Deposition of epitaxial transition metal carbide films and superlattices by simultaneous direct current metal magnetron sputtering and C60 evaporation

2001 ◽  
Vol 16 (3) ◽  
pp. 633-643 ◽  
Author(s):  
H. Högberg ◽  
J. Birch ◽  
M. P. Johansson ◽  
L. Hultman ◽  
U. Jansson
Keyword(s):  
Epitaxial Growth ◽  
Deposition Process ◽  
Growth Conditions ◽  
Growth Behavior ◽  
Transition Metal Carbide ◽  
Structural Quality ◽  
Metal Carbide ◽  
General Observation ◽  
Better Than

Thin epitaxial TiC and VC films and superlattices have been deposited on MgO(001) by simultaneous sputtering of the metals and evaporation of C60. It was found that epitaxial growth conditions for TiC could be maintained down to a temperature of 100 °C, while the epitaxial growth of VC required 200 °C. Epitaxial VC films were completely relaxed at all growth temperatures, while a change from a relaxed to a strained growth behavior was observed for TiC films. The structural quality of the TiC films was better than for the VC films. A general observation was that a plasma-assisted deposition process yields films with a higher quality and allows epitaxial growth at lower temperatures than for a pure coevaporation process.

scholarly journals Epitaxial growth by monolayer restricted galvanic displacement

2012 ◽  
Vol 77 (9) ◽  
pp. 1239-1242
Author(s):  
Rastko Vasilic
Keyword(s):  
Epitaxial Growth ◽  
Deposition Process ◽  
Scanning Tunneling ◽  
Deposit Morphology ◽  
Galvanic Displacement ◽  
Tunneling Microscopy ◽  
Efficient Tool ◽  
Dimensional Growth ◽  
Key Parameter

The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD) was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV) and scanning tunneling microscopy (STM) are employed to carry out and monitor a ?quasi-perfect?, two-dimensional growth of Ag on Au(111), Cu on Ag(111), and Cu on Au(111) by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

Magnetic Anisotropy of Strained La0.7Sr0.3MnO3 Thin Films Studied by MOKE

2001 ◽  
Vol 690 ◽  
Author(s):  
M. Koubaa ◽  
A.M. Haghiri-Gosnet ◽  
P. Lecoeur ◽  
W. Prellier ◽  
B. Mercey
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Scaling Law ◽  
Hysteresis Loops ◽  
Magnetic Behavior ◽  
Growth Conditions ◽  
Structural Quality ◽  
Lattice Strains ◽  
Stress States

ABSTRACTThe effects of the growth conditions and the lattice strains of pulsed laser deposited (PLD) La0.7Sr0.3MnO3 (LSMO) thin films upon the magnetic behavior have been studied using magneto-optical Kerr effect (MOKE) at room temperature. First, the structural quality of the films was investigated by XRD and the surface morphology was studied using AFM. It is shown that both surface morphology and crystallinity are optimized when the target-to-substrate distance and the oxygen pressure are chosen in agreement with a PD3 scaling law. Secondly, hysteresis loops have been recorded along the [100], [110] and [001] directions and the easy directions of magnetization have been determined for both stress states, i.e. tension on SrTiO3 and compression on LaAlO3. In tensile films, the whole plane is found to be easy, whereas, in compressive films, the easy axis should be an intermediate direction between the film's plane and its normal. Moreover, tensile films deposited under optimized growth conditions exhibit the largest anisotropy coefficient (K1eff = -6.9×105 erg/cm3).

scholarly journals Improvement of Crystalline Quality of Group III Nitrides on Sapphire Using Low Temperature Interlayers

1999 ◽  
Vol 4 (S1) ◽  
pp. 870-877 ◽  
Author(s):  
H. Amano ◽  
M. Iwaya ◽  
N. Hayashi ◽  
T. Kashima ◽  
M. Katsuragawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Group Iii Nitrides ◽  
Crystalline Quality ◽  
Structural Quality ◽  
Group Iii

In organometallic vapor phase epitaxial growth of group III nitrides on sapphire, insertion of a low temperature interlayer is found to improve crystalline quality of AlxGa1−xN layer with x from 0 to 1. Here the effects of the low temperature deposited GaN or AlN interlayers on the structural quality of group III nitrides is discussed.

Influence of growth conditions on the structural quality of Cu(InGa)Se2 and CuInSe2 thin films

2004 ◽  
Vol 451-452 ◽  
pp. 133-136 ◽  
Author(s):  
M.V Yakushev ◽  
A.V Mudryi ◽  
V.F Gremenok ◽  
E.P Zaretskaya ◽  
V.B Zalesski ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Conditions ◽  
Structural Quality

Progress on Preferential Etching and Phosphorus Doping of Single Crystal Diamond

2014 ◽  
Vol 1634 ◽  
Author(s):  
Timothy A. Grotjohn ◽  
Dzung T. Tran ◽  
M. Kagan Yaran ◽  
Thomas Schuelke
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Growth Conditions ◽  
Room Temperature Resistivity ◽  
Single Crystal Diamond

ABSTRACTPhosphorus is incorporated into single crystal diamond during epitaxial growth at higher concentrations on the (111) crystallographic surface than on the (001) crystallographic surface. To form n+-type regions in diamond for semiconductor devices it is beneficial to deposit on the (111) surface. However, diamond deposition is faster and of higher quality on the (001) surface. A preferential etch method is described that forms inverted pyramids on the (001) surface of a substrate diamond crystal, which opens (111) faces for improved phosphorus incorporation. The preferential etching occurs on the surface in regions where a nickel film is deposited. The etching is performed in a microwave generated hydrogen plasma operating at 160 Torr with the substrate temperature in the range of 800-950 °C. The epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm-3 is performed using a microwave plasma-assisted chemical vapor deposition process. Successful growth conditions were achieved with a feedgas mixture of 0.25% methane, 500 ppm phosphine and hydrogen at a pressure of 160 Torr and a substrate temperature of 950-1000°C. The room temperature resistivity of the phosphorus-doped diamond is 120-150 Ω-cm and the activation energy is 0.027 eV.

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

2011 ◽  
Vol 679-680 ◽  
pp. 801-803
Author(s):  
Ji Sheng Han ◽  
Sima Dimitrjiev ◽  
Li Wang ◽  
Alan Iacopi ◽  
Qu Shuang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Light Emission ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Structural Quality ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Si Substrates

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

Film Deposition Process in Pulse Discharge CVD

1991 ◽  
Vol 219 ◽  
Author(s):  
T. Yoshida ◽  
H. Fujisawa ◽  
T. Hokaya ◽  
Y. Ichikawa ◽  
H. Sakai
Keyword(s):  
Pulse Discharge ◽  
Type A ◽  
Deposition Process ◽  
Film Deposition ◽  
Plasma Parameters ◽  
Film Properties ◽  
Si Solar Cells ◽  
P Type ◽  
Better Than

ABSTRACTTo understand the deposition process of pulse discharge (PD) CVD, we studied spatial distribution and decay of plasma parameters and those of SiH LIF signals. In addition, we studied film properties of a-SiC:H and a-SiGe:H deposited by the PD-CVD. It was found that the quality of p-type a-SiC:H films deposited by the PD-CVD from SiH4+CH4+B3 was better than those of conventional p-type a-SiC:H films. The p-type a-SiC:H films were applied to the p-layer of p-i-n a-Si solar cells, and a conversion efficiency of 12. 3% was obtained for a 1cm2.

The use of NiMnSb Heusler alloy in MBE Grown Tunnel Junction

2001 ◽  
Vol 690 ◽  
Author(s):  
Pascal Turban ◽  
Stéphane Andrieu ◽  
Alberto Tagliaferri ◽  
Céline De Nadai ◽  
Nike Brookes
Keyword(s):  
Electronic Properties ◽  
Growth Process ◽  
Room Temperature ◽  
Molecular Beam ◽  
Magnetic Circular Dichroism ◽  
Growth Conditions ◽  
Photoemission Spectroscopy ◽  
Structural Quality ◽  
X Ray

ABSTRACTIn this paper, the structural, magnetic and electronic properties of single-crystalline NiMnSb thin films grown by molecular beam epitaxy are presented. The growth process and surface morphology were studied by RHEED and STM. The structural quality of the films was investigated by EXAFS and HRTEM. For the optimized growth conditions, the expected NiMnSb C1b structure was obtained. Moreover, the most stable surface was found to be 4x1 reconstructed. The magnetic and electronic properties were studied by X-ray magnetic circular dichroïsm and spin-resolved x-ray photoemission spectroscopy experiments. The magnetization was observed to be essentially due to Mn, in agreement with theory. The surface was not found to be fully polarized but a polarization near 50% at room temperature was observed. Finally, the preparation of fully epitaxial NiMnSb/MgO/NiMnSb(001) trilayers is presented.

Performance Modification of SiC MEMS

2009 ◽  
Vol 615-617 ◽  
pp. 621-624 ◽  
Author(s):  
Florentina Niebelschütz ◽  
Klemens Brueckner ◽  
Volker Cimalla ◽  
Matthias A. Hein ◽  
Jörg Pezoldt
Keyword(s):  
Residual Stress ◽  
Resonant Frequency ◽  
Epitaxial Growth ◽  
Quality Factor ◽  
Growth Conditions ◽  
Mems Devices ◽  
Quality Factors ◽  
Resonant Frequencies ◽  
Raman Analysis

The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the SiC-layers grown on Si(111) by manipulating the nucleation conditions and growth conditions with Ge deposition prior to the carbonization and epitaxial growth. Previous Raman analysis of the SiC-layers and measured resonant frequencies and quality factors of the processed MEMS show a dependence on the Ge amount at the interface of the Si/SiC heterostructure, which allows to adjust the MEMS properties to the requirements needed for certain applications.

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