Studies of Interface Mixing in a Symmetrically Strained Ge/Si Superlattice

1989 ◽  
Vol 148 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet ◽  
K. L. Wang
Keyword(s):  
Activation Energy ◽  
Raman Scattering ◽  
Buffer Layer ◽  
Vacancy Mechanism ◽  
X Ray Diffraction ◽  
X Ray ◽  
Arrhenius Relation ◽  
Interface Mixing ◽  
Interdiffusion Coefficients

ABSTRACTRaman scattering and x ray diffraction were used to study the effects of annealing on a Ge/Si superlattice that had been grown upon a Ge0.4Si0.6 alloy buffer layer which distributes the strain between the layers. Anneals above 910K caused substantial mixing at the Ge-Si interfaces. The interdiffusion coefficients obtained from the x-ray data were found to obey an Arrhenius relation with an activation energy of 3.1±0.2eV. Initial intermixing seems to be dominated by the diffusion of Si atoms into the Ge layers via a vacancy mechanism.

X-Ray and Raman Studies of Interlayer Mixing in SimGem Superlattices

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang
Keyword(s):  
Activation Energy ◽  
Raman Scattering ◽  
Vacancy Mechanism ◽  
Strained Si ◽  
X Ray ◽  
Scattering Measurements ◽  
Intensity Changes ◽  
Interface Mixing ◽  
Interdiffusion Coefficients

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.

scholarly journals Exploring the fundamental effects of deposition time on the microstructure of graphene nanoflakes by Raman scattering and X-ray diffraction

CrystEngComm ◽  
2011 ◽  
Vol 13 (1) ◽  
pp. 312-318 ◽  
Author(s):  
Navneet Soin ◽  
Susanta Sinha Roy ◽  
Christopher O'Kane ◽  
James A. D. McLaughlin ◽  
Teck H. Lim ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Deposition Time ◽  
X Ray Diffraction ◽  
X Ray ◽  
Graphene Nanoflakes

scholarly journals Evidence of a symmetric disordered ice above ~62 GPa from Raman scattering and X-ray diffraction investigations

1996 ◽  
Vol 52 (a1) ◽  
pp. C535-C535
Author(s):  
E. Wolanin ◽  
Ph. Pruzan ◽  
M. Gauthier ◽  
J. C. Chervin ◽  
B. Canny ◽  
...  
Keyword(s):  
Raman Scattering ◽  
X Ray Diffraction ◽  
X Ray

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Magnetic Anisotropy in Electrodeposited CO Films and spin-valves on Gaas Substrates

1999 ◽  
Vol 562 ◽  
Author(s):  
K. Attenborough ◽  
M. Cerisier ◽  
H. Boeve ◽  
J. De Boeck ◽  
G. Borghs ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Buffer Layer ◽  
Structural Properties ◽  
Easy Axis ◽  
Spin Valve ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cu Films ◽  
Gaas Substrates ◽  
Unique Spin

ABSTRACTWe have studied the magnetic and structural properties of thin electrodeposited Co and Cu layers grown directly onto (100) n-GaAs and have investigated the influence of a buffer layer. A dominant fourfold anisotropy with a uniaxial contribution is observed in 10 nm Co electrodeposited films on GaAs. An easy axis is observed in the [001] GaAs direction with two hard axes of differing coercivities parallel to the [011] and [011] directions. For thicker films the easy axes in the [001] direction becomes less pronounced and the fourfold anisotropy becomes less dominant. Co films of similar thicknesses deposited onto an electrodeposited Cu buffer layer were nearly isotropic. From X-ray diffraction 21 nm Co layers on GaAs were found to be hcp with the c-axis tending to be in the plane of the film. The anisotropy is ascribed to the Co/GaAs interface and is held responsible for the unique spin-valve properties seen recently in electrodeposited Co/Cu films.

High-pressure effect on inverse spinel LiCuVO4: X-ray diffraction and Raman scattering

2013 ◽  
Vol 22 (1) ◽  
pp. 016103 ◽  
Author(s):  
Heng-Nan Liang ◽  
Chun-Li Ma ◽  
Fei Du ◽  
Qi-Liang Cui ◽  
Guang-Tian Zou
Keyword(s):  
High Pressure ◽  
Raman Scattering ◽  
Pressure Effect ◽  
X Ray Diffraction ◽  
Inverse Spinel ◽  
X Ray ◽  
High Pressure Effect

Non-uniform distribution of dopant iron ions in TiO2 nanocrystals probed by X-ray diffraction, Raman scattering, photoluminescence and photocatalysis

2015 ◽  
Vol 3 (8) ◽  
pp. 1846-1853 ◽  
Author(s):  
S. Manu ◽  
M. Abdul Khadar
Keyword(s):  
Raman Scattering ◽  
Uniform Distribution ◽  
Semiconductor Nanocrystals ◽  
Iron Ions ◽  
X Ray Diffraction ◽  
Tio2 Nanocrystals ◽  
X Ray ◽  
Practical Applications ◽  
Mechanism Operative

The phenomenon of ‘self-purification’ is a real mechanism operative in nanocrystals and this should be taken into account while doping semiconductor nanocrystals with external impurities for practical applications.

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