Film Deposition Process in Pulse Discharge CVD

1991 ◽  
Vol 219 ◽  
Author(s):  
T. Yoshida ◽  
H. Fujisawa ◽  
T. Hokaya ◽  
Y. Ichikawa ◽  
H. Sakai
Keyword(s):  
Pulse Discharge ◽  
Type A ◽  
Deposition Process ◽  
Film Deposition ◽  
Plasma Parameters ◽  
Film Properties ◽  
Si Solar Cells ◽  
P Type ◽  
Better Than

ABSTRACTTo understand the deposition process of pulse discharge (PD) CVD, we studied spatial distribution and decay of plasma parameters and those of SiH LIF signals. In addition, we studied film properties of a-SiC:H and a-SiGe:H deposited by the PD-CVD. It was found that the quality of p-type a-SiC:H films deposited by the PD-CVD from SiH4+CH4+B3 was better than those of conventional p-type a-SiC:H films. The p-type a-SiC:H films were applied to the p-layer of p-i-n a-Si solar cells, and a conversion efficiency of 12. 3% was obtained for a 1cm2.

Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation

2001 ◽  
Vol 16 (3) ◽  
pp. 633-643 ◽  
Author(s):  
H. Högberg ◽  
J. Birch ◽  
M. P. Johansson ◽  
L. Hultman ◽  
U. Jansson
Keyword(s):  
Epitaxial Growth ◽  
Deposition Process ◽  
Growth Conditions ◽  
Growth Behavior ◽  
Transition Metal Carbide ◽  
Structural Quality ◽  
Metal Carbide ◽  
General Observation ◽  
Better Than

Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 °C, while the epitaxial growth of VC required 200 °C. Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.

Controtle Substitutional Doping of Cdte Thin Films and Cd 1-xMn xTe-CdTe Superlattices

1986 ◽  
Vol 90 ◽  
Author(s):  
R. N. Bicknell ◽  
N. C. Giles ◽  
J. F. Schetzina
Keyword(s):  
Electrical Transport ◽  
Molecular Beam ◽  
Deposition Process ◽  
Film Deposition ◽  
New Technique ◽  
Electrical Transport Properties ◽  
Substitutional Doping ◽  
A New Technique ◽  
P Type ◽  
First Time

ABSTRACTWe report the successful substitutional doping of CdTe epilayers grown by a new technique: photoassisted molecular beam epitaxy, in which the substrate is illuminated during the film deposition process. This new technique was found to produce dramatic changes in the electrical transport properties of the epilayers. In particular, highly conducting n-type and p-type CdTe films have been grown using In and Sb as n-type and p-type dopants,respectively. Photoassisted MBE has also recently been employed to produce for the first time highly conducting CdMnTe epilayers and Cd 1-xMnxTe-CdTe superlattices.

Current Status of thin film HgCdTe: Relationship of Structure and Chemistry to Device Application

1985 ◽  
Vol 47 ◽  
Author(s):  
E. Krikorian
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Device Fabrication ◽  
Film Deposition ◽  
Current Status ◽  
Film Properties ◽  
High Quality ◽  
Device Application

ABSTRACTThis paper addresses the current status of thin film HgCdTe and limitations in the currently achievable thin film properties. The emphasis is placed on Hg1−xCdxTe since this material is presently most seriously considered for infrared devices and particularly resistant to high quality film preparation due to large elemental vapor pressure differences. The current status of thin film HgCdTe is reviewed and the various thin film deposition techniques utilized to prepare HgCdTe thin films are compared. Finally, results are reviewed which still support the claim.that the less investigated technique of bias-sputtering, modified to accommodate deposition in a high partial pressure background of Hg vapor, can yield structurally high quality Hg1−xCdxTe films with device-worthy properties. Significant is the fact that the deposition process still provides the simple and systematic control over all relevant film properties without post-deposition treatment. Such control is required to achieve the desired material for device application. As is also reviewed here, this work was one of the first to demonstrate the ability to use low cost foreign substrates for HgCdTe thin film device fabrication.

EFFECT OF RAPID THERMAL ANNEALING ON THE Mg-DOPED GaN/Si FILM

2006 ◽  
Vol 20 (25n27) ◽  
pp. 4034-4039
Author(s):  
LIPING ZHU ◽  
ZHIZHEN YE ◽  
XIANFENG NI ◽  
ZHE ZHAO ◽  
BINGHUI ZHAO
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
P Type ◽  
Organic Chemical Vapor Deposition ◽  
Better Than ◽  
Mg Doped

Mg -doped GaN films have been successfully prepared on Si (111) substrate by metal-organic chemical vapor deposition (MOCVD). Upon rapid thermal annealing (RTA) treatment, the films showed p-type conductivity with a carrier density of 7.84 cm-3, a mobility of 5.54 cm2V-1s-1, and a resistivity of about 0.144 Ωcm, which were much better than that of the films without rapid thermal annealing (RTA) treatment. It was found that the surface morphology and crystal quality of the obtained p-type GaN films were greatly improved by RTA treatment, while the residual stress and dislocations in these films were decreased.

Optical Transmission of p-Type a-Si:H Thin Film Deposited by PECVD on ITO-Coated Glass

2019 ◽  
Vol 966 ◽  
pp. 72-76
Author(s):  
Soni Prayogi ◽  
Malik Anjelh Baqiya ◽  
Yoyok Cahyono ◽  
Darminto
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Transmission Spectrum ◽  
Chemical Vapor ◽  
Type A ◽  
Deposition Process ◽  
Atomic Force ◽  
Frequency Plasma ◽  
Large Period ◽  
P Type

A p-type thin film of hydrogenated amporphous silicon (a-Si:H) has successfully been fabricated by radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD) technique. Substrate used in the deposition process is indium tin oxide (ITO) layer coated having size of 10 x10 cm2 and being cleaned with 97% alcohol using ultrasonic bath. According to Atomic Force Microscope (AFM) observation, the layer thickness of p-type a-Si: H film was 150 nm. The Transmission spectrum at room temperature obtained from UV-Vis measurement demonstrates a large period modulation, which is due to the interference within the film. At wavelength longer than 1000 nm (or energy <1 eV), the interference modulation in the transmission spectrum of the film is seen to broaden. It is shown in a zoomed - scale around the related band gap area that one may find an exciton structure.

PRIMARY AND SECONDARY PHOTOCURRENTS IN n-TYPE AND p-TYPE a-Si:H FILMS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-567-C4-570 ◽  
Author(s):  
H. M. Welsch ◽  
W. Fuhs ◽  
K. H. Greeb ◽  
H. Mell
Keyword(s):  
Type A ◽  
P Type

Kepuasan Masyarakat Terhadap Pelayanan Kelurahan Setelah Pemekaran Di Tangerang Selatan

Liquidity ◽  
2018 ◽  
Vol 2 (2) ◽  
pp. 151-159
Author(s):  
Pitri Yandri
Keyword(s):  
Public Perception ◽  
Service Personnel ◽  
Urban Services ◽  
Hospitality Workers ◽  
Care Workers ◽  
Before And After ◽  
Cartesian Diagram ◽  
Better Than

The purpose of this study is (1) to analyze public perception on urban services before and after the expansion of the region, (2) analyze the level of people's satisfaction with urban services, and (3) analyze the determinants of the variables that determine what level of people's satisfaction urban services. This study concluded that first, after the expansion, the quality of urban services in South Tangerang City is better than before. Secondly, however, public satisfaction with the services only reached 48.53% (poor scale). Third, by using a Cartesian Diagram, the second priority that must be addressed are: (1) clarity of service personnel, (2) the discipline of service personnel, (3) responsibility for care workers; (4) the speed of service, (5) the ability of officers services, (6) obtain justice services, and (7) the courtesy and hospitality workers.

Implementasi Voip Server Berbasis IPV6 Dengan Raspberry PI

2019 ◽  
Vol 9 (01) ◽  
pp. 47-54
Author(s):  
Rabbai San Arif ◽  
Yuli Fitrisia ◽  
Agus Urip Ari Wibowo
Keyword(s):  
Internet Protocol ◽  
Wireless Transmission ◽  
Raspberry Pi ◽  
Test Results ◽  
Average Delay ◽  
Ipv6 Network ◽  
Ip Network ◽  
Selection Of ◽  
Better Than

Voice over Internet Protocol (VoIP) is a telecommunications technology that is able to pass the communication service in Internet Protocol networks so as to allow communicating between users in an IP network. However VoIP technology still has weakness in the Quality of Service (QoS). VOPI weaknesses is affected by the selection of the physical servers used. In this research, VoIP is configured on Linux operating system with Asterisk as VoIP application server and integrated on a Raspberry Pi by using wired and wireless network as the transmission medium. Because of depletion of IPv4 capacity that can be used on the network, it needs to be applied to VoIP system using the IPv6 network protocol with supports devices. The test results by using a wired transmission medium that has obtained are the average delay is 117.851 ms, jitter is 5.796 ms, packet loss is 0.38%, throughput is 962.861 kbps, 8.33% of CPU usage and 59.33% of memory usage. The analysis shows that the wired transmission media is better than the wireless transmission media and wireless-wired.

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