Growth of Nickel Silicides on Silicon by Short Duration Incoherent Light Exposure

1983 ◽  
Vol 23 ◽  
Author(s):  
A. Nylandsted Larsen ◽  
J. Chevallier ◽  
G. Sørensen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Short Duration ◽  
Rutherford Backscattering Spectrometry ◽  
Light Exposure ◽  
Xenon Lamp ◽  
Sheet Resistivity ◽  
Incoherent Light ◽  
Transmission Electron ◽  
Nickel Silicides

ABSTRACTShort duration, incoherent light from a xenon lamp has been used to grow nickel silicides on silicon single crystals from evaporated nickel films. The formation of these silicides was studied by Rutherford Backscattering Spectrometry, channeling, sheet resistivity, and transmission electron microscopy as function of induced temperature (550– 775°C), exposure time (8– 25 sec), and silicon orientation (>111<, >110<, and >100<). Epitaxial NiSi2 films were formed for temperatures above ˜675°C whereas polycrystalline NiSi films were formed below this temperature.

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

Photo Modified Growth of GaAs by Chemical Beam Epitaxy

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Jothilingam ◽  
T. Farrell ◽  
T.B. Joyce ◽  
P.J. Goodhew
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Electrical Power ◽  
Xenon Lamp ◽  
Chemical Beam Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
Laser Reflectometry

AbstractWe report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) provided the irradiation for the photoassisted growth. The growth was monitored in real time by laser reflectometry (LR) using a 670 nm semiconductor laser, and the optically determined growth rate agreed with that obtained from the layer thickness measured by cross sectional transmission electron microscopy. The observed photo-enhancement of the growth rate at low substrate temperatures and inhibition at high substrate temperatures is thermal in origin, consistent with raising the substrate temperature by 10±3°C. Cross sectional transmission electron microscopy showed that the photoassisted layers are essentially free from dislocations

Stability of Heavily Doped Si Formed by As+ Implantation and Rapid Thermal Annealing

1985 ◽  
Vol 52 ◽  
Author(s):  
Muhammad Z. Numan ◽  
Z. H. Lu ◽  
W. K. Chu ◽  
D. Fathy ◽  
J. J. Wortman
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Thermal Annealing ◽  
Dislocation Loops ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Transmission Electron ◽  
Heavily Doped ◽  
Sheet Resistance Measurement ◽  
Short Time

ABSTRACTDeactivation of ion implanted and rapid thermal annealed (RTA) metastable arsenic in silicon during subsequent furnace annealing has been studied by sheet resistance measurement, Rutherford backs cat t ering/ channeling (RBS), and transmission electron microscopy (TEM). Following RTA, thermal annealing induces deactivation of the dopant which increases the sheet resistivity monotonically with temperature for a very short time, Dislocation loops are formed near the peak of As concentration at post-anneal temperatures of 750°C or higher, where deactivation rate is fast. At lower temperatures deactivation is accompanied by displacement of As atoms, possibly forming clusters.

Wet Oxidation of Si1-x-yGexCy Layers on (100) Si

1995 ◽  
Vol 398 ◽  
Author(s):  
A. E. Bair ◽  
Z. Atzmon ◽  
T. L. Alford ◽  
D. Chandrasekhar ◽  
David J. Smith
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Oxidation Behavior ◽  
Rutherford Backscattering Spectrometry ◽  
Reference Sample ◽  
Oxide Growth ◽  
Wet Oxidation ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Content Alloy

ABSTRACTSingle crystal Si0.63Ge0.36C0.01 and amorphous Si0.65Ge0.27C0.08 layers have been oxidized in a wet ambient at 700 °C and 900 °C. The oxide growth has been studied using Rutherford backscattering spectrometry and transmission electron microscopy. A reference sample of Si0.63Ge0.37 was also oxidized in order to determine the influence of C on the oxidation behavior. The lower C content alloy behaved similar to the SiGe alloy. Uniform Si1-xGexO2 was obtained at 700 °C whereas SiO2 was formed at 900 °C, and Ge piled up underneath the oxide. In both cases, C was not detected in the oxide layer. The amorphous Si0.65Ge0.27C0.08 alloy behaved significantly different at both oxidation temperatures in comparison with the crystalline Si0.63Ge0.36C0.01 and Si0.63Ge0.37. Negligible oxidation occurred at 700 °C whereas SiO2 was obtained at 900 °C and the rejected Ge distributed uniformly throughout the SiGeC alloy. It is proposed that fast Ge diffusion during oxidation at 900 °C resulted from diffusion at grain boundaries, since crystallization of the amorphous SiGeC layer occurred in conjunction with oxidation, leading to nucleation of ∼5 nm nanocrystals.

Transmission electron microscopy studies on the lateral growth of nickel silicides

1985 ◽  
Vol 57 (2) ◽  
pp. 258-263 ◽  
Author(s):  
S. H. Chen ◽  
L. R. Zheng ◽  
C. B. Carter ◽  
J. W. Mayer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Lateral Growth ◽  
Transmission Electron ◽  
Nickel Silicides

Preparation of Bionic Structure TiO2 Using Napkin as Template and its Photocatalytic Performance

2014 ◽  
Vol 787 ◽  
pp. 52-57
Author(s):  
Feng Chen ◽  
Cheng Bao Liu ◽  
Jun Chao Qian ◽  
Zheng Ying Wu ◽  
Zhi Gang Chen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Photocatalytic Performance ◽  
High Specific Surface Area ◽  
Xenon Lamp ◽  
Nitrogen Absorption ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Bet Method ◽  
Bionic Structure

Biomophic titanium oxide with nanocrystalline was successfully synthesized using napkin template, which everybody uses. Unique biomorphic microstructures were characterized by field emission scanning electron microscope (FESEM), transmission electron microscopy (TEM) and nitrogen absorption-desorption techniques. TiO2 material was characterized by repetitious networks consisting of the fibers with diameter of 1-6μm. The results showed that the products were composed by polycrystalline TiO2 nanoparticles with diameter of ca. 5-8 nm and the high specific surface area (81.0 m2·g-1) of sample,which were believed to result from the X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and the Brunauer-Emmett-Teller (BET) method. While the concentration of acid black solution was 20 mg/L, catalyst amount 0.1 g/L, the reaction had a higher photocatalytic performance following irradiation with a visible light by xenon lamp, the decoloring rate can reach over 100% after 250 min.

RBS, TEM and SEM Characterization of Gold Nanoclusters in TiO2(110)

2003 ◽  
Vol 792 ◽  
Author(s):  
V. Shutthanandan ◽  
Y. Zhang ◽  
C. M. Wang ◽  
J. S. Young ◽  
L. Saraf ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Gold Nanoclusters ◽  
Subsequent Annealing ◽  
Transmission Electron ◽  
Scanning Electron

ABSTRACTNucleation of gold nanoclusters in TiO2(110) single crystal using ion implantation and subsequent annealing were studied by Rutherford backscattering spectrometry /channeling (RBS/C), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Approximately 1000 Au2+/nm2 were implanted at room temperature in TiO2(110) substrates. TEM and SEM measurements reveal that rounded nanoclusters were formed during the implantation. In contrast, subsequent annealing in air for 10 hours at 1275 K promoted the formation of faceted (rectangular shaped) Au nanostructures in TiO2. RBS channeling measurements further reveled that Au atoms randomly occupied the host TiO2 lattice during the implantation. However, it appears that some Au atoms moved to the Ti lattice positions after annealing.

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