Magnetic and structural characteristics of Fe/Al multilayers deposited by ion beam sputtering with Kr

1993 ◽  
Vol 73 (10) ◽  
pp. 6444-6446 ◽  
Author(s):  
T. Hamaguchi ◽  
H. Aida ◽  
S. Nakagawa ◽  
M. Naoe
Keyword(s):  
Structural Characteristics ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Magnetic and Structural Characteristics of Multi-layered Films Composed of Fe and Si Ultra-thin Layers

1991 ◽  
Vol 231 ◽  
Author(s):  
K. Kubota ◽  
M. Nagakubo ◽  
M. Naoe
Keyword(s):  
Structural Characteristics ◽  
Ion Beam ◽  
Thin Layers ◽  
Soft Magnetic Properties ◽  
Ion Beam Sputtering ◽  
Soft Magnetic ◽  
Magnetostatic Interaction ◽  
Beam Sputtering ◽  
Amorphous Si ◽  
The Relationship

AbstractFe and Si layers were deposited alternately by using ion beam sputtering apparatus and the relationship between crystal structure and soft magnetic properties of these multi-layered films have been investigated in detail. The clear periodicity of multi-layered films was confirmed even at the thicknesses of Fe and Si layers δFe and δSi as small as 8.5 Å.The saturation magnetization 4πMs for all Fe layers decreased with decrease of δFe and δSi, and the coercivity Hc of these films took minimum of 1.0 Oe at δFe of 8.5 Å.Such a significant decrease of 4TEMs may be attributed to the formation of nonmagnetic regions at both side of each Fe layers. The thickness of these nonmagnetic regions may be estimated at approximately 1.5 Å from the measured value of 4flMs. This thickness seems to be very small because it is almost equal to that of one monolayer of bcc α-Fe. The low Hc of the films with δFe and δSi of 8.5 Å may be due to the formation of ultra-fine crystallites in Fe layer by insertion of amorphous Si layer and the direct magnetostatic interaction among Fe layers.

PbTiO3 Films Deposited by an Alternating Dual-Target Ion Beam Sputtering Technique

1991 ◽  
Vol 243 ◽  
Author(s):  
B.E. Cole ◽  
R.D. Horning ◽  
P.W. Kruse
Keyword(s):  
Structural Characteristics ◽  
Ion Beam ◽  
Pyroelectric Coefficient ◽  
Dielectric Constants ◽  
Thin Layers ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Beam Sputtering ◽  
Dual Target

AbstractThin films, 0.2 μm to 2 μm thick, of ferroelectric PbTiO3 have been deposit ed on Pt coated Si wafers using a novel dual target ion beam sputtering technique. The sputtering targets of PbO and Ti are shuttled back and forth into a Xe ion beam, depositing very thin (10 - 15 Å) alternating layers of PbO and TiO2. The substrate is heated in situ, allowing interdiffusion of the thin layers into a homogeneous PbTiO3 film. Film composition can be controlled accurately and repeatably by controlling the ratio of the sputtering times from each target. Structural characteristics were analyzed by x-ray diffraction, Rutherford backscattering as a function of the sputtering time ratio and the deposition temperature on Pt and Si3N4 coated Si substrates. The stoichiometric PbTiO3 films have a tetragonal perovskite structure with a slight c-axis preference. Capacitor structures show ferroelectric hysterisis loops, dielectric constants of 100-250, loss tangents between 0.002 and 0.04 and a pyroelectric coefficient greater than 5 x 10−8 C/cm2 °C.

Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

1973 ◽  
Vol 31 ◽  
pp. 122-123
Author(s):  
J. S. Maa ◽  
Thos. E. Hutchinson
Keyword(s):  
Epitaxial Growth ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Microscopy Technique ◽  
Direct Observations ◽  
In Situ Electron Microscopy ◽  
Beam Sputtering ◽  
The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

2003 ◽  
Vol 762 ◽  
Author(s):  
Z.B. Zhou ◽  
G.M. Hadi ◽  
R.Q. Cui ◽  
Z.M. Ding ◽  
G. Li
Keyword(s):  
Solar Cell ◽  
Ion Beam ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Chamber Pressure ◽  
Ion Beam Sputtering ◽  
High Hydrogen ◽  
Beam Sputtering ◽  
Si Films ◽  
Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

Preparation of thin films of (Tb,Dy)Fe2 giant magnetostrictive alloy by ion beam sputtering process.

1996 ◽  
Vol 8 (1/2) ◽  
pp. 27-28
Author(s):  
Mitsuhiro WADA ◽  
Yoshihito MATSUMURA ◽  
Hirohisa UCHIDA ◽  
Haru-Hisa UCHIDA ◽  
Hideo KANEKO
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Properties of indium oxide/tin oxide multilayered films prepared by ion-beam sputtering

1988 ◽  
Vol 23 (8) ◽  
pp. 3026-3030 ◽  
Author(s):  
Takeyuki Suzuki ◽  
Tsutomu Yamazaki ◽  
Harunobu Oda
Keyword(s):  
Indium Oxide ◽  
Tin Oxide ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Multilayered Films ◽  
Beam Sputtering

Influence of ion beam parameters onto two-dimensional optical thin film thickness distributions deposited by ion beam sputtering

2019 ◽  
Vol 682 ◽  
pp. 109-120 ◽  
Author(s):  
Wjatscheslaw Sakiew ◽  
Stefan Schrameyer ◽  
Marco Jupé ◽  
Philippe Schwerdtner ◽  
Nick Erhart ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Ion Beam ◽  
Two Dimensional ◽  
Ion Beam Sputtering ◽  
Thin Film Thickness ◽  
Optical Thin Film ◽  
Beam Sputtering ◽  
Beam Parameters
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