Controtle Substitutional Doping of Cdte Thin Films and Cd 1-xMn xTe-CdTe Superlattices

1986 ◽  
Vol 90 ◽  
Author(s):  
R. N. Bicknell ◽  
N. C. Giles ◽  
J. F. Schetzina
Keyword(s):  
Electrical Transport ◽  
Molecular Beam ◽  
Deposition Process ◽  
Film Deposition ◽  
New Technique ◽  
Electrical Transport Properties ◽  
Substitutional Doping ◽  
A New Technique ◽  
P Type ◽  
First Time

ABSTRACTWe report the successful substitutional doping of CdTe epilayers grown by a new technique: photoassisted molecular beam epitaxy, in which the substrate is illuminated during the film deposition process. This new technique was found to produce dramatic changes in the electrical transport properties of the epilayers. In particular, highly conducting n-type and p-type CdTe films have been grown using In and Sb as n-type and p-type dopants,respectively. Photoassisted MBE has also recently been employed to produce for the first time highly conducting CdMnTe epilayers and Cd 1-xMnxTe-CdTe superlattices.

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

Electrical transport properties in nitrogen-doped p-type ZnO thin film

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Zno Thin Film ◽  
Electrical Transport Properties ◽  
Nitrogen Doped ◽  
P Type

Pressure-Controlled Palpation: A New Technique Which Increases the Reliability of Manual Palpation

Cephalalgia ◽  
1995 ◽  
Vol 15 (3) ◽  
pp. 205-210 ◽  
Author(s):  
L Bendtsen ◽  
R Jensen ◽  
NK Jensen ◽  
J Olesen
Keyword(s):  
Pain Intensity ◽  
Myofascial Pain ◽  
Tension Type Headache ◽  
New Technique ◽  
Future Research ◽  
Manual Palpation ◽  
A New Technique ◽  
Type Headache ◽  
First Time ◽  
Pressure Controlled

The objective of the present study was to investigate whether the reliability of tenderness evaluation can be increased by using a new technique called “pressure-controlled palpation” (pcp). The technique has been made possible by a newly invented piece of equipment called a palpometer, with which a pressure-sensitive plastic film attached to the index finger records the pressure exerted. In 15 patients with chronic tension-type headache and in 15 healthy volunteers, 2 investigators studied myofascial tenderness using conventional palpation and pressure-controlled palpation. Tenderness was scored on a 4–point scale in each of the examined pericranial regions. The sum of tenderness scores recorded by two observers using conventional palpation differed significantly ( p = 0.0003), while results did not differ between observers using pressure-controlled palpation ( p = 0.89). During palpation with seven different pressure intensities a positive and linear relation between pressure and pain intensity was found ( p = 0.00006). Pain intensity reported by the subjects correlated highly with tenderness scored by the observer (rs = 0.95, p < 0.0001). These results demonstrate for the first time that tenderness scores can be compared between observers if palpation pressure is controlled. Pressure-controlled palpation represents a major improvement on current palpation techniques and should be standard in future research on myofascial pain disorders.

Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP

2001 ◽  
Vol 690 ◽  
Author(s):  
Mark E. Overberg ◽  
Gerald T. Thaler ◽  
Rachel M. Frazier ◽  
Brent P. Gila ◽  
Cammy R. Abernathy ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hysteretic Behavior ◽  
Ferromagnetic Semiconductors ◽  
Temperature Dependent ◽  
Paramagnetic Behavior ◽  
Gas Source ◽  
P Type ◽  
First Time ◽  
Temperature Dependent Magnetization

ABSTRACTEpitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

Investigation on the electrical transport properties of highly (00l)-textured Sb2Te3 films deposited by molecular beam epitaxy

2014 ◽  
Vol 115 (2) ◽  
pp. 024307 ◽  
Author(s):  
Xiangpeng Zhang ◽  
Zhigang Zeng ◽  
Chao Shen ◽  
Ziqiang Zhang ◽  
Zhichong Wang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Transport Properties ◽  
Electrical Transport ◽  
Molecular Beam ◽  
Electrical Transport Properties

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 249-252 ◽  
Author(s):  
Sylvie Contreras ◽  
Leszek Konczewicz ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Hervé Peyre ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Hole Concentration ◽  
Electrical Transport Properties ◽  
Capacitance Voltage ◽  
Experimental Values ◽  
Cv Measurements ◽  
P Type ◽  
Secondary Ion

In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.

Electrical Transport Properties of the Pentatelluride Materials Hfte5 and Zrte5

1997 ◽  
Vol 478 ◽  
Author(s):  
T. M. Tritt ◽  
M. L. Wilson ◽  
R. L. Littleton ◽  
C. Feger ◽  
J. Kolis ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Electrical Transport ◽  
Entire Range ◽  
Room Temperature ◽  
Polycrystalline Material ◽  
Polycrystalline Materials ◽  
Electrical Transport Properties ◽  
Low Dimensional ◽  
P Type

AbstractWe have measured the resistivity and thermopower of single crystals as well as polycrystalline pressed powders of the low-dimensional pentatelluride materials: HfTe5 and ZrTe5. We have performed these measurements as a function of temperature between 5K and 320K. In the single crystals there is a peak in the resistivity for both materials at a peak temperature, Tp where Tp ≈ 80K for HfTe5 and Tp ≈ 145K for ZrTe5. Both materials exhibit a large p-type thermopower around room temperature which undergoes a change to n-type below the peak. This data is similar to behavior observed previously in these materials. We have also synthesized pressed powders of polycrystalline pentatelluride materials, HfTe5 and ZrTe5. We have measured the resistivity and thermopower of these polycrystalline materials as a function of temperature between 5K and 320K. For the polycrystalline material, the room temperature thermopower for each of these materials is relatively high, +95 μV/K and +65 μV/K for HfTe5 and ZrTe5 respectively. These values compare closely to thermopower values for single crystals of these materials. At 77 K, the thermopower is +55 μV/K for HfTe5 and +35 μV/K for ZrTe5. In fact, the thermopower for the polycrystals decreases monotonically with temperature to T ≈ 5K, thus exhibiting p-type behavior over the entire range of temperature. As expected, the resistivity for the polycrystals is higher than the single crystal material, with values of 430 mΩ-cm and 24 mΩ-cm for Hfre5 and ZrTe5 respectively, compared to single crystal values of 0.35 mΩ-cm (HfTe5) and 1.0 mΩ-cm (ZrTe5). We have found that the peak in the resistivity evident in both single crystal materials is absent in these polycrystalline materials. We will discuss these materials in relation to their potential as candidates for thermoelectric applications.

Electrical transport properties of Ag-doped p-type PbTe epitaxial thin films

1981 ◽  
Vol 68 (1) ◽  
pp. 227-232 ◽  
Author(s):  
A. L. Dawar ◽  
S. K. Paradkar ◽  
P. Kumar ◽  
O. P. Taneja ◽  
P. C. Mathur
Keyword(s):  
Thin Films ◽  
Transport Properties ◽  
Electrical Transport ◽  
Epitaxial Thin Films ◽  
Electrical Transport Properties ◽  
P Type
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