Modulation Doped Si/SiGe Heterostructures

1991 ◽  
Vol 220 ◽  
Author(s):  
F. Schäffler ◽  
Daimler-Benz AG
Keyword(s):  
Room Temperature ◽  
Field Effect Transistor ◽  
High Electron ◽  
Dopant Distribution ◽  
Band Engineering ◽  
Main Emphasis ◽  
Device Applications ◽  
Effect Transistor ◽  
P Type ◽  
Thermal Stability Of

ABSTRACTAn overview of SiGe-based, modulation doped heterostructures is given. Strained layer handling, a prerequisite for realizing both n- and p-type devices, Is treated in terms of band engineering. The main emphasis is put on recent results obtained with high-electron mobility n-type Si/SiGe structures. Hall, Shubnikov-deHaas, and cyclotron resonance measurements are presented. The thermal stability of the heterostructures and the dopant distribution are treated with respect to device applications. Room temperature and 77K dc-measurements on very recent modulation doped field effect transistor (MODFET) implementations using implanted source/drain contacts are discussed. Device concepts with n- and p-type MODFETs combined in a superior complementary layout (CMODFET) are proposed.

ZnO-Based n-Channel Junction Field-Effect Transistor With Room-Temperature-Fabricated Amorphous p-Type $\hbox{ZnCo}_{2}\hbox{O}_{4}$ Gate

2012 ◽  
Vol 33 (5) ◽  
pp. 676-678 ◽  
Author(s):  
Friedrich-Leonhard Schein ◽  
Holger von Wenckstern ◽  
Heiko Frenzel ◽  
Marius Grundmann
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Type Formula ◽  
Effect Transistor ◽  
P Type

STRAINED SILICON GERMANIUM HETEROSTRUCTURES FOR DEVICE APPLICATIONS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4189-4194 ◽  
Author(s):  
E. KASPER
Keyword(s):  
Silicon Germanium ◽  
Elastic Strain ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Critical Thickness ◽  
Type Ii ◽  
Material Development ◽  
Device Applications ◽  
Effect Transistor ◽  
Key Questions

Silicon Germanium is lattice mismatched to Silicon by up to 4.2% depending on the Ge content. Up to a critical thickness elastic strain accommodates the mismatch. The band ordering of SiGe/Si interfaces is strongly influenced by the strain shifting the band ordering from flat conduction band to a type II ordering when proper strain adjustment is performed. As device examples the heterobipolartransistor, hetero field effect transistor and room temperature Esaki tunneling are treated. As key questions for further material development are identified the growth and processing of ultrametastable layers and the strain adjustment by thin virtual substrates.

Mott Transition Field Effect Transistor: Experimental Results

1999 ◽  
Vol 574 ◽  
Author(s):  
A. G. Schrott ◽  
J. A. Misewich ◽  
B. A. Scott ◽  
A. Gupta ◽  
D. M. Newns ◽  
...  
Keyword(s):  
Room Temperature ◽  
Field Effect Transistor ◽  
Mott Transition ◽  
Oxide Materials ◽  
Gate Electrodes ◽  
Perovskite Materials ◽  
Insulator Metal Transition ◽  
Transition Channel ◽  
Effect Transistor ◽  
P Type

AbstractIn this paper we describe the fabrication of oxide based devices similar in architecture to a conventional FET with source, drain, and gate electrodes and a channel. This distinctive characteristic of our device is the use of a channel material capable of undergoing a field-induced Mott insulator-metal transition at room temperature. Lithographic techniques developed for oxide materials have been combined with pulsed laser deposition of perovskite materials onto single-crystal strontium titanate (STO) substrates to fabricate these devices. Materials chosen for the Mott transition channel include La2CuO4 (LCO) and YBCO, p-type; and Nd2CuO4, n-type.

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

High-transconductance p-type SiGe modulation-doped field-effect transistor

1995 ◽  
Vol 31 (8) ◽  
pp. 680 ◽  
Author(s):  
M. Arafa ◽  
K. Ismail ◽  
P. Fay ◽  
J.O. Chu ◽  
B.S. Meyerson ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
P Type

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

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