Amorphous Phase Formation and Recrystallization in Ion-Implanted Silicides
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ABSTRACTIon implantation induced phase transformations and recrystallization during post-annealing in CoSi2, CrSi2, and Pd2Si are studied. All three silicides are found to reorder at about 1/3 the melting point of the silicide. We speculate that ion-implanted silicides recrystallize by the same mechanism and that amorphous phases produced by implantation are unstable rather than metastable.
1987 ◽
Vol 19-20
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pp. 566-570
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2007 ◽
Vol 257
(1-2)
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pp. 344-347
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1987 ◽
Vol 90
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pp. 81-89
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1989 ◽
Vol 8
(12)
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pp. 1393-1394
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