Point defect trapping in solid‐phase epitaxially grown silicon‐antimony alloys

1984 ◽  
Vol 55 (4) ◽  
pp. 837-840 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
O. W. Holland
Keyword(s):  
Point Defect ◽  
Solid Phase ◽  
Antimony Alloys

Anomalous Point Defect Injection During Pulsed Laser Melting Processes: Direct Evidence of Gai and Asi Profiles in GaAs

1991 ◽  
Vol 230 ◽  
Author(s):  
Yih Chang ◽  
Thomas W. Sigmon
Keyword(s):  
Point Defect ◽  
Gaas Substrate ◽  
Direct Evidence ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Atomic Scale ◽  
Large Temperature ◽  
Laser Melting ◽  
Defect Injection ◽  
First Time

AbstractSignificant point defect injection during a pulsed laser melt process is reported for the first time. Heteroepitaxial InxGa1-xAs/GaAs layers fabricated by a pulsed laser induced epitaxy technique are used in this study. Transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) and secondary ion mass spectrometry (SIMS) are employed to study the redistribution behavior of each species on the atomic scale. It is found that both the Si dopant species and the Ga, As, and In host atoms are injected into the underlying GaAs substrate. These species are then significantly redistributed, forming near spherical As-rich regions. Direct evidence of Asi and Gai (Ga and As interstitialcies) profiles in the GaAs substrate are also obtained for the first time. A hypothesis, based upon the combined effects of concentration impulse and large temperature gradients across the liquid-solid interface, is proposed to explain the significant solid phase diffusion observed during the pulsed laser melting process. We estimate the temperature gradient induced electric field during the process to be on the order of 104V/cm.

scholarly journals Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms

1990 ◽  
Vol 205 ◽  
Author(s):  
Guo-Quan Lu ◽  
Eric Nygren ◽  
Michael J. Aziz
Keyword(s):  
Hydrostatic Pressure ◽  
Point Defect ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Dangling Bond ◽  
Amorphous Phases ◽  
Plausible Model ◽  
Bond Mechanism

AbstractWe have measured the effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rates of undoped Ge(100) and Si(100) into their respective self-implanted amorphous phases. We found that pressure enhances the growth process in both Si and Ge, with activation volumes equal to -3.3 ± 0.3 cm3/mole for Si and -6.3 ± 0.60 cm3/mole for Ge. The results of this and other experiments are inconsistent with all bulk point-defect mechanisms, but are consistent with all interface point-defect mechanisms, proposed to date for thermal SPEG. A kinetic analysis of the Spaepen-Turnbull dangling bond mechanism shows it to be a highly plausible model for the growth process.

Point defect Supersaturation and Enhanced Diffusion in SPE Regrown Silicon.

1983 ◽  
Vol 27 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
O. W. Holland
Keyword(s):  
Activation Energy ◽  
Point Defect ◽  
Solid Phase ◽  
High Concentration ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Migration Enthalpy

ABSTRACTTransient, greatly enhanced diffusion has been observed on annealing solid-phase-epitaxial (SPE) grown Si-Sb alloys. This is shown to be due to a high concentration of interstitials being trapped during SPE regrowth. The migration enthalpy, for diffusion of Sb by an interstitialcy mechanism was measured as 1.8 ± 0.2 eV. The interstitials eventually condensed into loops, marking the end of the transient. In a SPE grown Si-Bi alloy a similar transient enhanced diffusion was observed, with an activation energy of 2.0 ± 0.2 eV, but no loops formed.

Solid-phase regrowth of amorphous silicon layers in the presence of the point defect flux

1989 ◽  
Vol 39 (1-4) ◽  
pp. 366-369
Author(s):  
A.V. Buravlyov ◽  
A.G. Italyantsev ◽  
Z.Ya. Krasnobayev ◽  
V.N. Mordkovich ◽  
A.F. Vyatkin
Keyword(s):  
Amorphous Silicon ◽  
Point Defect ◽  
Solid Phase ◽  
Solid Phase Regrowth

Possible Mechanism Of The Stress Evolution And Point Defects Generation During The Solid Phase Epitaxial Silicide Growth.

1991 ◽  
Vol 238 ◽  
Author(s):  
A. G. Italjantsev ◽  
A.Yu. Kuznetsov
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Solid Phase ◽  
Vacancy Concentration ◽  
Local Stress ◽  
Thin Metal Film ◽  
Generation Rate ◽  
Solid State Reactions ◽  
Thermodynamic Force ◽  
Defect Generation

ABSTRACTIn this paper we present a model of nonequilibrium point defect generation in the silicon substrate during solid state reactions of the surface suicides formation, resulting from the interaction between the substrate and the thin metal film. The model is based on the following principles. The local stress, which is appearing during each act of the suicide molecule (MexSiy) creation at the suicide - silicon interface, relaxes by the generation of ηv point defects. The point defect generation rate (m is the suicide growth rate) has been defined by the mininimization of the system free energy AG, which includes the enthalpy of chemical reaction ΔG the value of the relaxed elastic energyμ is the silicon shear modulus, Ω = (xΩMe+yΩSi) is the combined volume of metal and silicon atoms with stoichiometric coefficients, ΔΩ = (ΩMexSiy - Ω), ΩV is the vacancy volume in the matrix; and the term ΔGd = ηVkTln(C/C0) which takes into account the energy of the solid solution of noninteracting point defects, where C° is an equilibrium vacancy concentration and C is the real vacancy concentration. The estimations show that there is not any essential thermodynamic force which may prevent stress relaxation for any reasonable point defect supersaturation. For this case point defect generation rate may be written as jV = m(ΔΩ/ΩV). For the reactions of the initial phase formation in the Me-Si structures the values of ΔG*el, ηV and jV have been calculated and it has been shown that vacancy concentration can reach the values of 1015 - 1016 cm-3 at the regions nearest to the interface even during initial low temperature stages of the Ni, Pt, Cr suicide formation with the metal atoms are predominant moving species.

Solid-phase immunoelectron microscopy for rapid diagnosis of enteroviruses

1984 ◽  
Vol 42 ◽  
pp. 226-227 ◽  
Author(s):  
K. Pegg-Feige ◽  
F. W. Doane
Keyword(s):  
Electron Microscopy ◽  
Cell Culture ◽  
Immunoelectron Microscopy ◽  
Detection Method ◽  
Solid Phase ◽  
Protein A ◽  
Plant Viruses ◽  
Rapid Diagnosis ◽  
Virus Diagnosis ◽  
Antiviral Antibody

Immunoelectron microscopy (IEM) applied to rapid virus diagnosis offers a more sensitive detection method than direct electron microscopy (DEM), and can also be used to serotype viruses. One of several IEM techniques is that introduced by Derrick in 1972, in which antiviral antibody is attached to the support film of an EM specimen grid. Originally developed for plant viruses, it has recently been applied to several animal viruses, especially rotaviruses. We have investigated the use of this solid phase IEM technique (SPIEM) in detecting and identifying enteroviruses (in the form of crude cell culture isolates), and have compared it with a modified “SPIEM-SPA” method in which grids are coated with protein A from Staphylococcus aureus prior to exposure to antiserum.

Application of solid-phase immune electron microscopy to study physical and stability characteristics of enterically transmitted non-a, non-b hepatitis virus

1988 ◽  
Vol 46 ◽  
pp. 80-81
Author(s):  
Charles D. Humphrey ◽  
E. H. Cook ◽  
Karen A. McCaustland ◽  
Daniel W. Bradley
Keyword(s):  
Electron Microscopy ◽  
Hepatitis A ◽  
Hepatitis A Virus ◽  
Solid Phase ◽  
Etiologic Agent ◽  
World Health ◽  
Health Concern ◽  
Morphological Identification ◽  
Immune Electron Microscopy

Enterically transmitted non-A, non-B hepatitis (ET-NANBH) is a type of hepatitis which is increasingly becoming a significant world health concern. As with hepatitis A virus (HAV), spread is by the fecal-oral mode of transmission. Until recently, the etiologic agent had not been isolated and identified. We have succeeded in the isolation and preliminary characterization of this virus and demonstrating that this agent can cause hepatic disease and seroconversion in experimental primates. Our characterization of this virus was facilitated by immune (IEM) and solid phase immune electron microscopic (SPIEM) methodologies.Many immune electron microscopy methodologies have been used for morphological identification and characterization of viruses. We have previously reported a highly effective solid phase immune electron microscopy procedure which facilitated identification of hepatitis A virus (HAV) in crude cell culture extracts. More recently we have reported utilization of the method for identification of an etiologic agent responsible for (ET-NANBH).

Identification of hepatitis a virus in cell cultures by solid phase immune electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 238-239
Author(s):  
C.D. Humphrey ◽  
T.L. Cromeans ◽  
E.H. Cook ◽  
D.W. Bradley
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Cell Cultures ◽  
Rapid Detection ◽  
Hepatitis A ◽  
Hepatitis A Virus ◽  
Solid Phase ◽  
Immune Electron Microscopy ◽  
Detection And Identification

There is a variety of methods available for the rapid detection and identification of viruses by electron microscopy as described in several reviews. The predominant techniques are classified as direct electron microscopy (DEM), immune electron microscopy (IEM), liquid phase immune electron microscopy (LPIEM) and solid phase immune electron microscopy (SPIEM). Each technique has inherent strengths and weaknesses. However, in recent years, the most progress for identifying viruses has been realized by the utilization of SPIEM.

Dynamic studies of silicide-mediated crystallization of amorphous silicon

1992 ◽  
Vol 50 (2) ◽  
pp. 1352-1353
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Metallic Phase ◽  
Single Crystal Substrate ◽  
Free Electrons ◽  
Melt Temperature ◽  
Transmission Electron ◽  
Crystal Substrate ◽  
High Resolution Tem

Epitaxial reordering of amorphous Si(a-Si) on an underlying single-crystal substrate occurs well below the melt temperature by the process of solid phase epitaxial growth (SPEG). Growth of crystalline Si(c-Si) is known to be enhanced by the presence of small amounts of a metallic phase, presumably due to an interaction of the free electrons of the metal with the covalent Si bonds near the growing interface. Ion implantation of Ni was shown to lower the crystallization temperature of an a-Si thin film by approximately 200°C. Using in situ transmission electron microscopy (TEM), precipitates of NiSi2 formed within the a-Si film during annealing, were observed to migrate, leaving a trail of epitaxial c-Si. High resolution TEM revealed an epitaxial NiSi2/Si(l11) interface which was Type A. We discuss here the enhanced nucleation of c-Si and subsequent silicide-mediated SPEG of Ni-implanted a-Si.Thin films of a-Si, 950 Å thick, were deposited onto Si(100) wafers capped with 1000Å of a-SiO2. Ion implantation produced sharply peaked Ni concentrations of 4×l020 and 2×l021 ions cm−3, in the center of the films.

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