Growth and Structural Studies of Thin Films in the Mo-Bi-O System

1995 ◽  
Vol 403 ◽  
Author(s):  
L. E. Depero ◽  
L. Sangaletti ◽  
M. Zocchi ◽  
G. A. Rizzi
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Oxide Film ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Present Contribution ◽  
X Ray ◽  
Xrd Study ◽  
Tentative Explanation ◽  
Growth Inhibiting

AbstractIn the present contribution an X-ray diffraction (XRD) study of thin films in the Mo-Bi-O system is reported. The samples were grown by MOCVD on A12O3 substrates. Several thin films have been grown starting from a Mo:Bi ratio in the two metallorganic precursors ranging from 6:1 to 1:1, thus obtaining films constituted by MoO3 and Mo-Bi-O layers with different thicknesses. The effect of the underlying Mo-Bi-O layer on the preferred orientation of the MoO3 layer, which is found in the samples with a high Mo:Bi ratio in the precursors, is discussed. Moreover, an equation is proposed relating the percentage of the phase constituting the film, as given by the Rietveld leastsquares procedure, and the film thickness. Thus it is shown that the growth rate of the pure MoO3 film is much higher than that of the Mo-Bi-O oxide film. A tentative explanation can be given by considering a possible growth inhibiting action by Bi in this system.

The influence of the growth rate on the preferred orientation of magnetron-sputtered Ti–Al–N thin films studied by in situ x-ray diffraction

2005 ◽  
Vol 98 (4) ◽  
pp. 044901 ◽  
Author(s):  
M. Beckers ◽  
N. Schell ◽  
R. M. S. Martins ◽  
A. Mücklich ◽  
W. Möller
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Preferred Orientation ◽  
X Ray Diffraction ◽  
X Ray

Real-Time Studies of Interface Structural Dynamics

1991 ◽  
Vol 237 ◽  
Author(s):  
Walter P. Lowe ◽  
Roy Clarke
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Dynamic Behavior ◽  
Structural Dynamics ◽  
Large Temperature ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Temperature Changes ◽  
X Ray ◽  
Synchrotron Light

ABSTRACTWe present dynamic structural studies of thin films and their interface with underlying substrates using real-time x-ray diffraction. Using synchrotron light we have observed, in real-time, interface dynamics in semiconductor systems such as GexSi(i−x)/Si. The measurements show that under large temperature changes thin epitaxial layers may behave cooperatively to modify the overall strain profile. Dynamic behavior is exhibited in a series of discontinuities in the perpendicular lattice constant of the overlayer.

Ribosome Structural Organization

1974 ◽  
Vol 32 ◽  
pp. 332-333
Author(s):  
James A. Lake
Keyword(s):  
Ribosomal Proteins ◽  
Structural Organization ◽  
Three Dimensional ◽  
Small Subunit ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Specific Antibodies ◽  
X Ray ◽  
E Coli ◽  
Complete Sequences

The understanding of ribosome structure has advanced considerably in the last several years. Biochemists have characterized the constituent proteins and rRNA's of ribosomes. Complete sequences have been determined for some ribosomal proteins and specific antibodies have been prepared against all E. coli small subunit proteins. In addition, a number of naturally occuring systems of three dimensional ribosome crystals which are suitable for structural studies have been observed in eukaryotes. Although the crystals are, in general, too small for X-ray diffraction, their size is ideal for electron microscopy.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

X-ray diffraction and Raman investigations of thickness dependent stress effects on Pb(ZrxTi1−x)O3 thin films

2006 ◽  
Vol 88 (25) ◽  
pp. 252901 ◽  
Author(s):  
Jyrki Lappalainen ◽  
Vilho Lantto ◽  
Johannes Frantti ◽  
Jussi Hiltunen
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stress Effects
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