Pulsed electron-beam annealing of high-dose arsenic implanted silicon

1980 ◽  
Vol 22 (4) ◽  
pp. 385-388 ◽  
Author(s):  
A. Turos ◽  
J. Geerk
1997 ◽  
Vol 248-249 ◽  
pp. 253-256 ◽  
Author(s):  
T. Hauser ◽  
L. Bredell ◽  
H. Gaigher ◽  
H. Alberts ◽  
A. Botha ◽  
...  

1983 ◽  
Vol 23 ◽  
Author(s):  
P. Durupt ◽  
D. Barbier ◽  
A. Laugier

ABSTRACTHigh dose (1–7 1017cm−2), low energy (10–40 keV) C implanted Si samples were annealed by conventional thermal procedure and by pulsed electron beam. Characterization is performed by I.R., electron diffraction and Rutherford Backscattering. Effect of PEBA is equivalent to thermal annealing at 900°C. No C redistribution occurs and a poor recrystallization of the SiC formed during implantation is observed.


2019 ◽  
Vol 139 ◽  
pp. 34-39 ◽  
Author(s):  
Patrik Gonçalves Jorge ◽  
Maud Jaccard ◽  
Kristoffer Petersson ◽  
Maude Gondré ◽  
Maria Teresa Durán ◽  
...  

2016 ◽  
Vol 119 ◽  
pp. S690
Author(s):  
M. Jaccard ◽  
K. Petersson ◽  
T. Buchillier ◽  
C. Bailat ◽  
J.F. Germond ◽  
...  

Author(s):  
С.В. Никифоров ◽  
А.Д. Борболин ◽  
А.Ю. Марфин ◽  
А.Ф. Никифоров

Optically induced effects in ultrafine Al2O3-BeO ceramics irradiated with high doses of a pulsed electron beam (130 keV) were investigated. It is found that optical (470 nm) excitation of ceramics results in optically stimulated luminescence due to the emptying of traps associated with thermoluminescence peaks at 380 and 530 K. It is found that these traps are characterized by a complex energy spectrum with a non-uniformly distributed photoionization cross section. The prospect of using optically stimulated luminescence of Al2O3-BeO ceramics in high-dose dosimetry (3-30 kGy) is proved.


2021 ◽  
Author(s):  
Raphaël Moeckli ◽  
Patrik Gonçalves Jorge ◽  
Veljko Grilj ◽  
Roxane Oesterle ◽  
Nicolas Cherbuin ◽  
...  

2012 ◽  
Vol 132 (11) ◽  
pp. 951-957
Author(s):  
Hiroki Kaneko ◽  
Yasushi Yamano ◽  
Shinichi Kobayashi ◽  
Yoshio Saito

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