Surface chemistry of diethylsilane and diethylgermane on Si(100): An atomic layer epitaxy approach

1994 ◽  
Vol 12 (4) ◽  
pp. 2265-2270 ◽  
Author(s):  
A. Mahajan ◽  
B. K. Kellerman ◽  
N. M. Russell ◽  
S. Banerjee ◽  
A. Campion ◽  
...  
Keyword(s):  
Surface Chemistry ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

The surface chemistry and kinetics of GaAs atomic layer epitaxy

1993 ◽  
Vol 225 (1-2) ◽  
pp. 17-25 ◽  
Author(s):  
J.Randall Creighton ◽  
Barbara A. Bansenauer
Keyword(s):  
Surface Chemistry ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Kinetics Of

Surface Chemistry and Mechanism of Atomic Layer Growth of GaAs

1991 ◽  
Vol 222 ◽  
Author(s):  
Ming L. Yu ◽  
Nicholas I. Buchan ◽  
Ryutaro Souda ◽  
Thomas F. Kuech
Keyword(s):  
Surface Chemistry ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Layer Epitaxy ◽  
Reaction Selectivity ◽  
Compound C ◽  
Site Blocking

ABSTRACTThe success In attaining atomic layer epitaxy (ALE) of GaAs depends critically on the choice of the Ga precursor. Three systems were examined: trimethylgallium (TMGa) and diethylgallium chloride (DEGaCI) both of which give ALE, and triethylgallium (TEGa) which does not. We compared the surface reactions of these compounds on GaAs(100) and concluded that there was no evidence for reaction selectivity between Ga and As sites to cause ALE. Site blocking by the ligands on the Ga precursors alone also could not provide a self-limiting Ga deposition for ALE. We found evidence of a new mechanism by which self-limiting deposition of Ga resulted when the incoming Ga flux by the adsorption of Ga precursors was counter-balanced by an outgoing flux of Ga containing reaction product. For TMGa and DEGaCI with which ALE is successful, the products are CH3Ga and GaCl, respectively. For TEGa, the corresponding compound C2H5Ga was not formed.

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Steric hindrance effects in atomic layer epitaxy of InAs

1989 ◽  
Vol 55 (3) ◽  
pp. 244-246 ◽  
Author(s):  
Weon G. Jeong ◽  
E. P. Menu ◽  
P. D. Dapkus
Keyword(s):  
Steric Hindrance ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Growth Processes of GaAs Grown by Atomic Layer Epitaxy Revealed by Atomic Force Microscopy

1994 ◽  
Vol 33 (Part 2, No. 9B) ◽  
pp. L1292-L1294 ◽  
Author(s):  
Haruki Yokoyama ◽  
Masafumi Tanimoto ◽  
Masanori Shinohara ◽  
Naohisa Inoue
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Growth Processes ◽  
Force Microscopy ◽  
Atomic Force

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films
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