Annealing of High Dose C Implanted Si by Pulsed Electron Beam

1983 ◽  
Vol 23 ◽  
Author(s):  
P. Durupt ◽  
D. Barbier ◽  
A. Laugier
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Thermal Annealing ◽  
Rutherford Backscattering ◽  
Low Energy ◽  
High Dose ◽  
Pulsed Electron Beam ◽  
Beam Characterization

ABSTRACTHigh dose (1–7 1017cm−2), low energy (10–40 keV) C implanted Si samples were annealed by conventional thermal procedure and by pulsed electron beam. Characterization is performed by I.R., electron diffraction and Rutherford Backscattering. Effect of PEBA is equivalent to thermal annealing at 900°C. No C redistribution occurs and a poor recrystallization of the SiC formed during implantation is observed.

Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen

1997 ◽  
Vol 248-249 ◽  
pp. 253-256 ◽  
Author(s):  
T. Hauser ◽  
L. Bredell ◽  
H. Gaigher ◽  
H. Alberts ◽  
A. Botha ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Dose ◽  
Pulsed Electron Beam ◽  
High Dose Implantation

Pulsed electron-beam annealing of high-dose arsenic implanted silicon

1980 ◽  
Vol 22 (4) ◽  
pp. 385-388 ◽  
Author(s):  
A. Turos ◽  
J. Geerk
Keyword(s):  
Electron Beam ◽  
High Dose ◽  
Pulsed Electron Beam

Bacterial Inactivation Using Low-Energy Pulsed-Electron Beam

2004 ◽  
Vol 32 (4) ◽  
pp. 1532-1539 ◽  
Author(s):  
P.R. Chalise ◽  
M.S. Rahman ◽  
H. Ghomi ◽  
Y. Hayashi ◽  
M. Watanabe ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Energy ◽  
Bacterial Inactivation ◽  
Pulsed Electron Beam

Inactivation of Cells and Spores ofBacillus subtilisUsing Low Energy Pulsed Electron Beam

2006 ◽  
Vol 45 (No. 33) ◽  
pp. L881-L883 ◽  
Author(s):  
Mohammad Shahedur Rahman ◽  
Hamid Ghomi ◽  
Priya Raj Chalise ◽  
Yasushi Hayashi ◽  
Masato Watanabe ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Energy ◽  
Pulsed Electron Beam

GROWTH OF SiC NANOSTRUCTURES ON Si (100) USING LOW ENERGY CARBON ION IMPLANTATION AND ELECTRON BEAM RAPID THERMAL ANNEALING

2004 ◽  
Vol 03 (04n05) ◽  
pp. 425-430 ◽  
Author(s):  
A. MARKWITZ ◽  
S. JOHNSON ◽  
M. RUDOLPHI ◽  
H. BAUMANN
Keyword(s):  
Atomic Force Microscopy ◽  
Electron Beam ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Energy ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Implantation Fluence

A combination of 10 keV 13 C low energy ion implantation and electron beam rapid thermal annealing (EB-RTA) is used to fabricate silicon carbide nanostructures on (100) silicon surfaces. These large ellipsoidal features appear after EB-RTA at 1000°C for 15 s. Prior to annealing, the silicon surfaces are virgin-like flat. Atomic force microscopy was used to study the morphology of these structures and it was found that the diameter and number of nanoboulders are linearly dependent on the implantation fluence. Further, a linear relationship between nanoboulder diameter and spacing suggests crystal coarsening is a fundamental element in the growth mechanism.

Microstructure, Texture and Residual Stresses Induced by Surface Thermo-Mechanical Treatments

2011 ◽  
Vol 675-677 ◽  
pp. 9-14
Author(s):  
Thierry Grosdidier ◽  
Bernard Bolle ◽  
J.D. Puerta Velásquez ◽  
J.X. Zou ◽  
Jean-Jacques Fundenberger ◽  
...  
Keyword(s):  
Electron Beam ◽  
Residual Stresses ◽  
High Speed ◽  
Processing Parameters ◽  
Low Energy ◽  
Difficult Case ◽  
High Speed Machining ◽  
High Current ◽  
Pulsed Electron Beam ◽  
Ti Alloys

This paper reviews some recent results concerning surface integrity of materials processed with two important developing techniques: high speed machining (HSM) – here applied to the difficult case of Ti alloys – and low energy high current pulsed electron beam (LEHCPEB) surface treatment of steels. The effect of the processing parameters on the development of microstructure, texture and residual stresses is detailed for modifications occurring both at the surfaces and sub-surfaces.

Instrumentation for gas electron diffraction employing a pulsed electron beam synchronous with photoexcitation

1992 ◽  
Vol 63 (6) ◽  
pp. 3352-3358 ◽  
Author(s):  
John D. Ewbank ◽  
Walter L. Faust ◽  
Jing Y. Luo ◽  
Jeffrey T. English ◽  
David L. Monts ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Gas Electron Diffraction ◽  
Pulsed Electron Beam

Characterization of Surface Defect Structure by Low Energy Electron Diffraction

1984 ◽  
Vol 41 ◽  
Author(s):  
J. F. Wendelken ◽  
G. -C. Wang ◽  
J. M. Pimbley ◽  
T. -M. Lu
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Surface Defect ◽  
Low Energy ◽  
Experimental Results ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

AbstractLow energy electron diffraction is a surface sensitive tool which is most widely used for the determination of surface symmetries and equilibrium atomic positions. Experimental and theoretical advances made in the past five years make it possible now to use LEED also for the characterization of a wide variety of surface defect structures. In this paper a variety of experimental results involving analysis of diffracted electron beam shapes as a function of primary electron beam energy, adsorbate coverage, crystal tem-perature and ordering time are presented. These experimental results coupled with kinematic theory, allow the determination of step density, size and shape of reconstruction domains and overlayer islands, island size distribution in an overlayer during growth, and the mode of growth.

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