Exchange interactions of excitons localized at opposite interfaces in type-II GaAs/AlAs superlattices: Optically detected magnetic resonance and level anticrossing

JETP Letters ◽  
1996 ◽  
Vol 64 (10) ◽  
pp. 754-759 ◽  
Author(s):  
P. G. Baranov ◽  
N. G. Romanov ◽  
A. Hofstaetter ◽  
A. Scharmann ◽  
C. Schnorr ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Exchange Interactions ◽  
Type Ii ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically Detected Magnetic Resonance Study of a Type-ii GaAs-AlAs Multiple Quantum Well

1988 ◽  
Vol 61 (1) ◽  
pp. 129-132 ◽  
Author(s):  
H. W. van Kesteren ◽  
E. C. Cosman ◽  
F. J. A. M. Greidanus ◽  
P. Dawson ◽  
K. J. Moore ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Type Ii ◽  
Magnetic Resonance Study ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Characterization of Si1−xGex/Si Heterostructures Using Optically-Detected Magnetic Resonance

1991 ◽  
Vol 220 ◽  
Author(s):  
T. A. Kennedy ◽  
E. R. Glaser ◽  
J. M. Trombetta ◽  
K. L. Wang ◽  
C. H. Chern ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Type Ii ◽  
Dangling Bonds ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Excitonic Recombination ◽  
Magnetic Resonance Spectra

ABSTRACTSi1−xGex/Si heterostructures with varying layer-thicknesses have been characterized using photoluminescence and magnetic resonance detected on photoluminescence. Three of the four samples studied exhibit sharp photoluminescence bands at different energies. For a 120 Å Si/40 Å Si1−xGex heterostructure, magnetic resonance of an electron in the Si and of a hole in the Sil. xGex layers were observed. These results indicate cross-interface, or Type II, excitonic recombination. Further, anisotropie magnetic resonance spectra indicate the presence of dangling-bonds defects in the heterostructures.

Optically Detected Magnetic Resonance and Double Beam Photoluminescence of CdS/HgS/CdS Nanoparticles

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Cds Nanoparticles ◽  
Electron Hole ◽  
Cladding Layer ◽  
Double Beam ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected ◽  
Cladding Layers ◽  
Hole Recombination

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.

Optically detected magnetic resonance study of SiC:Ti

1985 ◽  
Vol 32 (4) ◽  
pp. 2273-2284 ◽  
Author(s):  
K. M. Lee ◽  
Le Si Dang ◽  
G. D. Watkins ◽  
W. J. Choyke
Keyword(s):  
Magnetic Resonance ◽  
Magnetic Resonance Study ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layers

1997 ◽  
Vol 6 (10) ◽  
pp. 1381-1384 ◽  
Author(s):  
N.T. Son ◽  
E. Sörman ◽  
W.M. Chen ◽  
C. Hallin ◽  
O. Kordina ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Epitaxial Layers ◽  
Magnetic Resonance Studies ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected
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