Crystalline Orientation Control in Bi-Sr-Ca-Cu-O Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Yoshiki Ishizuka ◽  
Yoshiaki Terashima ◽  
Tadao Miura
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Growth Mechanism ◽  
Oxygen Plasma ◽  
Film Growth ◽  
Plasma Condition ◽  
Crystalline Orientation ◽  
Orientation Control

ABSTRACTBi-Sr-Ca-Cu-0 thin films were prepared on (110)SrTiO3 by coevaporation with rf oxygen plasma. The non-(00n) crystalline orientations were formed in the Bi2 Sr2Ca2Cu3Oy1 Bi2Sr2 CaCu2Oy2 and Bi2Sr2CuOy3 phases. Furthermore, it was confirmed that the chemical composition and the oxygen plasma condition influenced the crystalline orientation. On the basis of these results, a new idea for the film growth mechanism is proposed.

Influence of Surface Energy on Ni-Fe Thin Films Formation Process

2019 ◽  
Vol 946 ◽  
pp. 228-234 ◽  
Author(s):  
T.I. Zubar ◽  
A.V. Trukhanov ◽  
D.A. Vinnik
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Surface Energy ◽  
Growth Mechanism ◽  
Microstructure Evolution ◽  
Direct Current ◽  
Film Growth ◽  
Binding Energies ◽  
Layer By Layer ◽  
Technological Parameters

The Ni-Fe thin films were produced via electrodeposition in four different modes - direct current, and three types of pulse-modes with different pulse duration onto Au sublayer. The correlation between technological parameters of the electrodeposition and microstructure was demonstrated. Analysis of microstructure evolution revealed an un-expected changing of the film growth mechanism from “island” to “layer-by-layer” with the decreasing of the grain size less than 10 nm. Explanation was found in binding energies competition, that has been defined using the unique AFM method, based on recording the angle of the cantilever twist, when scanning in contact with the surface.

Crystalline orientation control in sol–gel preparation of CuAlO2 thin films

2017 ◽  
Vol 82 (2) ◽  
pp. 363-369 ◽  
Author(s):  
Takashi Ehara ◽  
Hiroshi Abe ◽  
Ryo Iizaka ◽  
Kiyoaki Abe ◽  
Takuya Sato
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Crystalline Orientation ◽  
Orientation Control ◽  
Gel Preparation

scholarly journals Surface Dynamics Transition of Vacuum Vapor Deposited CH3NH3PbI3 Perovskite Thin Films

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Yunyan Liu ◽  
Hongsheng Song ◽  
Junshan Xiu ◽  
Meiling Sun ◽  
Dong Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Film Growth ◽  
Growth Dynamics ◽  
Growth Exponent ◽  
Dynamic Scaling ◽  
Scaling Exponent ◽  
Surface Dynamics ◽  
Second Stage ◽  
Two Stages

The growth dynamics of CH3NH3PbI3 perovskite thin films on ITO covered glass substrate were investigated. The evolution of the film could be divided into two stages. A mound-like surface was obvious at the first stage. Stable dynamic scaling was observed for thicker films at the second stage. Through analyzing the scaling exponent, growth exponent β, and 2D fast Fourier transform, it is concluded that, at the second stage, the growth mechanism of mound formation does not play a major role, and the film growth mechanism can be described by Mullins diffusion equation.

Growth of TiO2 Thin Films by Atomic Layer Deposition (ALD)

2016 ◽  
Vol 1133 ◽  
pp. 352-356 ◽  
Author(s):  
Rosniza Hussin ◽  
Kwang Leong Choy ◽  
Xiang Hui Hou
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Film Growth ◽  
Atomic Layer ◽  
Titanium Isopropoxide ◽  
Steel Plates ◽  
Important Material ◽  
Glass Slides ◽  
Layer Deposition

Ceramic oxide thin films are an important material, with applications in many areas of science and technology. Titanium oxide (TiO2) is also a well-known and important material for applications such as gas sensors [1], photocatalysis materials [3], and electrochemicals [1], due to its self-cleaning [2], good corrosion resistance and biocompatibility. Atomic Layer Deposition (ALD) is a nanotechnology tool that is used for the deposition of nanostructured thin films. The unique advantage of ALD is the self-limiting film growth mechanism, which offers attractive properties, simple and accurate film thickness control, sharp interfaces, uniformity over large areas, excellent conformality, good reproducibility, a multilayer processing capability, and high quality films at low temperatures [3, 4]. TiO2 thin films were grown using TTIP (Titanium isopropoxide) ALD on silicon wafers, glass slides, and stainless steel plates in order to study the effect of substrates on the growth of TiO2. In order to achieve the desired advantages of using TTIP, a series of experiments were performed to study the growth mechanism of TiO2 thin films using TTIP and H2O by ALD.

Growth and Properties of Carbon Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Z. John Zhang ◽  
Peidong Yang ◽  
Charles M. Lieber
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Carbon Nitride ◽  
Single Phase ◽  
Surface Reaction ◽  
Film Growth ◽  
Laser Deposition ◽  
Carbon And Nitrogen ◽  
532 Nm ◽  
Limiting Value

AbstractRecent research on carbon nitride thin films grown using pulsed laser deposition combined with atomic beam techniques is reviewed. the composition, growth mechanism and phases of these films have been systematically investigated. the nitrogen composition was found to increase to a limiting value of 50% as the fluence was decreased for laser ablation at both 532 nm and 248 nm wavelengths. Time of flight mass spectroscopy investigations of the ablation products have shown that the fluence variations affect primarily the yield of the carbon reactant. these experiments demonstrate that the overall film growth rate determines the average nitrogen composition, and furthermore, suggest that a key step in the growth mechanism involves a surface reaction between carbon and nitrogen. INfrared spectroscopy has been used to assess the phases present in the carbon nitride thin films as a function of the overall nitrogen content. these measurements have shown that a cyanogen-like impurity occurs in films with nitrogen compositions greater than 30%. Studies of thermal annealing have shown, however, that this impurity phase can be eliminated to yield a single phase C2N material. IN addition, systematic studies of the electrical resistivity and thermal conductivity of the carbon nitride films are discussed.

Examination of Particles and Outgrowths on the Surface of Epitaxial Yba2Cu3O7 Thin Films

1994 ◽  
Vol 341 ◽  
Author(s):  
M. Grant Norton ◽  
Rand R. Biggers ◽  
I. Maartense ◽  
E. K. Moser ◽  
Jeff L. Brown
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Growth Mechanism ◽  
Film Growth ◽  
Pulsed Laser ◽  
Film Surface ◽  
Nucleation And Growth ◽  
Laser Deposition ◽  
Scanning Probe ◽  
Deposition Parameters

AbstractThe surface morphology of Yba2Cu3O7 thin films formed on (001)-oriented LaAlO3 substrates by pulsed-laser deposition has been examined using electron and scanning probe microscopies. The observed surface features can be divided into two types: particles formed as a result of material (often molten) ejected from the target and outgrowths formed as a result of nucleation and growth processes on the substrate and/or the film surface. Where both types of surface feature occur on a particular film the outgrowths are always more numerous. The density of outgrowths is strongly related to the deposition parameters and, as a consequence, with the film growth mechanism.

Crystalline Orientation Control for Bi-Sr-Ca-Cu-O Thin Films Prepared on (110)SrTiO3by Coevaporation

1991 ◽  
Vol 30 (Part 2, No. 6A) ◽  
pp. L1006-L1008 ◽  
Author(s):  
Yoshiki Ishizuka ◽  
Yoshiaki Terashima ◽  
Tadao Miura
Keyword(s):  
Thin Films ◽  
Crystalline Orientation ◽  
Orientation Control

Applications of Photoelectron Microscopy

1976 ◽  
Vol 34 ◽  
pp. 506-507
Author(s):  
William J. Baxter
Keyword(s):  
Electron Microscopy ◽  
Thermal Decomposition ◽  
Chemical Composition ◽  
Ultraviolet Radiation ◽  
Thin Layer ◽  
Edge Effects ◽  
Electron Optics ◽  
Surface Layers ◽  
Crystalline Orientation ◽  
Fluorescent Screen

In this form of electron microscopy, photoelectrons emitted from a metal by ultraviolet radiation are accelerated and imaged onto a fluorescent screen by conventional electron optics. image contrast is determined by spatial variations in the intensity of the photoemission. The dominant source of contrast is due to changes in the photoelectric work function, between surfaces of different crystalline orientation, or different chemical composition. Topographical variations produce a relatively weak contrast due to shadowing and edge effects.Since the photoelectrons originate from the surface layers (e.g. ∼5-10 nm for metals), photoelectron microscopy is surface sensitive. Thus to see the microstructure of a metal the thin layer (∼3 nm) of surface oxide must be removed, either by ion bombardment or by thermal decomposition in the vacuum of the microscope.

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