scholarly journals Surface Dynamics Transition of Vacuum Vapor Deposited CH3NH3PbI3 Perovskite Thin Films

2018 ◽  
Vol 2018 ◽  
pp. 1-7
Author(s):  
Yunyan Liu ◽  
Hongsheng Song ◽  
Junshan Xiu ◽  
Meiling Sun ◽  
Dong Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Film Growth ◽  
Growth Dynamics ◽  
Growth Exponent ◽  
Dynamic Scaling ◽  
Scaling Exponent ◽  
Surface Dynamics ◽  
Second Stage ◽  
Two Stages

The growth dynamics of CH3NH3PbI3 perovskite thin films on ITO covered glass substrate were investigated. The evolution of the film could be divided into two stages. A mound-like surface was obvious at the first stage. Stable dynamic scaling was observed for thicker films at the second stage. Through analyzing the scaling exponent, growth exponent β, and 2D fast Fourier transform, it is concluded that, at the second stage, the growth mechanism of mound formation does not play a major role, and the film growth mechanism can be described by Mullins diffusion equation.

Growth behavior of evaporated porous thin films

2002 ◽  
Vol 17 (11) ◽  
pp. 2904-2911 ◽  
Author(s):  
D. Vick ◽  
T. Smy ◽  
M. J. Brett
Keyword(s):  
Thin Films ◽  
Academic Motivation ◽  
Film Growth ◽  
Photonic Band Gap ◽  
Growth Dynamics ◽  
Growth Behavior ◽  
Three Dimensions ◽  
High Porosity ◽  
Physical Constraints ◽  
Deposition Parameters

Recent experimental work by a number of researchers has demonstrated that unusual high porosity thin films may be obtained in physical deposition systems by combining glancing angle deposition with in situ substrate motion control. The microstructure of these films consists of isolated columns engineered into shapes such as helices, posts, or chevrons. Due to the isolated nature of the columns, the films present a unique opportunity to study fundamental thin film growth behavior and, in particular, the influence of the self-shadowing mechanism in three dimensions. Apart from this academic motivation, there is the need to characterize the physical constraints imposed on the engineering of these films. In particular, this study will have implications for the realization of isolated, periodically arranged nanostructures envisioned for certain applications such as photonic band gap crystals. Results from an ongoing study of growth dynamics, morphology, porosity, and scaling behavior, and the dependence of these features on deposition parameters are presented.

DYNAMIC SCALING PHENOMENA IN DIAMOND FILM GROWTH

2001 ◽  
Vol 08 (03n04) ◽  
pp. 347-351 ◽  
Author(s):  
M. CATTANI ◽  
M. C. SALVADORI
Keyword(s):  
Chemical Vapor Deposition ◽  
Differential Equations ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Film Growth ◽  
Diamond Films ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
Dynamic Scaling ◽  
Diamond Film Growth

In this paper we investigate how the growth dynamics of diamond films, synthesized by plasma-enhanced chemical vapor deposition, can be explained within the framework of the Edwards–Wilkinson and Kardar–Parisi–Zhang stochastic differential equations.

Thermodynamic Stability of Ptal Thin Films on GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
Dae-Hong Ko ◽  
Robert Sinclair
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Second Stage ◽  
Sequential Deposition ◽  
Low Temperature Annealing ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
C 30 ◽  
Two Stages ◽  
Thermal Stability Of

ABSTRACTThe thermal stability of PtAl thin films on GaAs substrates has been studied using transmission electron microscopy and Auger electron spectroscopy. The PtAl thin films were formed by sequential deposition of discrete Pt and Al layers on GaAs by e-beam evaporation followed by subsequent annealing processes. Interfacial reactions in the Al/Pt/GaAs system proceed in two stages. Upon low temperature annealing Pt and GaAs react to form PtGa and PtAs2. Further high temperature annealing causes PtGa, PtAs2 and Al to react together producing the desired PtAl on GaAs. We observed solid-phase epitaxial regrowth of GaAs during the second stage of reaction. The PtAl/GaAs interface is determined to be thermally stable during an 800°C/30 min. anneal, while remaining morphologically uniform on GaAs.

Influence of Surface Energy on Ni-Fe Thin Films Formation Process

2019 ◽  
Vol 946 ◽  
pp. 228-234 ◽  
Author(s):  
T.I. Zubar ◽  
A.V. Trukhanov ◽  
D.A. Vinnik
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Surface Energy ◽  
Growth Mechanism ◽  
Microstructure Evolution ◽  
Direct Current ◽  
Film Growth ◽  
Binding Energies ◽  
Layer By Layer ◽  
Technological Parameters

The Ni-Fe thin films were produced via electrodeposition in four different modes - direct current, and three types of pulse-modes with different pulse duration onto Au sublayer. The correlation between technological parameters of the electrodeposition and microstructure was demonstrated. Analysis of microstructure evolution revealed an un-expected changing of the film growth mechanism from “island” to “layer-by-layer” with the decreasing of the grain size less than 10 nm. Explanation was found in binding energies competition, that has been defined using the unique AFM method, based on recording the angle of the cantilever twist, when scanning in contact with the surface.

Crystalline Orientation Control in Bi-Sr-Ca-Cu-O Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Yoshiki Ishizuka ◽  
Yoshiaki Terashima ◽  
Tadao Miura
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Growth Mechanism ◽  
Oxygen Plasma ◽  
Film Growth ◽  
Plasma Condition ◽  
Crystalline Orientation ◽  
Orientation Control

ABSTRACTBi-Sr-Ca-Cu-0 thin films were prepared on (110)SrTiO3 by coevaporation with rf oxygen plasma. The non-(00n) crystalline orientations were formed in the Bi2 Sr2Ca2Cu3Oy1 Bi2Sr2 CaCu2Oy2 and Bi2Sr2CuOy3 phases. Furthermore, it was confirmed that the chemical composition and the oxygen plasma condition influenced the crystalline orientation. On the basis of these results, a new idea for the film growth mechanism is proposed.

Growth of TiO2 Thin Films by Atomic Layer Deposition (ALD)

2016 ◽  
Vol 1133 ◽  
pp. 352-356 ◽  
Author(s):  
Rosniza Hussin ◽  
Kwang Leong Choy ◽  
Xiang Hui Hou
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Film Growth ◽  
Atomic Layer ◽  
Titanium Isopropoxide ◽  
Steel Plates ◽  
Important Material ◽  
Glass Slides ◽  
Layer Deposition

Ceramic oxide thin films are an important material, with applications in many areas of science and technology. Titanium oxide (TiO2) is also a well-known and important material for applications such as gas sensors [1], photocatalysis materials [3], and electrochemicals [1], due to its self-cleaning [2], good corrosion resistance and biocompatibility. Atomic Layer Deposition (ALD) is a nanotechnology tool that is used for the deposition of nanostructured thin films. The unique advantage of ALD is the self-limiting film growth mechanism, which offers attractive properties, simple and accurate film thickness control, sharp interfaces, uniformity over large areas, excellent conformality, good reproducibility, a multilayer processing capability, and high quality films at low temperatures [3, 4]. TiO2 thin films were grown using TTIP (Titanium isopropoxide) ALD on silicon wafers, glass slides, and stainless steel plates in order to study the effect of substrates on the growth of TiO2. In order to achieve the desired advantages of using TTIP, a series of experiments were performed to study the growth mechanism of TiO2 thin films using TTIP and H2O by ALD.

Growth Behaviour of Engineered Porous Thin Films – Measurement and Modeling

2000 ◽  
Vol 648 ◽  
Author(s):  
D. Vick ◽  
T. Smy ◽  
B. Dick ◽  
S. Kennedy ◽  
M. J. Brett
Keyword(s):  
Thin Films ◽  
Academic Motivation ◽  
Film Growth ◽  
Growth Dynamics ◽  
Three Dimensions ◽  
High Porosity ◽  
Growth Behaviour ◽  
Physical Constraints ◽  
Deposition Parameters ◽  
Physical Deposition

AbstractRecent experimental work has demonstrated that unique high porosity thin films may be ob- tained in physical deposition systems by combining glancing angle deposition with in situ sub-strate motion control [1-7]. The microstructure of these films consists of isolated columns engineered into shapes such as helices, posts, or chevrons. Due to the isolated nature of the columns, the films present a unique opportunity to study fundamental thin film growth behaviour and, in particular, the influence of the self shadowing mechanism in three dimensions. Apart from this academic motivation, there is the need to characterize the physical constraints imposed on the engineering of these films. In particular, this study will have implications for the realization of isolated, periodically arranged nanostructures envisioned for certain applications. Preliminary results from an ongoing study of growth dynamics, morphology, porosity, and scaling behaviour, and the dependence of these features on deposition parameters are presented below.

Growth and Properties of Carbon Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Z. John Zhang ◽  
Peidong Yang ◽  
Charles M. Lieber
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Carbon Nitride ◽  
Single Phase ◽  
Surface Reaction ◽  
Film Growth ◽  
Laser Deposition ◽  
Carbon And Nitrogen ◽  
532 Nm ◽  
Limiting Value

AbstractRecent research on carbon nitride thin films grown using pulsed laser deposition combined with atomic beam techniques is reviewed. the composition, growth mechanism and phases of these films have been systematically investigated. the nitrogen composition was found to increase to a limiting value of 50% as the fluence was decreased for laser ablation at both 532 nm and 248 nm wavelengths. Time of flight mass spectroscopy investigations of the ablation products have shown that the fluence variations affect primarily the yield of the carbon reactant. these experiments demonstrate that the overall film growth rate determines the average nitrogen composition, and furthermore, suggest that a key step in the growth mechanism involves a surface reaction between carbon and nitrogen. INfrared spectroscopy has been used to assess the phases present in the carbon nitride thin films as a function of the overall nitrogen content. these measurements have shown that a cyanogen-like impurity occurs in films with nitrogen compositions greater than 30%. Studies of thermal annealing have shown, however, that this impurity phase can be eliminated to yield a single phase C2N material. IN addition, systematic studies of the electrical resistivity and thermal conductivity of the carbon nitride films are discussed.

Examination of Particles and Outgrowths on the Surface of Epitaxial Yba2Cu3O7 Thin Films

1994 ◽  
Vol 341 ◽  
Author(s):  
M. Grant Norton ◽  
Rand R. Biggers ◽  
I. Maartense ◽  
E. K. Moser ◽  
Jeff L. Brown
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Growth Mechanism ◽  
Film Growth ◽  
Pulsed Laser ◽  
Film Surface ◽  
Nucleation And Growth ◽  
Laser Deposition ◽  
Scanning Probe ◽  
Deposition Parameters

AbstractThe surface morphology of Yba2Cu3O7 thin films formed on (001)-oriented LaAlO3 substrates by pulsed-laser deposition has been examined using electron and scanning probe microscopies. The observed surface features can be divided into two types: particles formed as a result of material (often molten) ejected from the target and outgrowths formed as a result of nucleation and growth processes on the substrate and/or the film surface. Where both types of surface feature occur on a particular film the outgrowths are always more numerous. The density of outgrowths is strongly related to the deposition parameters and, as a consequence, with the film growth mechanism.

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