Surface Chemistry and Mechanism of Atomic Layer Growth of GaAs

1991 ◽  
Vol 222 ◽  
Author(s):  
Ming L. Yu ◽  
Nicholas I. Buchan ◽  
Ryutaro Souda ◽  
Thomas F. Kuech
Keyword(s):  
Surface Chemistry ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Reaction Selectivity ◽  
Compound C ◽  
Site Blocking

ABSTRACTThe success In attaining atomic layer epitaxy (ALE) of GaAs depends critically on the choice of the Ga precursor. Three systems were examined: trimethylgallium (TMGa) and diethylgallium chloride (DEGaCI) both of which give ALE, and triethylgallium (TEGa) which does not. We compared the surface reactions of these compounds on GaAs(100) and concluded that there was no evidence for reaction selectivity between Ga and As sites to cause ALE. Site blocking by the ligands on the Ga precursors alone also could not provide a self-limiting Ga deposition for ALE. We found evidence of a new mechanism by which self-limiting deposition of Ga resulted when the incoming Ga flux by the adsorption of Ga precursors was counter-balanced by an outgoing flux of Ga containing reaction product. For TMGa and DEGaCI with which ALE is successful, the products are CH3Ga and GaCl, respectively. For TEGa, the corresponding compound C2H5Ga was not formed.

Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges

1995 ◽  
Vol 387 ◽  
Author(s):  
J. L. Hoyt ◽  
P. Kuo ◽  
K. Rim ◽  
J. J. Welser ◽  
R. M. Emerson ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Atomic Layer ◽  
Layer Growth ◽  
Point Of View ◽  
Atomic Layer Epitaxy ◽  
Future Research ◽  
Layer By Layer ◽  
Limited Growth ◽  
Measurement And Control

AbstractMaterial and device challenges for Rapid Thermal Processing (RTP) of heterostructures are discussed, focusing on RTP-based epitaxy in the Si/Si1−xGex system. While RTP-based heteroepitaxy offers enhanced processing flexibility, it also poses significant challenges for temperature measurement and control. Several examples of Si/Si1−xGex device structures are discussed from the point of view of the sensitivity of device parameters to variations in layer thickness and composition. The measured growth kinetics for Si and Si1−xGex are then used to estimate growth temperature tolerances for these structures. Demanding applications are expected to require temperature control and uniformity to within 0.5°C.Future research challenges include the fabrication of structures with monolayer thickness control using self-limited growth techniques. Atomic layer epitaxy (ALE) is a well-known example of such a growth technique. In ALE, the wafer is cyclically exposed to different reactants, to achieve layer-by-layer growth. An RTP-based atomic layer epitaxy process, and its application to the growth of CdTe films, is briefly discussed. The extension to Column IV alloys follows readily. The RTP-based process enables self-limited growth for precursor combinations for which isothermal ALE is not feasible.

Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 2B) ◽  
pp. L236-L238 ◽  
Author(s):  
Kuninori Kitahara ◽  
Nobuyuki Ohtsuka ◽  
Toshihiko Ashino ◽  
Masashi Ozeki ◽  
Kazuo Nakajima
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Gaas On Si

Surface Chemistry for Atomic Layer Growth

1996 ◽  
Vol 100 (31) ◽  
pp. 13121-13131 ◽  
Author(s):  
S. M. George ◽  
A. W. Ott ◽  
J. W. Klaus
Keyword(s):  
Surface Chemistry ◽  
Atomic Layer ◽  
Layer Growth

The surface chemistry and kinetics of GaAs atomic layer epitaxy

1993 ◽  
Vol 225 (1-2) ◽  
pp. 17-25 ◽  
Author(s):  
J.Randall Creighton ◽  
Barbara A. Bansenauer
Keyword(s):  
Surface Chemistry ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Kinetics Of

Surface chemistry of diethylsilane and diethylgermane on Si(100): An atomic layer epitaxy approach

1994 ◽  
Vol 12 (4) ◽  
pp. 2265-2270 ◽  
Author(s):  
A. Mahajan ◽  
B. K. Kellerman ◽  
N. M. Russell ◽  
S. Banerjee ◽  
A. Campion ◽  
...  
Keyword(s):  
Surface Chemistry ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Sulfur-Passivation Pretreatment of GaAs Surface for Layer-by-Layer Growth and Atomic Layer Epitaxy of ZnSe by MOMBE

1990 ◽  
Author(s):  
Shigeo FUJITA ◽  
Yi-hong WU ◽  
Yasunori MIYAZAKI ◽  
Takashi TOYODA ◽  
Yoichi KAWAKAMI ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Layer Growth ◽  
Gaas Surface ◽  
Atomic Layer Epitaxy ◽  
Layer By Layer ◽  
Sulfur Passivation

Atomic Layer Deposition of thin Films Using Sequential Surface Reactions

2000 ◽  
Vol 616 ◽  
Author(s):  
S. M. George ◽  
J.D. Ferguson ◽  
J.W. Klaus
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Single Element ◽  
Transmission Electron ◽  
Layer Deposition

AbstractThin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.

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