Magnetic and Structural Characteristics of Multi-layered Films Composed of Fe and Si Ultra-thin Layers

MRS Proceedings ◽

10.1557/proc-231-367 ◽

1991 ◽

Vol 231 ◽

Author(s):

K. Kubota ◽

M. Nagakubo ◽

M. Naoe

Keyword(s):

Structural Characteristics ◽

Ion Beam ◽

Thin Layers ◽

Soft Magnetic Properties ◽

Ion Beam Sputtering ◽

Soft Magnetic ◽

Magnetostatic Interaction ◽

Beam Sputtering ◽

Amorphous Si ◽

The Relationship

AbstractFe and Si layers were deposited alternately by using ion beam sputtering apparatus and the relationship between crystal structure and soft magnetic properties of these multi-layered films have been investigated in detail. The clear periodicity of multi-layered films was confirmed even at the thicknesses of Fe and Si layers δFe and δSi as small as 8.5 Å.The saturation magnetization 4πMs for all Fe layers decreased with decrease of δFe and δSi, and the coercivity Hc of these films took minimum of 1.0 Oe at δFe of 8.5 Å.Such a significant decrease of 4TEMs may be attributed to the formation of nonmagnetic regions at both side of each Fe layers. The thickness of these nonmagnetic regions may be estimated at approximately 1.5 Å from the measured value of 4flMs. This thickness seems to be very small because it is almost equal to that of one monolayer of bcc α-Fe. The low Hc of the films with δFe and δSi of 8.5 Å may be due to the formation of ultra-fine crystallites in Fe layer by insertion of amorphous Si layer and the direct magnetostatic interaction among Fe layers.

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Cutoff Frequency Study on Nanocrystalline FeNbB Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.465.72 ◽

2012 ◽

Vol 465 ◽

pp. 72-75

Author(s):

Xiao Long Jiang ◽

Y.J. Yao ◽

M. Lai ◽

K. Peng ◽

Y.W. Du

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Room Temperature ◽

Ion Beam ◽

Cutoff Frequency ◽

Magnetic Behavior ◽

Soft Magnetic Properties ◽

Ion Beam Sputtering ◽

Soft Magnetic ◽

Beam Sputtering

A series of nanocrystalline FeNbB films were fabricated using ion-beam sputtering technique from FeNbB target. Pieces of these films were annealed for 1 hour at various temperatures up to 5730C. Room temperature soft magnetic properties of these films were measured. The influence of microstructure on magnetic behavior in nanocrystalline FeNbB films is investigated in a series of specimens with different film’s thickness. For the sample 120nm and 5000C annealed, cutoff frequency was found to be 5E7 Hz, which has the μf0=5E10.

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In Situ Deformation Studies of Fe/Al and Fe/Si Multi-Layered Films Prepared by Ion Beam Sputtering

MRS Proceedings ◽

10.1557/proc-239-487 ◽

1991 ◽

Vol 239 ◽

Author(s):

K. Kubota ◽

M. Naoe

Keyword(s):

Magnetic Properties ◽

Internal Stress ◽

Ion Beam ◽

Soft Magnetic Properties ◽

Ion Beam Sputtering ◽

Soft Magnetic ◽

Beam Sputtering ◽

In Situ Deformation ◽

Deformation Measurements

ABSTRACTIn situ deformation measurements of Fe/Al and Fe/Si multi-layered films on thin substrates were made by detecting the curvature of substrates during deposition. The deformation inside of Fe layers corresponding to the compressive and tensile stresses was detected for the Fe/Al and Fe/Si multi-layered films, respectively. For the Fe/Si multi-layered films, the internal stress in Fe layers became from tensile to compressive during deposition under bombardment of Ar Jons. These stresses in Fe layer were closely related to the soft magnetic properties of these multi-layered films. In situ deformation studies may be useful to make sure the effect of internal stress on the magnetic properties of these multi-layered films.

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PbTiO3 Films Deposited by an Alternating Dual-Target Ion Beam Sputtering Technique

MRS Proceedings ◽

10.1557/proc-243-185 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 1

Author(s):

B.E. Cole ◽

R.D. Horning ◽

P.W. Kruse

Keyword(s):

Structural Characteristics ◽

Ion Beam ◽

Pyroelectric Coefficient ◽

Dielectric Constants ◽

Thin Layers ◽

Ion Beam Sputtering ◽

X Ray Diffraction ◽

Si Substrates ◽

Beam Sputtering ◽

Dual Target

AbstractThin films, 0.2 μm to 2 μm thick, of ferroelectric PbTiO3 have been deposit ed on Pt coated Si wafers using a novel dual target ion beam sputtering technique. The sputtering targets of PbO and Ti are shuttled back and forth into a Xe ion beam, depositing very thin (10 - 15 Å) alternating layers of PbO and TiO2. The substrate is heated in situ, allowing interdiffusion of the thin layers into a homogeneous PbTiO3 film. Film composition can be controlled accurately and repeatably by controlling the ratio of the sputtering times from each target. Structural characteristics were analyzed by x-ray diffraction, Rutherford backscattering as a function of the sputtering time ratio and the deposition temperature on Pt and Si3N4 coated Si substrates. The stoichiometric PbTiO3 films have a tetragonal perovskite structure with a slight c-axis preference. Capacitor structures show ferroelectric hysterisis loops, dielectric constants of 100-250, loss tangents between 0.002 and 0.04 and a pyroelectric coefficient greater than 5 x 10−8 C/cm2 °C.

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Deposition of rust proof Iron thin films with soft magnetic properties by dual ion beam sputtering

IEEE Transactions on Magnetics ◽

10.1109/tmag.1985.1064106 ◽

1985 ◽

Vol 21 (5) ◽

pp. 1900-1902 ◽

Cited By ~ 50

Author(s):

M. Naoe ◽

M. Yamaga ◽

N. Terada

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Ion Beam ◽

Soft Magnetic Properties ◽

Ion Beam Sputtering ◽

Soft Magnetic ◽

Beam Sputtering ◽

Dual Ion Beam Sputtering

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Preparation of Iron Films by Dual Ion Beam Sputtering and Their Soft Magnetic Properties

IEEE Translation Journal on Magnetics in Japan ◽

10.1109/tjmj.1987.4549584 ◽

1987 ◽

Vol 2 (8) ◽

pp. 720-722

Author(s):

A. Kawano ◽

N. Kitamura ◽

M. Naoe

Keyword(s):

Magnetic Properties ◽

Ion Beam ◽

Soft Magnetic Properties ◽

Ion Beam Sputtering ◽

Soft Magnetic ◽

Iron Films ◽

Beam Sputtering ◽

Dual Ion Beam Sputtering

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Magnetic Properties of Nanocomposites Metal-Carbon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.233-234.538 ◽

2015 ◽

Vol 233-234 ◽

pp. 538-541

Author(s):

Alexander Aleshnikov ◽

Haider S. Mohammed Al-Azzawi ◽

Y. Kalinin ◽

Alexander Sitnikov ◽

Oksana Tarasova

Keyword(s):

Heat Treatment ◽

Magnetic Properties ◽

Ion Beam ◽

Heterogeneous Systems ◽

Soft Magnetic Properties ◽

Ion Beam Sputtering ◽

Ferromagnetic Alloy ◽

Soft Magnetic ◽

Before And After ◽

Beam Sputtering

The films of heterogeneous systems based on ferromagnetic alloy and С were obtained by ion-beam sputtering. The concentration dependence of the resistance of composites was measured before and after heat treatment. The research of magnetostatic and magnetodynamic properties of heterogeneous metal-carbon showed that compounds (Co)Х(C)100-Х (Co40Fe40B20)Х(С)100-Х (Co45Fe45Zr10)Х(C)100-Х after the percolation threshold have good soft magnetic properties.

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MODULATION WAVELENGTH DEPENDENCE OF THE INTERDIFFUSION IN AMORPHOUS Si/Ge MULTILAYER FILMS

MRS Proceedings ◽

10.1557/proc-56-383 ◽

1985 ◽

Vol 56 ◽

Cited By ~ 3

Author(s):

S.M. PROKES ◽

F. SPAEPEN

Keyword(s):

Ion Beam ◽

Wavelength Dependence ◽

Dangling Bond ◽

Ion Beam Sputtering ◽

X Ray ◽

Beam Sputtering ◽

Amorphous Si ◽

Effect Of Copper ◽

Oxygen Impurities ◽

Modulation Wavelength

AbstractCompositionally modulated amorphous Si/Ge thin films with repeat lengths (wavelengths) between 4.8 nm and 5.83 nm have been prepared using ion beam sputtering. The interdiffusion coefficient was determined from the decrease in the (000) x-ray satellite intensities with annealing, and was found to be relatively large, so that it could easily be measured without crystallization occurring. The effect of copper and oxygen impurities was found to be negligible. The dependence of the interdiffusivity on the modulation wavelength is similar to that of an ordering system. The temperature and wavelength dependence in the range T = 550-630 K is described by Dλ = 1.47×10−10 m.s−1 exp(-l.6 eV/kT)(l-21.8/λ2(nm)). It is suggested that diffusion is governed by the breaking of one bond near a pre-existing dangling bond.

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Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering

Japanese Journal of Applied Physics ◽

10.1143/jjap.18.1395 ◽

1979 ◽

Vol 18 (7) ◽

pp. 1395-1396 ◽

Cited By ~ 2

Author(s):

Kiyoshi Ishii ◽

Masahiko Naoe ◽

Shun'ichi Yamanaka ◽

Shuichi Okano ◽

Masakuni Suzuki

Keyword(s):

Electrical Properties ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Amorphous Si

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The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers

MRS Proceedings ◽

10.1557/proc-74-493 ◽

1986 ◽

Vol 74 ◽

Cited By ~ 3

Author(s):

B. Park ◽

F. Spaepen ◽

J. M. Poate ◽

D. C. Jacobson

Keyword(s):

Ion Beam ◽

Ion Beam Sputtering ◽

X Ray Diffraction ◽

Average Composition ◽

X Ray ◽

Composition Modulation ◽

Beam Sputtering ◽

Mixing Distance ◽

Diffraction Peaks ◽

Amorphous Si

AbstractArtificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.

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