ZnO-Based n-Channel Junction Field-Effect Transistor With Room-Temperature-Fabricated Amorphous p-Type $\hbox{ZnCo}_{2}\hbox{O}_{4}$ Gate

2012 ◽  
Vol 33 (5) ◽  
pp. 676-678 ◽  
Author(s):  
Friedrich-Leonhard Schein ◽  
Holger von Wenckstern ◽  
Heiko Frenzel ◽  
Marius Grundmann
Keyword(s):  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Type Formula ◽  
Effect Transistor ◽  
P Type

High-transconductance p-type SiGe modulation-doped field-effect transistor

1995 ◽  
Vol 31 (8) ◽  
pp. 680 ◽  
Author(s):  
M. Arafa ◽  
K. Ismail ◽  
P. Fay ◽  
J.O. Chu ◽  
B.S. Meyerson ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
High Transconductance ◽  
P Type

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

scholarly journals Electronic Sensing Platform (ESP) Based on Open-Gate Junction Field-Effect Transistor (OG-JFET) for Life Science Applications: Design, Modeling and Experimental Results

Sensors ◽  
2021 ◽  
Vol 21 (22) ◽  
pp. 7491
Author(s):  
Abbas Panahi ◽  
Deniz Sadighbayan ◽  
Ebrahim Ghafar-Zadeh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Comsol Multiphysics ◽  
Subtle Difference ◽  
Back Gate ◽  
Sensing Platform ◽  
Type Layer ◽  
Type Contact ◽  
Effect Transistor ◽  
P Type

This paper presents a new field-effect sensor called open-gate junction gate field-effect transistor (OG-JFET) for biosensing applications. The OG-JFET consists of a p-type channel on top of an n-type layer in which the p-type serves as the sensing conductive layer between two ohmic contacted sources and drain electrodes. The structure is novel as it is based on a junction field-effect transistor with a subtle difference in that the top gate (n-type contact) has been removed to open the space for introducing the biomaterial and solution. The channel can be controlled through a back gate, enabling the sensor’s operation without a bulky electrode inside the solution. In this research, in order to demonstrate the sensor’s functionality for chemical and biosensing, we tested OG-JFET with varying pH solutions, cell adhesion (human oral neutrophils), human exhalation, and DNA molecules. Moreover, the sensor was simulated with COMSOL Multiphysics to gain insight into the sensor operation and its ion-sensitive capability. The complete simulation procedures and the physics of pH modeling is presented here, being numerically solved in COMSOL Multiphysics software. The outcome of the current study puts forward OG-JFET as a new platform for biosensing applications.

Spin transport in epitaxial Fe3O4/GaAs lateral structured device

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  
Keyword(s):  
Data Storage ◽  
Field Effect ◽  
Room Temperature ◽  
Field Effect Transistor ◽  
Spin Transport ◽  
Spintronic Devices ◽  
Spin Dependent Transport ◽  
Effect Transistor ◽  
Dependent Transport ◽  
Further Development

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.

scholarly journals Diamond Based Field-Effect Transistors of Zr Gate withSiNxDielectric Layers

2015 ◽  
Vol 2015 ◽  
pp. 1-5 ◽  
Author(s):  
W. Wang ◽  
C. Hu ◽  
S. Y. Li ◽  
F. N. Li ◽  
Z. C. Liu ◽  
...  
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Conduction Channel ◽  
Effect Transistor ◽  
P Type ◽  
Interface Bond ◽  
Transfer Properties

Investigation of Zr-gate diamond field-effect transistor withSiNxdielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm−2and 24.4 cm2·V−1·s−1, respectively. The output and transfer properties indicate the preservation of conduction channel because of theSiNxdielectric layer, which may be explained by the interface bond of C-N. High voltage up to −200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

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