Characterization of Si1−xGex/Si Heterostructures Using Optically-Detected Magnetic Resonance

ABSTRACTSi1−xGex/Si heterostructures with varying layer-thicknesses have been characterized using photoluminescence and magnetic resonance detected on photoluminescence. Three of the four samples studied exhibit sharp photoluminescence bands at different energies. For a 120 Å Si/40 Å Si1−xGex heterostructure, magnetic resonance of an electron in the Si and of a hole in the Sil. xGex layers were observed. These results indicate cross-interface, or Type II, excitonic recombination. Further, anisotropie magnetic resonance spectra indicate the presence of dangling-bonds defects in the heterostructures.