavior is exhibited in a series of discontinuities in the perpendicular lattice constant of the overlayer.

1995 ◽  
Vol 403 ◽  
Author(s):  
L. E. Depero ◽  
L. Sangaletti ◽  
M. Zocchi ◽  
G. A. Rizzi

AbstractIn the present contribution an X-ray diffraction (XRD) study of thin films in the Mo-Bi-O system is reported. The samples were grown by MOCVD on A12O3 substrates. Several thin films have been grown starting from a Mo:Bi ratio in the two metallorganic precursors ranging from 6:1 to 1:1, thus obtaining films constituted by MoO3 and Mo-Bi-O layers with different thicknesses. The effect of the underlying Mo-Bi-O layer on the preferred orientation of the MoO3 layer, which is found in the samples with a high Mo:Bi ratio in the precursors, is discussed. Moreover, an equation is proposed relating the percentage of the phase constituting the film, as given by the Rietveld leastsquares procedure, and the film thickness. Thus it is shown that the growth rate of the pure MoO3 film is much higher than that of the Mo-Bi-O oxide film. A tentative explanation can be given by considering a possible growth inhibiting action by Bi in this system.


2007 ◽  
Vol 1012 ◽  
Author(s):  
Stefan Jost ◽  
Frank Hergert ◽  
Rainer Hock ◽  
Michael Purwins

AbstractWe have investigated the formation of Cu(In,Ga)Se2 thin films by real-time X-ray diffraction (XRD) experiments while annealing differently deposited and composed stacked elemental layer (SEL) precursors.The in-situ measurements during the selenization of bi-layered Cu/In precursors reveal, that the semiconductor formation process is similar for precursors with thermally evaporated or sputtered indium. In both cases, the formation of binary copper and indium selenides is observed at temperatures around the melting point of selenium. After subsequent selenium transfer reactions, the chalcopyrite CuInSe2 is formed from the educt phases Cu2-xSe and InSe.The addition of gallium leads to the formation of the intermetallic precursor phase Cu9Ga4, which reduces the overall amount of copper and gallium selenides at process temperatures above 500 K. This causes an ongoing selenization in the indium selenium subsystem, which results in the formation of CuInSe2 from the educt phases Cu2-xSe and the selenium richest indium selenide g-In2Se3.


2008 ◽  
Vol 95 (1) ◽  
pp. 233-239 ◽  
Author(s):  
Stefan Kowarik ◽  
Alexander Gerlach ◽  
Stefan Sellner ◽  
Leide Cavalcanti ◽  
Oleg Konovalov ◽  
...  

Author(s):  
Haidan Wen ◽  
Pice Chen ◽  
Donald A. Walko ◽  
June H. Lee ◽  
Carolina Adamo ◽  
...  

2000 ◽  
Vol 15 (12) ◽  
pp. 2606-2611 ◽  
Author(s):  
Hsin-Yi Lee ◽  
K. S. Liang ◽  
Chih-Hao Lee ◽  
Tai-Bor Wu

Real-time x-ray reflectivity and diffraction measurements under in situ sputtering conditions were employed to study the growth behavior of LaNiO3 thin films on a Si substrate. Our results clearly show there is a transition layer of 60 Å, which grew in the first 6 min of deposition. The in situ x-ray-diffraction patterns indicated that this transition layer is amorphous. Subsequently, a polycrystalline overlayer grew as observed from the in situ x-ray reflectivity curves and diffraction patterns. Nucleation and growth took place on this transition layer with random orientation and then the polycrystalline columnar textures of (100) and (110) grew on the top of this random orientation layer. By comparing the integrated intensities of two Bragg peaks in the plane normal of x-ray diffraction, it was found that a crossover of the growth orientation from the ⟨110⟩ to the ⟨100ߩ direction occurred and the ability of (100) texturization enhanced with increasing film thickness beyond a certain critical value.


2018 ◽  
Vol 790 ◽  
pp. 43-47
Author(s):  
Masahiro Kanakubo ◽  
Kenta Miura ◽  
Keisuke Shimada ◽  
Ryosuke Fujii ◽  
Katsuya Noguchi ◽  
...  

We prepared ytterbium and silver co-doped tantalum-oxide (Ta2O5:Yb,Ag) thin films using a simple co-sputtering method and evaluated photoluminescence (PL) properties of the films after annealing. We found that a PL peak at a wavelength of 980 nm due to Yb3+ can be strongly enhanced by Ag doping. From X-ray diffraction measurements, we found that Ag2Ta8O21 and orthorhombic Ta2O5 crystalline phases are very important in order to enhance the 980-nm peak observed from our Ta2O5:Yb,Ag thin films. Because of the human-body transmittability of the 980-nm wavelength, such films are applicable to a novel real-time X-ray dosimeter system.


2015 ◽  
Vol 233-234 ◽  
pp. 666-669 ◽  
Author(s):  
Sergey Granovsky ◽  
Irina Gaidukova ◽  
Andrey Sokolov ◽  
Anton Devishvili ◽  
Vyacheslav Snegirev

We present the results of macroscopic measurements, X-ray diffraction and neutron reflectivity experiments on ≈ 25 nm thin films of Ni50Mn35In15 grown using Pulsed laser deposition technique on MgO single-crystalline substrate. Intrinsic magnetization of the film below Tc ≈ 290 K was confirmed. Structural measurements show the large temperature-dependent residual strain on the substrate with no indication of martensitic transition.


Author(s):  
James A. Lake

The understanding of ribosome structure has advanced considerably in the last several years. Biochemists have characterized the constituent proteins and rRNA's of ribosomes. Complete sequences have been determined for some ribosomal proteins and specific antibodies have been prepared against all E. coli small subunit proteins. In addition, a number of naturally occuring systems of three dimensional ribosome crystals which are suitable for structural studies have been observed in eukaryotes. Although the crystals are, in general, too small for X-ray diffraction, their size is ideal for electron microscopy.


Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.


2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.


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