Crystal Structure and Magnetic Properties of Co-Based Alloy Thin Film Prepared on Cr Underlayer With Good Crystallite Orientation

1991 ◽  
Vol 232 ◽  
Author(s):  
T. Kawanabe ◽  
J. G. Park ◽  
M. Naoe
Keyword(s):  
Thin Film ◽  
Crystal Orientation ◽  
Flat Surface ◽  
Film Plane ◽  
Recording Media ◽  
Alloy Thin Film ◽  
Crystallite Orientation ◽  
Axis Orientation ◽  
Glass Substrates ◽  
High Density Recording

ABSTRACTCo85Cr15-xTax(x:0, 2at%)/Cr films with microscopically flat surface were investigated for high density recording media. These films were deposited on silicon wafer and glass substrates at the substrate temperature Ts of 350 °C at argon pressure as low as sub-mTorr by using Facing Targets Sputtering (FTS) apparatus. The elevating of Ts promoted the Cr(200) orientation in film plane, leading to the in-plane c-axis orientation of Co crystallites. Addition of some elements such as Si, Ge and Ta in Cr thin film was found to stabilize Cr(110) crystal orientation even at Ts of 300 °C.

Improvement of crystallographic characteristics of CoCrTa thin film using double underlayer

2001 ◽  
Vol 674 ◽  
Author(s):  
Y.J. Kim ◽  
S.H. Kong ◽  
S. Nakagawa ◽  
M. Naoe ◽  
K.H. Kim
Keyword(s):  
Thin Film ◽  
Magnetic Recording ◽  
Magnetic Layer ◽  
Recording Media ◽  
Interlayer Thickness ◽  
Magnetic Recording Media ◽  
Axis Orientation ◽  
Perpendicular Magnetic Recording ◽  
High Density Recording ◽  
Crystallographic Characteristics

ABSTRACTHigh c-axis oriented CoCr-based thin films are expected for ultra-high density recording media in perpendicular magnetic recording system. In order to improve dispersion angle of c-axis of CoCr-based for perpendicular magnetic recording media, we prepared trilayered film with double underlayer using New Facing Targets Sputtering apparatus. The thickness of magnetic layer CoCrTa and double underlayer, such as interlayer Pt, paramagnetic CoCr, underlayer Ti was fixed 50nm and 20nm respectively. In order to prepare the thin film, we fixed argon gas pressure 1mTorr, substrate temperature 250°C and input current 0.5A. The crystallographic characteristics of CoCrTa layer with varying interlayer thickness (0- 20nm) have been investigated. By the result, the CoCrTa trilayered thin film with interlayer Pt showed good c-axis orientation 3.45° and 3.62° at thickness 5nm and 10nm respectively. However, CoCrTa thin film using interlayer paramagnetic CoCr showed 8.28° and 8.62° at thickness 5nm and 10nm respectively.

Structural Properties of Anisotropic PtCo(001) and PtFe(001) Thin Films on MgO(001)

1993 ◽  
Vol 311 ◽  
Author(s):  
Bruce M. Lairson ◽  
Mark R. Visokay ◽  
Sean B. Brennan ◽  
Robert Sinclair ◽  
Bruce M. Clemens
Keyword(s):  
Structural Properties ◽  
Perpendicular Magnetic Anisotropy ◽  
Film Plane ◽  
Recording Media ◽  
Magnetic Recording Media ◽  
Axis Orientation ◽  
Superlattice Structure ◽  
Natural Superlattice ◽  
Epitaxial Multilayers ◽  
Magneto Optic

ABSTRACTWe report structural properties of PtFe and PtCo intermetallic compounds with perpendicular magnetic anisotropy and a preferred c-axis orientation perpendicular to the film plane, formed from initially epitaxial multilayers. These materials represent particular cases of a more general class of anisotropic magnetic compounds with the CuAu(1) natural superlattice structure. They possess high magneto-optic Kerr rotations and magnetizations, suggesting them as likely candidates for magneto-optic and perpendicular magnetic recording media.

Submicron Conductor Array Fabricated from a Recrystallized Eutectic Thin Film

1982 ◽  
Vol 13 ◽  
Author(s):  
H. E. Cline
Keyword(s):  
Thin Film ◽  
Eutectic Alloy ◽  
Solidification Rate ◽  
Eutectic Structure ◽  
Alloy Thin Film ◽  
Directionally Solidified ◽  
Two Phase ◽  
Glass Substrates ◽  
Solid Liquid Interface ◽  
Solid Liquid

ABSTRACTA submicron conductor array was fabricated without using lithography by selectively etching a recrystallized A1-A12Cu eutectic alloy thin film. The 2 micron thick eutectic films were deposited on glass substrates and directionally solidified with both a quartz-iodine lamp and a scanning laser at rates between .0016 and .14 cm/sec. The resulting structure consisted of alternate parallel stripes of the two eutectic phases with a spacing between .5 and 4 microns that was controlled by the solidification rate. An array of submicron Al- rich conductors was fabricated by selectively etching away the Al2 Cu phase. At solidification rates greater than .004 cm/sec using the lamp heater the solid-liquid interface became non-planar while with the laser the structure was well alligned at the highest rates used, .14 cm/sec. At the maximum theoretical solidification rate that produces a two phase aligned eutectic structure the width of the Al wires would be 100A.

Control of crystallization and crystal orientation of alkoxy-derived SrBi2Ta2O9 thin films by ultraviolet irradiation

2003 ◽  
Vol 18 (4) ◽  
pp. 899-907 ◽  
Author(s):  
Kaori Nishizawa ◽  
Takeshi Miki ◽  
Kazuyuki Suzuki ◽  
Kazumi Kato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ultraviolet Irradiation ◽  
Crystal Orientation ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ultrahigh Pressure ◽  
Mercury Lamp ◽  
Axis Orientation ◽  
Coercive Electric Field

A 650 °C annealed thin film was found to be a single phase of SrBi2Ta2O9 (SBT) and showed the c-axis orientation without ultraviolet irradiation. The crystallinity and crystal orientation of the thin films were improved by ultraviolet irradiation using an ultrahigh-pressure mercury lamp (UHPML) or a low-pressure mercury lamp (LPML) under three conditions. In particular, the crystal orientation of the 650 °C annealed thin films dramatically changed by ultraviolet irradiation using a LPML at room temperature or using an UHPML at 150 °C. The 650 °C annealed SBT thin film prepared by ultraviolet irradiation using an UHPML at 150 °C showed a remanent polarization (Pr) of 4.3 μC/cm2 and a coercive electric field (Ec) of 101 kV/cm at 10 V.

scholarly journals Effect of Annealing on the Structural, Magnetic, Surface Energy and Optical Properties of Co32Fe30W38 Films Deposited by Direct-Current Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1028
Author(s):  
Wen-Jen Liu ◽  
Yung-Huang Chang ◽  
Sin-Liang Ou ◽  
Yuan-Tsung Chen ◽  
Wei-Hsuan Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Surface Energy ◽  
Low Frequency ◽  
Amorphous Structure ◽  
Magnetic Surface ◽  
Contact Angles ◽  
Alloy Thin Film ◽  
Glass Substrates

In this study, a 10–50 nm Co32Fe30W38 alloy thin film sputtered on glass substrates was annealed at different temperatures for 1 h including room temperature (RT), 300, 350, and 400 °C. The structure, magnetic properties, surface energy, and optical properties of the Co32Fe30W38 alloy were studied. X-ray diffraction (XRD) patterns of the as-deposited Co32Fe30W38 thin films showed the amorphous structure. The apparent body-centered cubic (BCC) CoFe (110) structure was exhibited after 300 °C annealing for 1 h. The 300 °C annealed Co32Fe30W38 thin film showed the highest CoFe (110) peak compared with other temperatures. Furthermore, the thicker the Co32Fe30W38 thin film, the higher the CoFe (110) peak. The CoFe (110) peak revealed magneto-crystalline anisotropy, which was related to the strong low-frequency alternative-current magnetic susceptibility (χac) and induced an increasing trend of saturation magnetization (Ms) as the thickness (tf) increased. Due to the thermal disturbance, the χac and Ms for the 350 and 400 °C annealed Co32Fe30W38 thin film decreased. The contact angles of the Co32Fe30W38 thin films were less than 90°. For all temperatures, the surface energy increased when the film thickness increased from 10 to 50 nm. In addition, the surface energies for annealed samples were comparatively higher than the as-deposited samples. The higher surface energy of 28 mJ/mm2 was obtained for the 50 nm Co32Fe30W38 thin film annealed at 300 °C. The transmittance percentage (%) of the as-deposited Co32Fe30W38 film was higher than other annealed conditions. This result contributed to the fact that higher crystallization, due to perfect band structures, may inhibit the transmission of photon signals through the film, resulting in low transmittance and high absorption.

scholarly journals Alignment of c-Axis Orientation Perpendicular to the Substrate Surface in FePt Alloy Thin Film with L10 Structure

2015 ◽  
Vol 39 (5) ◽  
pp. 167-176 ◽  
Author(s):  
Mitsuru Ohtake ◽  
Akira Itabashi ◽  
Masaaki Futamoto ◽  
Fumiyoshi Kirino ◽  
Nobuyuki Inaba
Keyword(s):  
Thin Film ◽  
Substrate Surface ◽  
Alloy Thin Film ◽  
Axis Orientation ◽  
Fept Alloy
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