Wet Oxidation of Si1-x-yGexCy Layers on (100) Si

1995 ◽  
Vol 398 ◽  
Author(s):  
A. E. Bair ◽  
Z. Atzmon ◽  
T. L. Alford ◽  
D. Chandrasekhar ◽  
David J. Smith
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Oxidation Behavior ◽  
Rutherford Backscattering Spectrometry ◽  
Reference Sample ◽  
Oxide Growth ◽  
Wet Oxidation ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Content Alloy

ABSTRACTSingle crystal Si0.63Ge0.36C0.01 and amorphous Si0.65Ge0.27C0.08 layers have been oxidized in a wet ambient at 700 °C and 900 °C. The oxide growth has been studied using Rutherford backscattering spectrometry and transmission electron microscopy. A reference sample of Si0.63Ge0.37 was also oxidized in order to determine the influence of C on the oxidation behavior. The lower C content alloy behaved similar to the SiGe alloy. Uniform Si1-xGexO2 was obtained at 700 °C whereas SiO2 was formed at 900 °C, and Ge piled up underneath the oxide. In both cases, C was not detected in the oxide layer. The amorphous Si0.65Ge0.27C0.08 alloy behaved significantly different at both oxidation temperatures in comparison with the crystalline Si0.63Ge0.36C0.01 and Si0.63Ge0.37. Negligible oxidation occurred at 700 °C whereas SiO2 was obtained at 900 °C and the rejected Ge distributed uniformly throughout the SiGeC alloy. It is proposed that fast Ge diffusion during oxidation at 900 °C resulted from diffusion at grain boundaries, since crystallization of the amorphous SiGeC layer occurred in conjunction with oxidation, leading to nucleation of ∼5 nm nanocrystals.

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

Structural Properties of Amorphous Silicon Produced by Electron Irradiation

1999 ◽  
Vol 557 ◽  
Author(s):  
J. Yamasaki ◽  
S. Takeda
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Distribution Function ◽  
Structural Properties ◽  
Electron Irradiation ◽  
Low Temperatures ◽  
Crystalline Silicon ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Means Of Transmission

AbstractThe structural properties of the amorphous Si (a-Si), which was created from crystalline silicon by 2 MeV electron irradiation at low temperatures about 25 K, are examined in detail by means of transmission electron microscopy and transmission electron diffraction. The peak positions in the radial distribution function (RDF) of the a-Si correspond well to those of a-Si fabricated by other techniques. The electron-irradiation-induced a-Si returns to crystalline Si after annealing at 550°C.

Crystallization of Amorphous Si In Al/Si Multilayers

1991 ◽  
Vol 230 ◽  
Author(s):  
Toyohiko J. Konno ◽  
Robert Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Layered Structure ◽  
Heat Of Reaction ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron ◽  
Amorphous Si

AbstractThe crystallization of amorphous Si in a Al/Si multilayer (with a modulation length of about 120Å) was investigated using transmission electron microscopy, differential scanning calorimetry and X-ray diffraction. Amorphous Si was found to crystallize at about 175 °C with the heat of reaction of 11±2(kJ/mol). Al grains grow prior to the nucleation of crystalline Si. The crystalline Si was found to nucleate within the grown Al layers. The incipient crystalline Si initially grows within the Al layer and then spreads through the amorphous Si and other Al layers. Because of extensive intermixing, the original layered structure is destroyed. The Al(111) texture is also enhanced.

Deformation of Monocrystalline Silicon under Nanoscratching

2008 ◽  
Vol 41-42 ◽  
pp. 15-19 ◽  
Author(s):  
Y.Q. Wu ◽  
Han Huang ◽  
Jin Zou
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Applied Load ◽  
Normal Load ◽  
Stacking Faults ◽  
Monocrystalline Silicon ◽  
Crystalline Region ◽  
Density Of Dislocations ◽  
Transmission Electron ◽  
Amorphous Si

In this work, deformation of monocrystalline silicon (Si) under nanoscratching was investigated using transmission electron microscopy (TEM). The results indicated that no fracture occurred during nanoscratching with loads ranging from 1 to 6 mN. The damaged regions induced by nanoscratching included an amorphous Si region and a damaged crystalline Si region. Detailed TEM analyses revealed that at the lowest load of 1 mN no dislocation was observed in the damaged crystalline region, and only stacking faults were observed at the boundary between the damaged crystalline Si and amorphous Si. Dislocations started to nucleate along (111) planes and penetrated into the bulk Si when the normal load was increased to 2 mN and above. Defects perpendicular to the scratched surface were initiated when the load was greater than 4 mN. The density of dislocations also increased rapidly with the increase of the applied load.

The Study on Surface Chemistry of Nanoporous Black Si Layers

2011 ◽  
Vol 79 ◽  
pp. 304-308
Author(s):  
Wang Li
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Chemistry ◽  
Point Defects ◽  
High Density ◽  
Nanometer Scale ◽  
Transmission Electron ◽  
One Step ◽  
Amorphous Si ◽  
Microscopy Techniques

We reported our detailed investigation of the microstructure and surface chemistry of nanoporous black Si layers using transmission electron microscopy techniques such as HRTEM, EDS, and EELS. We found that a one-step nanoparticle-catalyzed liquid etch creates deep conical nanovoids. The cones provide the density-graded surface that suppresses reflection. The surface of the as-etched nanoporous black Si is an amorphous Si suboxide (SiOx) produced by the strongly oxidizing nanocatalyzed etch. The c-Si/suboxide interface is rough at the nanometer scale and contains a high density of point defects.

Altering the Oxidation Resistance of Iron Via ion Beam Alloying

1994 ◽  
Vol 373 ◽  
Author(s):  
Ivan H. Murzin ◽  
Donald I. Potter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapor Deposition ◽  
Rate Constants ◽  
Oxidation Behavior ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Oxidation Rates ◽  
Parabolic Kinetics ◽  
Transmission Electron

AbstractFe-Cr, Fe-Y and Fe-Cr-Y surface alloys were produced by direct ion implantation, ion beam mixing, and combinations of implantation and vapor deposition. The influence of these treatments on the oxidation behavior of iron was investigated in 1 atm. of oxygen at 520°C. The oxidation rates were less in all the ion beam alloyed iron samples than in untreated iron. The oxidation follows parabolic kinetics in most cases, with the rate constants, Kp, in the range (3-8)×10−6 mg2cm−4 sec−l versus 2.2×10−5 mg2 cm−4 sec−1 for untreated iron. Yttrium fluences between 5×1014 and 5×lO15 cm−2 did not alter the microstructures of iron significantly. However, fluences of 1×1016, 3×1016, 5x1016 and 1x1017 cm−2 caused the crystalline structure of iron to be replaced by an amorphous phase. The presence of this phase was demonstrated with selected area channeling patterns and transmission electron microscopy.

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