Growth and Properties of Carbon Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Z. John Zhang ◽  
Peidong Yang ◽  
Charles M. Lieber
Keyword(s):  
Thin Films ◽  
Growth Mechanism ◽  
Carbon Nitride ◽  
Single Phase ◽  
Surface Reaction ◽  
Film Growth ◽  
Laser Deposition ◽  
Carbon And Nitrogen ◽  
532 Nm ◽  
Limiting Value

AbstractRecent research on carbon nitride thin films grown using pulsed laser deposition combined with atomic beam techniques is reviewed. the composition, growth mechanism and phases of these films have been systematically investigated. the nitrogen composition was found to increase to a limiting value of 50% as the fluence was decreased for laser ablation at both 532 nm and 248 nm wavelengths. Time of flight mass spectroscopy investigations of the ablation products have shown that the fluence variations affect primarily the yield of the carbon reactant. these experiments demonstrate that the overall film growth rate determines the average nitrogen composition, and furthermore, suggest that a key step in the growth mechanism involves a surface reaction between carbon and nitrogen. INfrared spectroscopy has been used to assess the phases present in the carbon nitride thin films as a function of the overall nitrogen content. these measurements have shown that a cyanogen-like impurity occurs in films with nitrogen compositions greater than 30%. Studies of thermal annealing have shown, however, that this impurity phase can be eliminated to yield a single phase C2N material. IN addition, systematic studies of the electrical resistivity and thermal conductivity of the carbon nitride films are discussed.

Pulsed laser deposition of carbon nitride thin films in nitrogen gas ambient

1997 ◽  
Vol 12 (12) ◽  
pp. 3376-3379 ◽  
Author(s):  
Masayuki Okoshi ◽  
Hiroshi Kumagai ◽  
Koichi Toyoda
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Nitrogen Concentration ◽  
Laser Deposition ◽  
Graphite Target ◽  
Nitrogen Gas ◽  
Third Harmonic ◽  
X Ray ◽  
532 Nm

Carbon nitride thin films have been successfully deposited by ablating a graphite target (99.999%) in nitrogen gas ambient using the second (532 nm) or third (355 nm) harmonic of a Q-switched Nd : YAG laser. Carbon nitride films consisting of approximately 40% nitrogen were obtained at 7.5 × 10−3 Pa of nitrogen gas pressure using the third harmonic laser. The C–N chemical bond in the films was observed by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Ellipsometric studies revealed that the refractive index of the fabricated films decreased with increasing nitrogen concentration.

Examination of Particles and Outgrowths on the Surface of Epitaxial Yba2Cu3O7 Thin Films

1994 ◽  
Vol 341 ◽  
Author(s):  
M. Grant Norton ◽  
Rand R. Biggers ◽  
I. Maartense ◽  
E. K. Moser ◽  
Jeff L. Brown
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Growth Mechanism ◽  
Film Growth ◽  
Pulsed Laser ◽  
Film Surface ◽  
Nucleation And Growth ◽  
Laser Deposition ◽  
Scanning Probe ◽  
Deposition Parameters

AbstractThe surface morphology of Yba2Cu3O7 thin films formed on (001)-oriented LaAlO3 substrates by pulsed-laser deposition has been examined using electron and scanning probe microscopies. The observed surface features can be divided into two types: particles formed as a result of material (often molten) ejected from the target and outgrowths formed as a result of nucleation and growth processes on the substrate and/or the film surface. Where both types of surface feature occur on a particular film the outgrowths are always more numerous. The density of outgrowths is strongly related to the deposition parameters and, as a consequence, with the film growth mechanism.

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Pulsed Laser Deposition (PLD) Technique to Prepare Biocompatible Thin Films

2006 ◽  
Vol 49 ◽  
pp. 56-61 ◽  
Author(s):  
Joseph J. Beltrano ◽  
Lorenzo Torrisi ◽  
Anna Maria Visco ◽  
Nino Campo ◽  
E. Rapisarda
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Target Material ◽  
Xrd Analysis ◽  
Spot Size ◽  
Laser Deposition ◽  
Laser Source ◽  
Medical Field ◽  
Hot Plasma ◽  
532 Nm

A Nd:YAG laser is employed to ablate different materials useful in the bio-medical field. The laser source operates in the IR (1064 nm), VIS (532 nm) and UV (355 nm) regions with a pulse duration of 3-9 ns, a pulse energy of 3-300 mJ, a spot size of 1 mm2 and a repetition rate of 1- 30 Hz. Target material of interest are Titanium, Carbon, Hydroxyapatite (HA) and Polyethylene (PE). Laser irradiation occurs in vacuum, where hot plasma is generated, and thin films are deposited on near substrates. Generally, substrates of silicon, titanium, titanium-alloys and polymers were employed. Biocompatible thin films are investigated with different surface techniques, such as IR spectroscopy, Raman spectroscopy, XRD analysis and SEM investigations. Depending of the kind of possible application, films require special properties concerning the grain size, porosity, uniformity, wetting, hardness, adhesion, crystallinity and composition. The obtained results will be presented and discussed with particular regard to HA..

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Laser deposition of thin films with varying substrate temperature during film growth

2002 ◽  
Vol 197-198 ◽  
pp. 348-351 ◽  
Author(s):  
W.D Song ◽  
M.H Hong ◽  
Y.F Lu ◽  
W.J Wang ◽  
S.M Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Film Growth ◽  
Laser Deposition

Pulsed laser deposition of carbon nitride thin films from graphite targets

Carbon ◽  
1998 ◽  
Vol 36 (5-6) ◽  
pp. 771-774 ◽  
Author(s):  
Y. Suda ◽  
T. Nakazono ◽  
K. Ebihara ◽  
K. Baba ◽  
S. Aoqui
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Carbon Nitride ◽  
Pulsed Laser ◽  
Laser Deposition

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

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