Electronic properties of strained bonds in amorphous silicon: The origin of the band-tail states?

1984 ◽  
Author(s):  
L. Schweitzer ◽  
M. Scheffler
Keyword(s):  
Amorphous Silicon ◽  
Electronic Properties ◽  
Band Tail ◽  
Strained Bonds

Hydrogenated Amorphous Silicon Nitride: Structural and Electronic Properties

1998 ◽  
Vol 538 ◽  
Author(s):  
J. F. Justo ◽  
F. De Brito Mota ◽  
A. Fazziom
Keyword(s):  
Silicon Nitride ◽  
Ab Initio ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Interatomic Potential ◽  
Hydrogen Atoms ◽  
Hydrogen Incorporation ◽  
Amorphous Silicon Nitride ◽  
Structural And Electronic Properties ◽  
Hydrogenated Amorphous

AbstractWe combined empirical and ab initio methods to study structural and electronic properties of amorphous silicon nitride. For such study, we developed an interatomic potential to describe the interactions between silicon, nitrogen, and hydrogen atoms. Using this potential, we performed Monte Carlo simulations in a simulated annealing scheme to study structural properties of amorphous silicon nitride. Then this potential was used to generate relevant structures of a-SiNx:Hy which were input configurations to ab initio calculations. We investigated the electronic and structural role played by hydrogen incorporation in amorphous silicon nitride.

Temperature Dependence of the Decay of Optically Excited Charge Carriers in Amorphous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
J. Whitaker ◽  
P. C. Taylor
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
State Density ◽  
Charge Carriers ◽  
Band Tail ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Long Time ◽  
Tail Structure ◽  
Kinetics Of

AbstractWe report the temperature dependence of the growth and decay of the optically induced electron spin resonance (LESR) on short and long time scales (10-3 s < t < 2500 s). This range of times spans the region between previously published photoluminescence and the LESR data. In addition, we examine the steady-state density of optically excited charge carriers as a function of temperature. These measurements lead to a better understanding of the band tail structure of amorphous silicon as well as the kinetics of the excitation and recombination processes.

Defect Structure and Network Disorder in Boron Doped Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
M. B. Schubert ◽  
G. Schumm ◽  
E. Lotter ◽  
K. Eberhardt ◽  
G. H. Bauer
Keyword(s):  
Hydrogen Bonding ◽  
Fermi Level ◽  
Amorphous Silicon ◽  
Defect Structure ◽  
Boron Concentration ◽  
Hole Transport ◽  
Local Defect ◽  
Band Tail ◽  
Boron Doped ◽  
Transport Path

ABSTRACTA series of boron doped a-Si:H films have been characterized by PDS, FTIR, Raman, and SIMS in order to evaluate the effects of boron incorporation on structural properties and hydrogen bonding. Doping by B2H6 or B(CH3)3 does not significantly enhance the overall disorder of the silicon network showing up in the TO-like Raman halfwidth whereas remarkable changes in local, defect related structures are evident from PDS. An analysis of the data suggests two bands of defects in the pseudogap at low boron concentration and only one band for higher concentration. To account for Fermi level positions, shifts of the hole transport path well into the valence band tail upon doping must be invoked.

Comments on Electron and Hole Transport in the Band Tail States of Amorphous Silicon at Low Temperatures

1989 ◽  
Vol 149 ◽  
Author(s):  
M. Silver ◽  
W. E. Spear
Keyword(s):  
Amorphous Silicon ◽  
Drift Mobility ◽  
Hole Transport ◽  
Experimental Results ◽  
Exponential Tail ◽  
Band Tail ◽  
State Distribution ◽  
Temperature Drift ◽  
Model Calculations ◽  
Tail State

ABSTRACTRecent experimental results on the low temperature drift mobility in amorphous silicon are examined on the basis of the approach to hopping transport developed by Silver and Bässler. It is shown on general grounds that the main features of the experimental results cannot be explained by a purely exponential tail state distribution, but are consistent with the distribution used by Spear and Cloude (1988) in model calculations.

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