Spin-forbidden Δms=2 transitions in the optically detected magnetic-resonance spectra of excitons bound at complex neutral defects in GaP

1988 ◽  
Vol 37 (15) ◽  
pp. 8795-8804 ◽  
Author(s):  
M. Godlewski ◽  
W. M. Chen ◽  
B. Monemar
Keyword(s):  
Magnetic Resonance ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Magnetic Resonance Spectra

Theory of optically detected magnetic resonance spectra of radical pairs

1982 ◽  
Vol 71 (1) ◽  
pp. 1-8 ◽  
Author(s):  
A.B. Doktorov ◽  
O.A. Anisimov ◽  
A.I. Burshtein ◽  
Yu.N. Molin
Keyword(s):  
Magnetic Resonance ◽  
Radical Pairs ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Magnetic Resonance Spectra

Characterization of Si1−xGex/Si Heterostructures Using Optically-Detected Magnetic Resonance

1991 ◽  
Vol 220 ◽  
Author(s):  
T. A. Kennedy ◽  
E. R. Glaser ◽  
J. M. Trombetta ◽  
K. L. Wang ◽  
C. H. Chern ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Type Ii ◽  
Dangling Bonds ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Excitonic Recombination ◽  
Magnetic Resonance Spectra

ABSTRACTSi1−xGex/Si heterostructures with varying layer-thicknesses have been characterized using photoluminescence and magnetic resonance detected on photoluminescence. Three of the four samples studied exhibit sharp photoluminescence bands at different energies. For a 120 Å Si/40 Å Si1−xGex heterostructure, magnetic resonance of an electron in the Si and of a hole in the Sil. xGex layers were observed. These results indicate cross-interface, or Type II, excitonic recombination. Further, anisotropie magnetic resonance spectra indicate the presence of dangling-bonds defects in the heterostructures.

Sign in / Sign up

Export Citation Format

Share Document