In situ monitoring and characterization of SiC interface formed in carbon films grown by pulsed laser deposition

1997 ◽  
Vol 15 (5) ◽  
pp. 2585-2591 ◽  
Author(s):  
E. C. Samano ◽  
G. Soto ◽  
J. Valenzuela ◽  
L. Cota
2021 ◽  
Vol 130 (8) ◽  
pp. 085301
Author(s):  
M. Novotný ◽  
P. Fitl ◽  
S. A. Irimiciuc ◽  
J. Bulíř ◽  
J. More-Chevalier ◽  
...  

1991 ◽  
Vol 235 ◽  
Author(s):  
J. A. Knapp

ABSTRACTA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.


1991 ◽  
Vol 236 ◽  
Author(s):  
J. A. Knapp

AbstractA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.


1998 ◽  
Author(s):  
Dave H. A. Blank ◽  
Gertjan Koster ◽  
Guus J. H. M. Rijnders ◽  
Horst Rogalla

1998 ◽  
Author(s):  
M.P. Siegal ◽  
D.R. Tallant ◽  
J.C. Barbour ◽  
P.N. Provencio ◽  
L.J. Martinez-Miranda ◽  
...  

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